IRF JANTXV2N7236

PD - 90495G
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
IRFM9140
JANTX2N7236
JANTXV2N7236
JANS2N7236
REF:MIL-PRF-19500/595
100V, P-CHANNEL
®
Part Number
RDS(on)
ID
IRFM9140
0.20Ω
-18A
HEXFET MOSFET TECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-18
-11
-72
125
1.0
±20
500
-18
12.5
-5.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
g
For footnotes refer to the last page
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1
09/22/03
IRFM9140
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
—
—
V
—
-0.087
—
V/°C
—
—
-2.0
6.2
—
—
—
—
—
—
—
—
0.20
0.22
-4.0
—
-25
-250
Ω
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
60
13
35.2
35
85
85
65
—
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1400
600
200
—
—
V
S( )
Ω
BVDSS
µA
nA
nC
ns
nH
pF
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -11A➃
VGS = -10V, ID = -18A ➃
VDS = VGS, ID = -250µA
VDS > -15V, IDS = -11A➃
VDS= -80V, VGS= 0V
VDS = -80V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS =20V
VGS = -10V, ID= -18A
VDS = -50V
VDD = -50V, ID = -11A
RG = 9.1Ω, VGS = -10V
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-18
-72
-5.0
280
3.6
Test Conditions
A
V
nS
µc
Tj = 25°C, IS = -18A, VGS = 0V ➃
Tj = 25°C, IF = -18A, di/dt ≤-100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction to Ambient
Min Typ Max
—
—
—
—
0.21
—
1.0
—
48
Units
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRFM9140
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFM9140
13a & b
4
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFM9140
V DS
VGS
RD
D.U.T.
RG
-
+
V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
td(on)
tr
t d(off)
tf
VGS
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFM9140
L
VDS
D .U .T
RG
V0GS
-2
V
VD D
A
IA S
D R IV E R
0 .0 1 Ω
tp
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-10V
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFM9140
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
➂ ISD ≤ -18A, di/dt ≤ −100A/µs,
maximum junction temperature.
➁ VDD =-25V, starting TJ = 25°C, L = 3.1mH
Peak IL = -18A, VGS = -10V
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD≤ -100V, TJ ≤ 150°C
Case Outline and Dimensions — TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
2
C
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
B
A
22.73 [.895]
21.21 [.835]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
2
B
R 1.52 [.060]
3
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
3.81 [.150]
3X
1.14 [.045]
0.89 [.035]
0.36 [.014]
2X
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
3
17.40 [.685]
16.89 [.665]
3.81 [.150]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.81 [.150]
2X
4.06 [.160]
3.56 [.140]
3X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
B A
NOTE S:
1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES ].
3. CONT ROLLING DIMENSION: INCH.
4. CONFORMS TO JEDEC OUT LINE T O-254AA.
PIN ASSIGNMENT S
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/03
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