PD - 94676 HEXFET® POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA) IRL7YS1404CM 40V, N-CHANNEL Product Summary Part Number IRL7YS1404CM RDS(on) 0.007Ω BVDSS 40V ID 20A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Low Ohmic TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 20* 20* 80 100 0.8 ±20 785 20 10 1.8 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical) C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 06/02/03 IRL7YS1404CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss Rg Typ Max Units Test Conditions 40 — — V VGS = 0V, ID = 250µA — 0.04 — V/°C Reference to 25°C, ID = 1.0mA — — 1.0 85 — — — — — — — — Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 5.74 100 -100 115 35 45 37 180 85 40 — Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — 6470 1600 165 2.86 — — — — Gate Resistance 0.007 Ω 0.0085 3.0 V — S( ) 20 µA 250 Ω BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current nA nC ns nH pF Ω VGS = 10V, ID = 20A ➃ VGS = 4.5V, ID = 20A VDS = VGS, ID = 250µA VDS = 10V, IDS = 20A ➃ VDS = 40V ,VGS=0V VDS = 32V, VGS = 0V, TJ=125°C VGS = 20V VGS = -20V VGS =5.0V, ID = 20A VDS = 32V VDD = 20V, ID = 20A, VGS = 5.0V, RG = 2.5Ω Measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz f = 0.78MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units — — — — — — — — — — 20* 80 1.3 90 200 Test Conditions A V ns nC Tj = 25°C, IS = 20A, VGS = 0V ➃ Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.25 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com IRL7YS1404CM 1000 VGS 15V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 1000 VGS 15V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 100 10 3.0V 60µs PULSE WIDTH Tj = 25°C TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 3.0V 10 60µs PULSE WIDTH Tj = 150°C 1 1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current ( Α) T J = 25°C T J = 150°C 10 VDS = 20V 15 60µs PULSE WIDTH 3 3.5 4 4.5 5 5.5 6 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 1000 1 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 100 1 ID = 20A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL7YS1404CM VGS = Ciss = Crss = Coss = C, Capacitance (pF) 8000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd Ciss 6000 Coss 4000 2000 20 VGS , Gate-to-Source Voltage (V) 10000 ID = 20A VDS = 32V VDS = 20V VDS = 8V 16 12 8 4 Crss 0 1 10 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 50 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ID, Drain-to-Source Current (A) ISD , Reverse Drain Current ( Α) 200 250 1000 T J = 150°C T J = 25°C 1 VGS = 0V 0.1 0.2 0.6 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 150 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 100 QG , Total Gate Charge (nC) 100µs 1 2.2 1ms 10 Tc = 25°C Tj = 150°C Single Pulse 0 10ms 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL7YS1404CM 100 LIMITED BY PACKAGE VGS 80 I D , Drain Current (A) RD V DS D.U.T. RG + -V DD VGS 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL7YS1404CM 1 5V EAS , Single Pulse Avalanche Energy (mJ) 2500 ID 9.0A 12.6A BOTTOM 20A TOP 2000 D R IV E R L VD S 1500 D .U .T. RG + V - DD IA S VGS 20V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S 1000 500 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ 12V .2µF .3µF QG 10V D.U.T. QGS + V - DS QGD VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRL7YS1404CM Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 20A, di/dt ≤ 175A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 3.9mH Peak IAS = 20A, VGS =10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 40V, TJ ≤ 150°C Case Outline and Dimensions — Low-ohmic TO-257AA 0.13 [.005] A 3.81 [.150] 3X Ø 3.56 [.140] 10.66 [.420] 10.42 [.410] 16.89 [.665] 16.39 [.645] 13.63 [.537] 13.39 [.527] 1 2 5.08 [.200] 4.83 [.190] 10.92 [.430] 10.42 [.410] 1.14 [.045] 0.89 [.035] B 3 0.71 [.028] MAX. C 15.88 [.625] 12.70 [.500] 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] Ø 0.50 [.020] C A 3.05 [.120] B NOTES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS TO JEDEC OUTLINE T O-257AA. P IN AS S IGNME NT S 1 = DRAIN 2 = S OURCE 3 = GAT E IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/03 www.irf.com 7