INFINEON IPP90R800C3

IPP90R800C3
CoolMOS™ Power Transistor
Product Summary
Features
• Lowest figure-of-merit R ON x Qg
• Extreme dv/dt rated
V DS @ T J=25°C
900
V
R DS(on),max @ T J= 25°C
0.8
Ω
Q g,typ
42
nC
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
PG-TO220
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
Package
Marking
IPP90R800C3
PG-TO220
9R800C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
6.9
T C=100 °C
4.4
Pulsed drain current2)
I D,pulse
T C=25 °C
15
Avalanche energy, single pulse
E AS
I D=1.4 A, V DD=50 V
157
Avalanche energy, repetitive t AR2),3)
E AR
I D=1.4 A, V DD=50 V
0.46
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T J, T stg
Mounting torque
Rev. 1.0
Unit
A
mJ
1.4
A
V DS=0...400 V
50
V/ns
static
±20
V
AC (f>1 Hz)
±30
T C=25 °C
104
W
-55 ... 150
°C
M3 and M3.5 screws
page 1
60
Ncm
2008-07-30
IPP90R800C3
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
4.1
T C=25 °C
A
15
4
V/ns
Values
Unit
min.
typ.
max.
-
-
1.2
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
900
-
-
V
K/W
Electrical characteristics, at T J=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.46 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=900 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=900 V, V GS=0 V,
T j=150 °C
-
10
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=4.1 A,
T j=25 °C
-
0.62
0.8
Ω
V GS=10 V, I D=4.1 A,
T j=150 °C
-
1.7
-
f =1 MHz, open drain
-
1.3
-
Gate resistance
Rev. 1.0
RG
page 2
Ω
2008-07-30
IPP90R800C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1100
-
-
52
-
-
34
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related 5)
C o(er)
Effective output capacitance, time
related 6)
C o(tr)
-
130
-
Turn-on delay time
t d(on)
-
70
-
Rise time
tr
-
20
-
Turn-off delay time
t d(off)
-
400
-
Fall time
tf
-
32
-
Gate to source charge
Q gs
-
5
-
Gate to drain charge
Q gd
-
18
-
Gate charge total
Qg
-
42
tbd
Gate plateau voltage
V plateau
-
4.6
-
V
-
0.8
1.2
V
-
360
-
ns
-
5.3
-
µC
-
24
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 500 V
V DD=400 V,
V GS=10 V, I D=4.1 A,
R G=50 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=4.1 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=4.1 A,
T J=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T J,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD≤ID, di/dt≤ 200 A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 50% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS.
Rev. 1.0
page 3
2008-07-30
IPP90R800C3
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
120
limited by on-state
resistance
100
1 µs
101
80
10 µs
I D [A]
P tot [W]
100 µs
1 ms
60
10 ms
DC
100
40
20
10-1
0
0
25
50
75
100
125
1
150
10
T C [°C]
100
1000
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
ZthJC=f(tP)
I D=f(V DS); T J=25 °C
parameter: D=t p/T
parameter: V GS
101
20
20 V
10 V
8V
6V
15
5.5 V
100
I D [A]
Z thJC [K/W]
0.5
0.2
10
5V
0.1
10-1
0.05
0.02
0.01
5
single pulse
4.5 V
4V
10
-2
10-5
0
10-4
10-3
10-2
10-1
t p [s]
Rev. 1.0
0
5
10
15
20
25
V DS [V]
page 4
2008-07-30
IPP90R800C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T J=150 °C
R DS(on)=f(I D); T J=150 °C
parameter: V GS
parameter: V GS
10
10
20 V
10 V
8V
6V
8
8
5V
4.5 V
I D [A]
R DS(on) [Ω]
6
4
6
10 V
4
5V
4V
4.8 V
2
4.5 V
2
0
4V
0
0
5
10
15
20
25
0
2
4
6
V DS [V]
8
10
12
14
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T J); I D=4.1 A; V GS=10 V
I D=f(V GS); V DS=20V
parameter: T J
2.5
20
25 °C
2
15
I D [A]
R DS(on) [Ω]
1.5
1
10
150 °C
98 %
typ
5
0.5
0
0
-60
-20
20
60
100
140
180
T J [°C]
Rev. 1.0
0
2
4
6
8
10
V GS [V]
page 5
2008-07-30
IPP90R800C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=4.1 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T J
10
102
8
25 °C, 98%
150 °C, 98%
101
720 V
400 V
I F [A]
V GS [V]
6
25 °C
4
150 °C
100
2
10-1
0
0
10
20
30
40
0
50
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T J); I D=1.4 A; V DD=50 V
V BR(DSS)=f(T J); I D=0.25 mA
160
1050
140
1000
120
V BR(DSS) [V]
E AS [mJ]
100
80
60
950
900
40
850
20
0
800
25
50
75
100
125
150
T J [°C]
Rev. 1.0
-60
-20
20
60
100
140
180
T J [°C]
page 6
2008-07-30
IPP90R800C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
10000
6
5
Ciss
1000
E oss [µJ]
C [pF]
4
100
Coss
3
2
10
1
Crss
1
0
0
100
200
300
400
500
600
V DS [V]
Rev. 1.0
0
100
200
300
400
500
600
V DS [V]
page 7
2008-07-30
IPP90R800C3
Definition of diode switching characteristics
Rev. 1.0
page 8
2008-07-30
IPP90R800C3
PG-TO220 Outlines
Dimensions in mm/inches
Rev. 1.0
page 9
2008-07-30
IPP90R800C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.0
page 10
2008-07-30