SPB11N60C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability • Improved transconductance Type Package Ordering Code Marking SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current ID A TC = 25 °C 11 TC = 100 °C 7 Pulsed drain current, tp limited by Tjmax ID puls 33 A Avalanche energy, single pulse EAS 340 EAR 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 125 Operating and storage temperature Tj , Tstg Reverse diode dv/dt 7) dv/dt mJ ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Rev. 2.6 Page 1 W -55...+150 15 °C V/ns 2007-12-14 SPB11N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. - - 1 - - - - - - @ min. footprint - - 62 @ 6 cm 2 cooling area 3) - 35 - - - 260 Thermal resistance, junction - case RthJC Thermal resistance, junction - ambient, leaded RthJA SMD version, device on PCB: K/W 62 RthJA Soldering temperature, reflow soldering, MSL1 Tsold °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=11A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=500µA, VGS =VDS Zero gate voltage drain current I DSS VDS=600V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.6 RG µA Tj=25°C - 0.1 1 Tj=150°C - - 100 VGS=30V, V DS=0V - - 100 Ω VGS=10V, ID=7A Tj=25°C - 0.34 0.38 Tj=150°C - 0.92 - f=1MHz, open drain - 0.86 - Page 2 nA 2007-12-14 SPB11N60C3 Electrical Characteristics Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*R DS(on)max, Values Unit min. typ. max. - 8.3 - S pF ID=7A Input capacitance Ciss VGS=0V, VDS=25V, - 1200 - Output capacitance Coss f=1MHz - 390 - Reverse transfer capacitance Crss - 30 - - 45 - - 85 - Effective output capacitance,5) Co(er) VGS=0V, energy related VDS=0V to 480V Effective output capacitance,6) Co(tr) time related Turn-on delay time td(on) VDD=380V, VGS=0/10V, - 10 - Rise time tr ID=11A, - 5 - Turn-off delay time td(off) RG =6.8Ω - 44 70 Fall time tf - 5 9 - 5.5 - - 22 - - 45 60 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480V, ID=11A VDD=480V, ID=11A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=11A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.6 Page 3 2007-12-14 SPB11N60C3 Electrical Characteristics Parameter Symbol Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 11 - - 33 TC=25°C A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time t rr VR =480V, IF =IS , - 400 600 ns Reverse recovery charge Q rr diF/dt=100A/µs - 6 - µC Peak reverse recovery current I rrm - 41 - A Peak rate of fall of reverse dirr /dt - 1200 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Value Symbol Unit Symbol SPB Rth1 0.015 Rth2 Value Unit SPB K/W Cth1 0.0001878 0.03 Cth2 0.0007106 Rth3 0.056 Cth3 0.000988 Rth4 0.197 Cth4 0.002791 Rth5 0.216 Cth5 0.007285 Rth6 0.083 Cth6 0.063 Tj R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.6 Page 4 2007-12-14 SPB11N60C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 140 SPP11N60C3 35 W W 120 110 25 Ptot Ptot 100 90 20 80 70 15 60 50 10 40 30 5 20 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS) parameter : D = 0 , TC=25°C parameter: D = 0, TC = 25°C 10 2 °C 160 TC 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 2.6 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 10 V VDS 10 -2 0 10 3 Page 5 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2007-12-14 3 SPB11N60C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (tp) ZthJC = f (tp) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W 10 0 ZthJC