IRF IRF6156

PD - 94592A
IRF6156
Ultra Low RSS(on) per Footprint Area
l Low Thermal Resistance
l Bi-Directional N-Channel Switch
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
l ESD Protection Diode †
Description
l
FlipFET Power MOSFET
VSS
20V
RSS(on) max
IS
40m @VGS1,2 = 4.5V
±6.5
:
60m:@VGS1,2 = 2.5V
±5.2
True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques and a
unique packaging concept, extremely low on-resistance and the
highest power densities in the industry have been made available
for battery and load management applications. These benefits,
combined with the ruggedized device design that International
Rectifier is well known for, provide the designer with an
extremely efficient and reliable device.
The FlipFET™ package, is one-fifth the footprint of a comparable
TSSOP-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this
makes the FlipFET™ the best device for applications where
printed circuit board space is at a premium and in extremely thin
application environments such as battery packs, mobile phones
and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VSS
IS @ TA = 25°C
IS @ TA = 70°C
Source-to-Source Voltage
Continuous Current, VGS1 = VGS2 = 4.5V
ISM
Continuous Current, VGS1 = VGS2
Pulsed Current
PD @TA = 25°C
Power Dissipation
c
e
= 4.5V e
Max.
Units
20
V
±6.5
A
±5.2
33
PD @TA = 70°C
e
Power Dissipation e
1.6
VGS
Linear Derating Factor
Gate-to-Source Voltage
20
±12
mW/°C
V
TJ
Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
2.5
W
Thermal Resistance
Parameter
RθJA
Junction-to-Ambient
RθJ-PCB
Junction-to-PCB
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e
Typ.
Max.
Units
–––
50
°C/W
35
–––
1
09/25/03
IRF6156
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)SSS
Min. Typ. Max. Units
Source-to-Source Breakdown Voltage
20
–––
–––
∆V(BR)SSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
16
–––
Static Source-to-Source On-Resistance –––
27
40
RSS(on)
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
ISSS
IGSS
Zero Gate Voltage Source Current
V
Conditions
VGS=0V, IS=250µA,See Fig. 23a&b
mV/°C Reference to 25°C,IS=1mA,Fig.23a&b
mΩ VGS1,2 = 4.5V, IS = 6.5A Fig.11a&b
d
d
= 250µA d Fig. 10a&b
VGS1,2 = 2.5V, IS = 5.2A
–––
43
60
0.45
–––
1.2
V
VSS = VGS, IS
18
–––
–––
S
VSS = 10V, IS = 6.5A, See Fig. 4
–––
–––
1.0
µA
–––
–––
25
–––
50
–––
–––
100
–––
VSS = 20V, VGS = 0V,See Fig.23a&b
VSS = 16V, VGS = 0V, TJ = 125°C
nA
VSS = 4.5V, VGS = 0V, TJ = 25°C
VSS = 4.5V, VGS = 0V, TJ = 60°C
Gate-to-Source Forward Leakage
–––
8.0
20
µA
VGS = 12V, See Fig. 22
Gate-to-Source Reverse Leakage
–––
-8.0
-20
VGS = -12V
0.5
µA
VGS = 4.5V
Gate-to-Source Forward Leakage
––– 0.20
Gate-to-Source Reverse Leakage
––– -0.20 -0.5
Qg
Total Gate Charge
–––
12
18
Qgs
Gate-to-Source Charge
–––
1.6
2.4
QG1-S2
Miller Charge
–––
4.4
6.6
VGS = 5.0V, See Fig. 14a,b&c
td(on)
Turn-On Delay Time
–––
8.0
–––
VSS = 10V
VGS = -4.5V
IS = 6.5A
nC
VSS = 16V
tr
Rise Time
–––
13
–––
td(off)
Turn-Off Delay Time
–––
33
–––
RG = 3.0Ω
tf
Fall Time
–––
26
–––
VGS = 5.0V, See Fig. 21a,b&c
Ciss
Input Capacitance
–––
950
–––
VGS = 0V
Coss
Output Capacitance
–––
210
–––
Crss
Reverse Transfer Capacitance
–––
150
–––
Vssf
Source-to-Source Diode Forward
–––
–––
1.2
Voltage, One Device On
ns
IS = 1.0A
pF
VSS = 15V
V
See Fig. 17a&b
Iss = 2.5A
ƒ = 1.0KHz, See Fig. 13a,b,c,d,e&f
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. Gate voltage applied to both gates.
ƒ When mounted on 1 inch square 2oz copper on FR-4.
„ Figures 1, 2 and 3: One Fet is biased with VGS = 9.0V and curves show response of the second FET.
See Fig.4.
… Figures 5, 6 and 7: G1 and G2 are shorted. See Fig.9a&b.
† The diode connected between the gate and source serves only as protection against ESD.
No gate over voltage rating is implied.
