PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package VCES = 600V VCE(on) typ. = 1.66V G @VGE = 15V, IC = 9.0A E n-cha nn el Benefits • Generation -4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 16 9.0 64 64 7.0 32 ± 20 60 24 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 0.50 ––– 2 (0.07) 2.1 3.5 ––– 80 ––– Units °C/W g (oz) 1 7/11/2000 IRG4BC20FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.72 VCE(on) Collector-to-Emitter Saturation Voltage — 1.66 — 2.06 — 1.76 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Transconductance T 2.9 5.1 ICES Zero Gate Voltage Collector Current — — — — V FM Diode Forward Voltage Drop — 1.4 — 1.3 IGES Gate-to-Emitter Leakage Current — — V(BR)CES Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 2.0 IC = 9.0A V GE = 15V — V IC = 16A See Fig. 2, 5 — IC = 9.0A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 9.0A 250 µA VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Q rr Diode Reverse Recovery Charge di (rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 27 4.2 9.9 43 20 240 150 0.25 0.64 0.89 41 22 320 290 1.35 7.5 540 37 7.0 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 40 IC = 9.0A 6.2 nC VCC = 400V See Fig. 8 15 VGE = 15V — TJ = 25°C — ns IC = 9.0A, VCC = 480V 360 VGE = 15V, RG = 50Ω 220 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 1.3 — TJ = 150°C, See Fig. 11, 18 — ns IC = 9.0A, VCC = 480V — VGE = 15V, RG = 50Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 55 ns TJ = 25°C See Fig. 90 TJ = 125°C 14 IF = 8.0A 5.0 A TJ = 25°C See Fig. 8.0 TJ = 125°C 15 VR = 200V 138 nC TJ = 25°C See Fig. 360 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 www.irf.com IRG4BC20FD 14 For both: D uty cy cle: 50% TJ = 125°C T s ink = 90°C G ate drive as specified P ow e r Dis sip ation = 13 W LOAD CURRENT (A) 12 10 8 S q u a re w a v e : 6 0% of rate d volta ge 6 I 4 Id e a l d io d e s 2 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 o C TJ = 150 o C 10 V = 15V 20µs PULSE WIDTH GE 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 o C 10 TJ = 25 oC V = 50V 5µs PULSE WIDTH CC 1 5 6 7 8 9 10 11 12 13 14 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20FD 16 3.0 V = 15V 80 us PULSE WIDTH IC = 18 A VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE 12 8 4 0 25 50 75 100 125 150 A IC = 9.0 9A 2.0 IC = 4.5 A 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20FD VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 800 Cies 600 400 Coes 200 C res 20 VGE , Gate-to-Emitter Voltage (V) 1000 10 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) 10 Total Switching Losses (mJ) Total Switching Losses (mJ) 0.86 0.84 0.82 0.80 0.78 10 20 30 40 Ω RG , Gate Resistance (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 10 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C 0.88 I C = 9.0A 0 5 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.90 VCC = 400V I C = 9.0A 16 0 1 50 Ω RG = 50Ohm VGE = 15V VCC = 480V IC = 18 A IC = 9.09 A 1 IC = 4.5 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20FD 100 = 50Ohm Ω = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) RG TJ VCC 2.5 VGE 2.0 1.5 1.0 0.5 VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 1 0.0 0 4 8 12 16 1 20 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 100 In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) Total Switching Losses (mJ) 3.0 10 TJ = 1 50 °C TJ = 1 25 °C TJ = 25 °C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 F o rw a rd V o lta g e D ro p - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20FD 100 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 80 I F = 8 .0A I IR R M - (A ) t rr - (ns) IF = 16 A 60 I F = 1 6A 10 IF = 8 .0 A 40 I F = 4.0 A I F = 4 .0 A 20 0 100 1 100 1000 d i f /d t - (A /µ s) 1000 di f /dt - (A /µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 10000 500 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C d i(re c )M /d t - (A /µ s ) Q R R - (n C ) 400 300 I F = 16 A 200 I F = 8 .0A I F = 4.0 A 1000 IF = 8 .0 A I F = 1 6A 100 IF = 4.0 A 0 100 di f /dt - (A /µs) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 1000 100 100 1000 d i f /d t - (A /µ s ) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4BC20FD 90% Vge Same ty pe device as D .U.T. +Vge Vce 430µF 80% of Vce D .U .T. Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1 + 5 µ S V c e icIcd tdt Vce t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic trr id t Ic ddt tx ∫ +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIc d t dt E o n = VVce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc d t dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC20FD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4BC20FD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline TO-220AB 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 4 3.78 (.149) 3.54 (.139) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255 ) 6.10 (.240 ) 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1.15 (.045) M IN 1 2 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . LEAD 1234- 3 3X 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) -B - 4.69 (.185) 4.20 (.165) 3.96 (.160) 3.55 (.140) A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.01 4 ) M B A M 2 .5 4 (.1 0 0) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2X CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 7/00 10 www.irf.com