INFINEON BTS3142D

HITFET  BTS 3142 D
Smart Lowside Power Switch
Features
Product Summary
•Logic Level Input
Drain source voltage
VDS
42
V
•Input Protection (ESD)
On-state resistance
R DS(on)
28
mΩ
•Thermal shutdown
Nominal load current
ID(Nom)
4.6
A
•Overload protection
Clamping energy
EAS
3.5
J
•Short circuit protection
•Overvoltage protection
•Current limitation
•Analog driving possible
Application
•All kinds of resistive, inductive and capacitive loads in switching
or linear applications
•µC compatible power switch for 12 V DC applications
•Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  technology. Fully protected by embedded
protection functions.
Vbb
M
HITFET 
Drain
Current
Limitation
In
Pin 2 and 4 (TAB)
OvervoltageProtection
Gate-Driving
Unit
Pin 1
ESD
Overload
Protection
Overtemperature
Protection
Short circuit
Protection
Pin 3
Source
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BTS 3142 D
Maximum Ratings at T j = 25°C, unless otherwise specified
Parameter
Symbol
Value
Drain source voltage
VDS
42
Drain source voltage for short circuit protection
VDS(SC)
28
Unit
V
Tj = -40...150°C
Continuous input current
IIN
mA
-0.2V ≤ VIN ≤ 10V
no limit
VIN < -0.2V or VIN > 10V
| IIN | ≤ 2
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
-55 ... +150
Power dissipation
Ptot
°C
W
TC = 85 °C
59
6cm2 cooling area , TA = 85 °C
1.1
Unclamped single pulse inductive energy 1)
EAS
3.5
J
Load dump protection VLoadDump2) = VA + VS
VLD
67.5
V
2
kV
VIN = 0 and 10 V, td = 400 ms, RI = 2 Ω,
RL = 3 Ω, VA = 13.5 V
Electrostatic discharge voltage (Human Body Model)
VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
RthJC
SMD: junction - ambient
RthJA
1.1
@ min. footprint
115
@ 6 cm2 cooling area 3)
55
K/W
1 Not tested, specified by design.
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
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BTS 3142 D
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
42
-
55
V
-
1.5
20
µA
Characteristics
Drain source clamp voltage
VDS(AZ)
Tj = - 40 ...+ 150, I D = 10 mA
Off-state drain current Tj = -40 ... +150°C
IDSS
VDS = 32 V, VIN = 0 V
Input threshold voltage
V
VIN(th)
ID = 1.2 mA, Tj = 25 °C
1.3
1.7
2.2
ID = 1.2 mA, Tj = 150 °C
0.8
-
-
-
10
30
On state input current
IIN(on)
On-state resistance
RDS(on)
mΩ
VIN = 5 V, ID = 4.6 A, T j = 25 °C
-
27
34
VIN = 5 V, ID = 4.6 A, T j = 150 °C
-
54
68
VIN = 10 V, I D = 4.6 A, Tj = 25 °C
-
23
28
VIN = 10 V, I D = 4.6 A, Tj = 150 °C
-
46
56
On-state resistance
µA
RDS(on)
Nominal load current
A
ID(Nom)
Tj < 150°C, VIN = 10 V, TA = 85 °C, SMD 1)
Nominal load current
4.6
-
-
ID(ISO)
12.6
-
-
ID(lim)
30
45
55
VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C
Current limit (active if VDS>2.5 V)2)
VIN = 10 V, VDS = 12 V, tm = 200 µs
[email protected] 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of I
D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Page 3
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BTS 3142 D
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ton
-
60
120
toff
-
60
120
-dV DS/dton
-
0.3
1.5
dV DS/dtoff
-
0.3
1.5
150
175
-
°C
µA
Dynamic Characteristics
Turn-on time
VIN to 90% I D:
µs
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% I D:
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
V/µs
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions1)
Thermal overload trip temperature
T jt
Input current protection mode
IIN(Prot)
-
220
400
Input current protection mode
IIN(Prot)
-
180
400
EAS
3.5
-
-
J
VSD
-
1.0
-
V
Tj = 150 °C
Unclamped single pulse inductive energy 2)
ID = 4.6 A, T j = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
IF = 51 A, t m = 250 µs, V IN = 0 V,
tP = 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
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BTS 3142 D
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
I IN
2
1
D
Z
D
IN
ID
VDS Vbb
HITFET
S
S
3
VIN
HITFET
Short circuit behaviour
Input circuit (ESD protection)
V
IN
Gate Drive
Input
I
Source/
Ground
IN
I
D
T
t
t
t
j
t
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BTS 3142 D
1 Maximum allowable power dissipation
2 On-state resistance
Ptot = f(T C) resp.
RON = f(T j); ID=12.6A; V IN=10V
Ptot = f(T A) @ R thJA=55 K/W
5
60
max.
W
mΩ
Rthjc = 1.1 K/W
R DS(on)
4
Ptot
3.5
3
2.5
40
typ.
30
2
SMD @ 6cm2
20
1.5
1
10
0.5
0
-50
-25
0
25
50
75
100
°C
0
-50
150
-25
0
25
50
75
100 125 °C
TA;TC
175
Tj
3 On-state resistance
4 Typ. input threshold voltage
RON = f(T j); ID= 12.6A; V IN=5V
VIN(th) = f(T j); I D = 1.2 mA; V DS = 12V
80
2
V
mΩ
max.
50
typ.
VGS(th)
R DS(on)
1.6
60
40
1.4
1.2
1
0.8
30
0.6
20
0.4
10
0
-50
0.2
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
-25
0
25
50
75
100
°C
150
Tj
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BTS 3142 D
5 Typ. transfer characteristics
6 Typ. short circuit current
ID=f(V IN); V DS=12V; TJstart =25°C
ID(lim) = f(T j); VDS=12V
Parameter: V IN
50
60
A
A
50
40
45
35
ID
ID
40
30
35
25
30
Vin=10V
20
25
5V
20
15
15
10
10
5
5
0
1
2
3
4
5
6
7
V
8
0
-50
10
-25
0
25
50
75
100 125 °C
VIN
175
Tj
7 Typ. output characteristics
8 Typ. off-state drain current
ID=f(V DS); TJstart=25°C
Parameter: V IN
I DSS = f(T j)
60
25
A
µA
50
10V
45
7V
max.
20
I DSS
6V
40
ID
5V
35
4V
30
17.5
15
12.5
25
10
20
7.5
15
Vin=3V
5
10
typ.
2.5
5
0
0
1
2
3
4
V
0
-50
6
VDS
-25
0
25
50
75
100 125 °C
175
Tj
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BTS 3142 D
9 Typ. overload current
10 Typ. transient thermal impedance
I D(lim) = f(t), Vbb=12 V, no heatsink
Z thJA=f(t p) @ 6 cm2 cooling area
Parameter: Tjstart
Parameter: D=tp/T
10
70
2
K/W
A
D=0.5
-40°C
10
1
0.2
25°C
Z thJA
I D(lim)
0.1
50
85°C
40
0.05
10
0
0.02
0.01
30
10
-1
10
-2
10
-3
150°C
20
Single pulse
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
ms
t
5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
s
10
tp
11 Determination of ID(lim)
I D(lim) = f(t); tm = 200µs
Parameter: TJstart
70
A
I D(lim)
-40°C
50
25°C
40
85°C
30
150°C
20
10
0
0
0.1
0.2
0.3
0.4
ms
0.6
t
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3
BTS 3142 D
Package
P-TO252-3-1
Ordering Code
Q67060-S6087-A101
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BTS 3142 D
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
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