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IRF6156
100
100
10
BOTTOM
TOP
1
1.0V
0.1
20µs PULSE WIDTH
Tj = 25°C
IS, Source-to-Source Current (A)
IS, Source-to-Source Current (A)
TOP
VGS
7.0V
5.0V
4.5V
2.5V
1.8V
1.5V
1.2V
1.0V
10
BOTTOM
VGS
7.0V
5.0V
4.5V
2.5V
1.8V
1.5V
1.2V
1.0V
1.0V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.01
0.1
1
10
100
0.1
1000
1
10
100
1000
VSS, Source-to-Source Voltage (V)
VSS, Source-to-Source Voltage (V)
Fig 2. Typical Output Characteristics. „
Fig 1. Typical Output Characteristics. „
100.00
-
9V
T J = 25°C
Q2
+
IS, Source-to-Source Current (Α)
S2
G2
T J = 150°C
+
Q1
-
10.00
VSS
G1
S1
VSS = 15V
20µs PULSE WIDTH
1.00
1.0
1.5
2.0
2.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics. „
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Fig 4. Output and Transfer Test Circuit.
3
1200
1000
800
600
400
200
ID = 6.5A
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
RSS (on) , Source-to-Source On Resistance ( mΩ)
RSS(on) , Source-to -Source On Resistance ( mΩ)
IRF6156
60
50
VGS = 2.5V
40
VGS = 4.5V
30
20
0
5
10
VGS, Gate -to -Source Voltage (V)
15
20
25
30
35
IS , Source Current (A)
Fig 6. Typical On-Resistance vs. Source
Current. …
Fig 5. Typical On-Resistance vs. Gate
Voltage. …
100000
10
9
10000
IGSS , Gate Current (µA)
IGSS , Gate Current ( mA)
8
7
6
5
4
3
1000
T J = 150°C
100
10
1
2
T J = 25°C
0.1
1
0.01
0
0
5
10
15
VGS , Gate-to-Source Voltage (V)
Fig 7a. Gate-Current vs. Gate-Source
Voltage
4
20
0
5
10
15
20
25
VGS , Gate-to-Source Voltage (V)
Fig 7b. Gate-Current vs. Gate-Source
Voltage
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IRF6156
7
ID = 6.5A
VGS = 4.5V
IS, Source Current (A)
6
1.5
(Normalized)
RSS(on) , Source-to-Source On Resistance
2.0
1.0
5
4
3
2
1
0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 8. Normalized On-Resistance
vs. Temperature. …
25
50
75
S1
S2
DUT
G2
G1
S2
To Source
Fig 10a. VGS(th) is symmetrical and
can be measured when connected
as shown on figure 10a.
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To Drain
Q1
Q2
G2
150
Fig 9. Maximum Source Current vs.
Case Temperature.
Q2
DUT
G1
125
T C , Case Temperature (°C)
To Drain
Q1
100
S1
To Source
Fig 10b. VGS(th) is symmetrical and
can be measured when connected
as shown on figure 10b.
5
IRF6156
2.5V
4.5V
-
Q1
S1
2.5V
4.5V
+
-
Q2
+
G2
Q1
Q2
G2
DUT
DUT
G1
S2
G1
S2
Fig 11a
S1
Fig 11b
RSS(on) is symmetrical and can be measured when connected as shown
in either figures 11a or 11b.
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds
Crss = Cgd
SHORTED
C, Capacitance(pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
0
5
10
15
20
VSS, Source-to-Source Voltage (V)
Fig 12. Typical Capacitance vs.
Source-to-Source Voltage.
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IRF6156
33K
-
Low
S2
+
4.5V
1µF
Capacitance
Bridge
S2
High
+
1µF
10MΩ
G2
16V
1µF
G1
1µF
16V
+
G1
-
+
S1
S1
4.5V
10MΩ
-
33K
Low
-
DUT
DUT
G2
High
33K
Capacitance
Bridge
33K
Fig 13b
Fig 13a
Ciss capacitance is symmetrical and can be measured as shown either in figures 13a or 13b.
-
33K
4.5V
+
H
S2
+
G2
1µF
16V
1µF
-
G1
G2
L
33K
DUT
DUT
L
Capacitance
Bridge
H
S2
Capacitance
Bridge
-
G1
16V
+
S1
S1
+
33K
4.5V
33K
-
Fig 13c
Fig 13d
Coss capacitance is symmetrical and can be measured as shown either in figures 13c or 13d.
-
33K
4.5V
Common
33K
+
S2
+
DUT
G2
1µF
-
G1
H
Capacitance
Bridge
L
DUT
L
Capacitance
Bridge H
S2
16V
G2
1µF
-
G1
16V
S1
+
33K
Common
S1
+
-
Fig 13e
4.5V
33K
Fig 13f
Crss capacitance is symmetrical and can be measured as shown either in figures 13e or 13f.
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7
IRF6156
6.0
VGS , Gate-to-Source Voltage (V)
ID= 6.5A
5.0
VDS= 16V
VDS= 10V
4.0
QG
QGS
3.0
QGD
QG1-S2
VG
2.0
1.0
Charge
0.0
0
2
4
6
8
10
12
14
Q G Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs.