ZthJC 10 0 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj =25°C ID = f (VDS); Tj =150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 40 22 20V 10V 8V A 20V 8V 7V 7.5V A 32 18 7V 6V 16 6,5V 24 ID 28 ID 1 s 10 14 5.5V 12 20 6V 10 16 5V 8 5,5V 12 8 4 0 0 Rev. 2.6 3 6 9 12 15 18 21 6 5V 4 4,5V 2 0 0 27 V VDS 4.5V 4V 5 10 15 25 V VDS Page 6 2007-12-14 SPB11N60C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 7 A, VGS = 10 V 2.1 2 Ω Ω 4.5V 4V 5V 1.8 6V 5.5V 1.6 RDS(on) RDS(on) SPP11N60C3 1.4 1.6 1.4 1.2 1.2 1 0.8 1 0.6 0.8 98% 6.5V 8V 20V 0.6 0.4 0 0.4 2 4 6 8 10 12 typ 0.2 14 16 A ID 0 -60 20 -20 20 60 100 12 Typ. gate charge ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 11 A pulsed 40 16 A 180 Tj 11 Typ. transfer characteristics parameter: tp = 10 µs °C SPP11N60C3 V 25°C 32 12 24 VGS ID 28 150°C 20 0,2 VDS max 10 0,8 VDS max 8 16 6 12 4 8 2 4 0 0 Rev. 2.6 2 4 6 8 10 12 0 0 V 15 VGS 10 20 30 40 50 nC 70 QGate Page 7 2007-12-14 SPB11N60C3 13 Forward characteristics of body diode 14 Typ. switching time IF = f (VSD) t = f (ID), inductive load, Tj =125°C parameter: Tj , tp = 10 µs par.: VDS =380V, VGS=0/+13V, RG=6.8Ω 10 2 SPP11N60C3 70 ns A 60 td(off) 55 50 10 1 t IF 45 40 35 30 25 10 0 Tj = 25 °C typ 20 Tj = 150 °C typ 15 Tj = 25 °C (98%) 10 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2.4 V 2 3 tf td(on) 5 tr 0 0 2 4 6 8 12 A ID VSD 15 Typ. switching time 16 Typ. drain current slope t = f (RG ), inductive load, Tj =125°C di/dt = f(RG ), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, ID=11 A par.: VDS =380V, VGS=0/+13V, ID=11A 350 3000 ns A/µs t di/dt 250 2000 200 td(off) td(on) tr tf 150 1500 1000 100 di/dt(off) 500 50 0 0 10 20 30 40 50 0 0 70 Ω RG Rev. 2.6 di/dt(on) 20 40 60 80 120 Ω RG Page 8 2007-12-14 SPB11N60C3 17 Typ. drain source voltage slope 18 Typ. switching losses dv/dt = f(RG), inductive load, Tj = 125°C E = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS=0/+13V, ID=11A par.: VDS =380V, VGS=0/+13V, RG=6.8Ω 140 0.04 V/ns mWs dv/dt(off) 120 0.03 100 90 E dv/dt 110 *) Eon includes SPD06S60 diode commutation losses 0.025 80 0.02 70 60 0.015 50 40 Eon* 0.01 dv/dt(on) 30 0.005 Eoff 20 10 0 10 20 30 40 50 0 0 70 Ω 2 4 6 8 ID 19 Typ. switching losses 20 Avalanche SOA E = f(RG), inductive load, T j=125°C IAR = f (tAR) par.: VDS =380V, VGS=0/+13V, ID=11A par.: Tj ≤ 150 °C 0.24 12 A RG 11 *) Eon includes SPD06S60 diode commutation losses A mWs 9 8 0.16 E IAR Eoff 7 6 0.12 5 T j(START)=25°C 4 0.08 3 Eon* T j(START)=125°C 2 0.04 1 0 0 10 20 30 40 50 0 -3 10 70 Ω RG Rev. 2.6 Page 9 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR 2007-12-14 SPB11N60C3 21 Avalanche energy 22 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 350 720 SPP11N60C3 V V(BR)DSS mJ EAS 250 200 680 660 640 620 150 600 100 580 50 0 20 560 40 60 80 100 120 °C 540 -60 160 -20 20 60 100 °C Tj 180 Tj 23 Avalanche power losses 24 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: EAR =0.6mJ parameter: VGS =0V, f=1 MHz 10 4 300 pF W Ciss 200 C P AR 10 3 10 2 150 Coss 100 10 1 Crss 10 0 0 100 50 0 4 10 10 5 10 Hz 6 300 400 V 600 VDS f Rev. 2.6 200 Page 10 2007-12-14 SPB11N60C3 25 Typ. Coss stored energy Eoss=f(VDS) 7.5 µJ 6 Eoss 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Rev. 2.6 Page 11 2007-12-14 SPB11N60C3 PG-TO263 Rev. 2.6 Page 12 2007-12-14 SPB11N60C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 Page 13 2007-12-14