IRF IRF7707

PD -93996
IRF7707
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
VDSS
RDS(on) max
ID
-20V
22mΩ@VGS = -4.5V
33mΩ@VGS = -2.5V
-7.0A
-6.0A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
1
8
D
2
7
3
G
4
1=
2=
3=
4=
D
S
S
G
6
S
5
8=
7=
6=
5=
D
S
S
D
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-7.0
-5.7
-28
1.5
1.0
0.01
±12
-55 to +150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambientƒ
Max.
Units
83
°C/W
1
10/04/00
IRF7707
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.012
14.3
18.9
–––
–––
–––
–––
–––
–––
31
6.4
10
11
54
134
138
2361
512
323
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
22
VGS = -4.5V, ID = -7.0A ‚
mΩ
33
VGS = -2.5V, ID = -6.0A ‚
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -7.0A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
47
ID = -7.0A
–––
nC
VDS = -16V
–––
VGS = -4.5V
17
VDD = -10V
81
ID = -1.0A
ns
201
RG = 6.0Ω
207
VGS = -4.5V ‚
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.5
–––
–––
-28
–––
–––
–––
–––
142
147
-1.2
213
221
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.5A, VGS = 0V ‚
TJ = 25°C, I F = -1.5A
di/dt = -100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
ƒ When mounted on 1 inch square copper board, t < 10sec.
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
www.irf.com
IRF7707
100
VGS
-7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
100
VGS
-7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
10
-1.5V
1
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
10
-1.5V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 150 ° C
10
TJ = 25 ° C
V DS = -15V
20µs PULSE WIDTH
1.5
2.0
2.5
3.0
3.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
100
1
1.0
1
-VDS, Drain-to-Source Voltage (V)
4.0
ID = -7.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7707
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2800
Ciss
2100
1400
Coss
700
Crss
10
-VGS , Gate-to-Source Voltage (V)
3500
10
6
4
2
0
100
0
10
-VDS , Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
10
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
V DS =-16V
8
0
1
ID = -7.0A
1.6
1
0.1
10ms
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7707
8.0
VDS
-ID , Drain Current (A)
VGS
6.0
RD
D.U.T.
RG
+
VDD
VGS
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
0.0
10%
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
0.120
RDS ( on ) , Drain-to-Source On Resistance (Ω )
(
RDS(on), Drain-to -Source On Resistance Ω)
IRF7707
0.080
0.040
ID = -7.0A
0.000
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.200
0.150
0.100
VGS = -2.5V
0.050
VGS = -4.5V
0.000
0
10
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
20
30
40
50
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
D.U.T.
QGS
+VDS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
www.irf.com
IRF7707
TSSOP-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
PART NUMBER
T ABLE 1
XXYW
7702
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.)
DAT E CODE EXAMPLES :
9503 = 5C
9532 = EF
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
T ABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
WEEK
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
Ø 13"
16 mm
16mm
8 mm
FEED DIRECT ION
NOT ES:
1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541.
www.irf.com
7
IRF7707
TSSOP-8 Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
8
www.irf.com