Gate-to-Source Voltage.
Fig 14a. Basic Gate Charge Waveform.
Current Regulator
S2
4.5
V
50K
+
12V
-
2µ
F
G1
+
12V
2µF
G2
50K
+
.5µF
S2
.5µF
-
G1
+
S1
16V
-
4.5
V
Same type as DUT
G2
Current Regulator
Same type as DUT
+
+
16V
S1
-
-
S2
IG
4.5V
+
DUT
DUT
G2
G2
G1
ID
S2
3mA
G1
+
S1
3mA
4.5V
-
IG
Fig 14b
S1
ID
Fig 14c
Gate Charge is symmetrical and can be measured as shown in either figures 14b or 14c.
8
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IRF6156
100.00
100
Iss , Reverse Source Current (A)
IS, Source-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R SS(on)
100µsec
10
1msec
1
10msec
TA = 25°C
Tj = 150°C
Single Pulse
TJ = 150°C
10.00
1.00
TJ = 25°C
VGS = 0V
0.10
0.1
1
10
0.0
100
VSS , Source-to-Source Voltage (V)
Fig 15. Maximum Safe Operating
Area.
0.5
1.0
1.5
-
Q1
S1
Fig 16. Typical Source-Source Diode
Forward Voltage.
(See Fig.17a&b for Connection)
-
Q2
S2
DUT
Q2
G2
To Drain (-VS)
4.5V+
DUT
G1
2.5
Vssf , Source-to-Source Diode Forward Voltage (V)
To Drain (-VS)
4.5V+
2.0
G2
Q1
G1
S2
S1
To Source
Fig 17a
To Source
Fig 17b
Vssf is symmetrical and can be measured when connected as shown
either in figures 17a or 17b.
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IRF6156
50
VGS(th) Gate threshold Voltage (V)
1.0
40
Power (W)
30
20
10
0
0.8
0.6
ID = 250µA
0.4
0.2
0.0
1.00
10.00
100.00
1000.00
-75
-50
-25
Time (sec)
0
25
50
75
100 125 150
T J , Temperature ( °C )
Fig 18. Typical Power vs. Time.
Fig 19. Threshold Voltage vs. Temperature.
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
P DM
t1
t2
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D =
2. Peak T
t1 / t 2
J = P DM x Z thJA
+TA
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 20. Typical Effective Transient Thermal Impedance, Junction-to-Ambient.
10
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IRF6156
RS = 10ohm
S2
4.5V
10V
G2
VGS
DUT
6ohm
G2
S2
6ohm
+
DUT
VGS
4.5V
G1
10V
-
+
S1
G1
S1
RS = 10ohm
Fig 21b
Fig 21a
Switching times are symmetrical and can be measured as shown
in either figures 21a or 21b.
td(on)
tr
t d(off)
tf
VGS
10%
90%
VDS
Fig 21c. Switching Time Waveforms.
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11
IRF6156
S1
S2
Q1
Q2
G2
Q1
Q2
G2
DUT
DUT
G1
G1
S2
S1
Fig 22b
Fig 22a
IGSS Test Connection
Q1
S1
S2
DUT
DUT
G1
G2
Q1
Q2
G2
Q2
S2
Fig 23a
G1
S1
Fig 23b
ISSS and V(BR)SSS are symmetrical and can be measured when connected
either as figures 23a or 23b.
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IRF6156
Bi-Directional MOSFET Pinout Outline Dimension and Tape and Reel Information
Drawing No. 01-0115
A1 BALL
LOCATION MARK
NOTES:
PART NUMBER
1. DIMENSIONING & TOLERANCINGPER ASME Y14.5M-1994.
LOT NUMBER
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
DATE CODE
0.10 [.004] C
0.05 [.002] C
1.524
[.060]
B
0.280 [.0110]
0.240 [.0094]
A
C
0.10 [.004] C
PAD ASSIGNMENTS
A1 =
A2 =
B1 =
B2 =
C1 =
C2 =
0.80
2X
[.032]
2.324
[.092]
6X Ø
0.537 [.0211]
0.507 [.0199]
0.388 [.0153]
0.338 [.0133]
0.15 [.006]
0.08 [.003]
C AB
C
G1
G2
S1
S2
S1
S2
0.812 [.032]
0.752 [.029]
0.20 [.008] C
0.800 [.032]
Gate 1
A1
Gate 2
A2
Ø 13"
S ource 1
B1
S ource 2
B2
S ource 1
C1
S ource 2
C2
0.800 [.032]
2x
12mm
6X Ø 0.25 [.010]
R E COMME NDE D F OOT PR INT
A1 B ALL
L OCAT ION
12mm
4mm
F E E D DIRE CT ION
NOT E S :
1. T AP E AND RE E L OU T LINE CONF ORMS T O E IA-481 & E IA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/03
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