VS-25RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 25 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available TO-208AA (TO-48) • Types up to 1200 V VDRM/VRRM • Designed and qualified for industrial and consumer level PRODUCT SUMMARY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Package TO-208AA (TO-48) Diode variation Single SCR IT(AV) 25 A VDRM/VRRM 100 V, 1200 V VTM 1.70 V • Phase control applications IGT 60 mA TJ -65 °C to +125 °C TYPICAL APPLICATIONS • Medium power switching MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) I2t A TC 85 °C 40 A 50 Hz 420 60 Hz 440 50 Hz 867 60 Hz 790 VDRM/VRRM tq UNITS 25 IT(RMS) ITSM VALUES Typical TJ A A2s 100 to 1200 V 110 μs -65 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-25RIA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM PEAK VOLTAGE (2) AT TJ = TJ MAXIMUM mA V 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 20 10 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs (2) For voltage pulses with t 5 ms p Revision: 11-Jan-16 Document Number: 93701 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) TEST CONDITIONS 180° sinusoidal conduction IT(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied UNITS 25 A 85 °C 40 A 420 No voltage reapplied 100 % VRRM reapplied VALUES 440 350 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied A 370 867 790 615 A2s 560 t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum 8670 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.99 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.40 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 10.1 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 5.7 Ipk = 79 A, TJ = 25 °C 1.70 A2s V m Maximum on-state voltage VTM Maximum holding current IH Latching current IL TJ = 25 °C, anode supply 6 V, resistive load 130 200 V mA SWITCHING PARAMETER SYMBOL VDRM 600 V Maximum rate of rise of turned-on current VDRM 800 V VDRM 1000 V Typical reverse recovery time Typical turn-off time VALUES UNITS 200 dI/dt VDRM 1600 V Typical turn-on time TEST CONDITIONS TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum ITM = (2 x rated dI/dt) A 180 160 A/μs 150 tgt TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C 0.9 trr TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, dI/dt = - 10 A/μs 4 tq TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V, dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM, gate bias 0 V to 100 W μs 110 Note • tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES TJ = TJ maximum linear to 100 % rated VDRM 100 TJ = TJ maximum linear to 67 % rated VDRM 300 (1) UNITS V/μs Note (1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 25RIA120S90 Revision: 11-Jan-16 Document Number: 93701 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) TEST CONDITIONS VALUES 8.0 TJ = TJ maximum 2.0 UNITS W Maximum peak positive gate current IGM TJ = TJ maximum 1.5 A Maximum peak negative gate voltage -VGM TJ = TJ maximum 10 V TJ = - 65 °C 90 DC gate current required to trigger IGT TJ = 25 °C Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = 125 °C TJ = - 65 °C 60 mA 35 3.0 V DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C 1.0 DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated value 2.0 mA 0.2 V VALUES UNITS -65 to +125 °C DC gate voltage not to trigger VGD TJ = TJ maximum, VDRM = Rated value Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 2.0 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum operating junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 0.75 Maximum thermal resistance, case to heat sink RthCS Mounting surface, smooth, flat and greased 0.35 K/W Non-lubricated threads 3.4 + 0 - 10 % (30) Lubricated threads 2.3 + 0 - 10 % (20) Allowable mounting torque Approximate weight Case style See dimensions - link at the end of datasheet N·m (lbf in) 14 g 0.49 oz. TO-208AA (TO-48) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.17 0.13 120° 0.21 0.22 90° 0.27 0.30 60° 0.40 0.42 30° 0.69 0.70 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Jan-16 Document Number: 93701 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series Vishay Semiconductors 130 25RIA Series RthJC (DC) = 0.75 K/W 120 110 Conduction Angle 30° 100 60° 90° 120° 180° 90 80 0 5 10 15 20 25 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 25RIA Series R thJC (DC) = 0.75 K/W 120 110 Conduction Period 30° 100 60° 90° 120° 90 180° DC 80 0 30 10 20 30 40 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics 45 3K /W R 25 K/ W a elt -D 30 2 W K/ 35 =1 180° 120° 90° 60° 30° 40 A hS Rt Maximum Average On-state Power Loss (W) Average On-state Current (A) 4K /W 5K /W RMS Limit 20 15 Conduction Angle 10 25RIA Series TJ = 125°C 5 7K /W 0 0 5 10 15 20 25 Average On-state Current (A) 30 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 60 DC 180° 120° 90° 60° 30° 55 1 W K/ ta el -D 40 = 45 SA th 50 R 2K /W 35 R Maximum Average On-state Power Loss (W) Fig. 2 - On-State Power Loss Characteristics 3K /W 4K /W 30 25 RMS Limit 20 15 10 Conduction Period 5K /W 25RIA Series TJ = 125°C 7 K/W 5 0 0 5 10 15 20 25 30 Average On-state Current (A) 35 0 40 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics Revision: 11-Jan-16 Document Number: 93701 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series www.vishay.com 450 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 350 325 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 375 Vishay Semiconductors 300 275 250 225 25RIA Series 200 175 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRMReapplied 425 400 375 350 325 300 275 250 225 200 175 25RIA Series 150 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 25RIA Series 100 10 TJ = 25°C TJ = 125°C 1 0.5 1 1.5 2 2.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 6 - Forward Voltage Drop Characteristics 1 Steady State Value R thJC = 0.75 K/W (DC Operation) 0.1 25RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 7 - Thermal Impedance ZthJC Characteristics Revision: 11-Jan-16 Document Number: 93701 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25RIA Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 µs, tp >= 6 µs b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 µs, tp >= 6 µs (1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 1ms (a) (b) 1 VGD Tj = -65 °C Tj = 125 °C Tj = 25 °C Instantaneous Gate Voltage (V) 100 (1) IGD (2) (3) (4) 25RIA Series Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 25 RIA 120 M S90 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current code 3 - Essential part number 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - None = stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = stud base TO-208AA (TO-48) M6 x 1 6 - Critical dV/dt: None = 300 V/µs (standard value) S90 = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95333 Revision: 11-Jan-16 Document Number: 93701 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-208AA (TO-48) DIMENSIONS in millimeters (inches) Ø 1.7/1.8 (Ø 0.06/0.07) Ø 3.9/4.1 (Ø 0.15/0.16) 30.2 MAX. (0.18 MAX.) 22.2 MAX. (0.87 MAX.) 12.8 MAX. (0.5 MAX.) 10.7/11.5 (0.42/0.45) 1/4"-28UNF-2A For metric device M6 x 1 Ø 15.5 (Ø 0.61) (0 3.1 .1 /3 2/ .3 0. 1. 13 (0 24 ) .0 /1 4/ .4 0. 4 05 ) 13.8/14.3 (0.54/0.56) Across flats 45° Document Number: 95333 Revision: 07-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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