10RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 10 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature RoHS COMPLIANT • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available • Types up to 1200 V VDRM/VRRM • RoHS compliant TO-208AA (TO-48) • Designed and qualified for industrial and consumer level TYPICAL APPLICATIONS • Medium power switching PRODUCT SUMMARY IT(AV) 10 A • Phase control applications • Can be supplied to meet stringent military, aerospace and other high reliability requirements MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES UNITS 10 A TC 85 °C 25 A 50 Hz 225 60 Hz 240 50 Hz 255 60 Hz 233 IT(RMS) ITSM I2 t A VDRM/VRRM tq TJ Document Number: 93689 Revision: 06-Jun-08 Typical A2 s 100 to 1200 V 110 µs - 65 to 125 °C For technical questions, contact: [email protected] www.vishay.com 1 10RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 10 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 10RIA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 10 100 150 20 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 10 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs (2) For voltage pulses with t ≤ 5 ms p ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) TEST CONDITIONS 180° conduction, half sine wave IT(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms Maximum for fusing I2√t A 85 °C 25 A No voltage reapplied 225 100 % VRRM reapplied 190 No voltage reapplied 240 Sinusoidal half wave, initial TJ = TJ maximum 200 233 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 2550 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.10 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.39 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 24.3 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 16.7 Ipk = 32 A, TJ = 25 °C, tp = 10 ms sine pulse 1.75 Maximum holding current IH Typical latching current IL www.vishay.com 2 TJ = 25 °C, anode supply 12 V resistive load For technical questions, contact: [email protected] A2 s 165 VT(TO)1 VTM A 255 Low level value of threshold voltage Maximum on-state voltage UNITS 10 180 t = 8.3 ms I2√t VALUES A2√s V mΩ 130 200 V mA Document Number: 93689 Revision: 06-Jun-08 10RIA Series Medium Power Thyristors Vishay High Power Products (Stud Version), 10 A SWITCHING PARAMETER SYMBOL TEST CONDITIONS VDRM ≤ 600 V Maximum rate of rise of turned-on current VDRM ≤ 800 V VDRM ≤ 1000 V UNITS 200 dI/dt VDRM ≤ 1600 V TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum ITM = (2 x rated dI/dt) A 180 A/µs 160 150 Typical turn-on time tgt TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C Typical reverse recovery time trr TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs tq TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V, dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM, gate bias 0 V to 100 W Typical turn-off time VALUES 0.9 4 µs 110 Note • tq = 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES TJ = TJ maximum linear to 100 % rated VDRM 100 TJ = TJ maximum linear to 67 % rated VDRM 300 (1) UNITS V/µs Note Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 10RIA120S90 (1) TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power SYMBOL PGM PG(AV) TEST CONDITIONS VALUES 8.0 TJ = TJ maximum 2.0 UNITS W Maximum peak positive gate current IGM TJ = TJ maximum 1.5 A Maximum peak negative gate voltage -VGM TJ = TJ maximum 10 V TJ = - 65 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger Document Number: 93689 Revision: 06-Jun-08 VGD Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied 90 60 mA 35 TJ = - 65 °C 3.0 TJ = 25 °C 2.0 TJ = 125 °C 1.0 TJ = TJ maximum, VDRM = Rated value 2.0 mA 0.2 V TJ = TJ maximum, VDRM = Rated value Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied For technical questions, contact: [email protected] V www.vishay.com 3 10RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 10 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthCS VALUES UNITS - 65 to 125 °C DC operation 1.85 K/W Mounting surface, smooth, flat and greased 0.35 Lubricated threads (Non-lubricated threads) Mounting torque TO NUT TO DEVICE 20 (27.5) 25 lbf ⋅ in 0.23 (0.32) 0.29 kgf · m 2.3 (3.1) 2.8 N·m Approximate weight Case style See dimensions - link at the end of datasheet 14 g 0.49 oz. TO-208AA (TO-48) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.44 0.32 120° 0.53 0.56 90° 0.68 0.75 60° 1.01 1.05 30° 1.71 1.73 TEST CONDITIONS UNITS TJ = TJ maximum K/W 130 10RIA Series RthJC (DC) = 1.85 K/W 120 110 100 90 Conduction Angle 80 30° 60° 70 90° 120° 60 180° 50 40 0 www.vishay.com 4 2 4 6 8 10 12 14 16 18 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 10RIA Series RthJC (DC) = 1.85 K/W 120 110 100 90 Conduction Period 80 30° 60° 70 90° 120° 60 180° 50 DC 40 0 5 10 15 20 25 30 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics For technical questions, contact: [email protected] Document Number: 93689 Revision: 06-Jun-08 10RIA Series 35 W K/ 3K /W ta el -D 4K /W RMS Limit 5K /W 7K /W 15 Conduction Angle 10 10RIA Series TJ = 125°C 5 R 20 K/ W 1 25 2 = 180° 120° 90° 60° 30° 30 SA R th Maximum Average On-state Power Loss (W) Medium Power Thyristors Vishay High Power Products (Stud Version), 10 A 10 K /W 0 0 2 4 6 8 10 12 14 16 Average On-state Current (A) 0 18 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 45 DC 180° 120° 90° 60° 30° 40 35 30 R SA th Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 25 20 = 1 2K /W 3K /W 4K /W RMS Limit 15 Conduction Period 10 5K /W 7 K/W 10RIA Series TJ = 125°C 10 K/W 5 K/ W -D el ta R 0 0 5 10 15 20 25 Average On-state Current (A) 30 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 190 180 170 160 150 140 130 120 110 10RIA Series 100 90 1 10 100 Peak Half Sine Wave On-state Current (A) 240 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated V RRMReapplied 220 200 180 160 140 120 100 10RIA Series 80 0.01 Fig. 5 - Maximum Non-Repetitive Surge Current Document Number: 93689 Revision: 06-Jun-08 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] www.vishay.com 5 10RIA Series Vishay High Power Products Medium Power Thyristors Instantaneous On-state Current (A) (Stud Version), 10 A 1000 100 TJ = 25°C TJ = 125°C 10 10RIA Series 1 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance ZthJC (K/W) Fig. 7 - Forward Voltage Drop Characteristics 10 Steady State Value R thJC = 1.85 K/W (DC Operation) 1 10RIA Series 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 µs, tp >= 6 µs b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 µs, tp >= 6 µs (1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 1ms (a) (b) VGD Tj = -65 °C Tj = 125 °C 1 Tj = 25 °C Instantaneous Gate Voltage (V) 100 (1) IGD 0.1 0.001 (2) (3) (4) 10RIA Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93689 Revision: 06-Jun-08 10RIA Series Medium Power Thyristors Vishay High Power Products (Stud Version), 10 A ORDERING INFORMATION TABLE Device code 10 RIA 120 M S90 1 2 3 4 5 1 - Current code 2 - Essential part number 3 - Voltage code x 10 = VRRM (see Voltage Ratings table) 4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = Stud base TO-208AA (TO-48) M6 x 1 5 - Critical dV/dt: None = 300 V/µs (standard value) S90 = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93689 Revision: 06-Jun-08 http://www.vishay.com/doc?95333 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1