feo06643 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S (E9087) 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 ... 5˚ 1.8 1.4 5.08 mm spacing BPW 34 Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GEO06643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit (typ. 20 ns) ● DIL-Plastikbauform mit hoher Packungsdichte ● BPW 34 S/(E9087): geeignet für Vapor-Phase Löten und IR-Reflow Löten (JEDEC level 4) Features ● Especially suitable for applications from 400 nm to 1100 nm ● Short switching time (typ. 20 ns) ● DIL plastic package with high packing density ● BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Anwendungen ● Lichtschranken für Gleich- und Wechsellichtbetrieb ● IR-Fernsteuerungen ● Industrieelektronik ● “Messen/Steuern/Regeln” Applications ● Photointerrupters ● IR remote controls ● Industrial electronics ● For control and drive circuits Semiconductor Group 1 1998-08-27 1.1 0.9 6.7 6.2 0...5 ˚ 0.2 0.1 0...0.1 0.3 1.2 1.1 Chip position feo06862 BPW 34, BPW 34 S BPW 34 S (E9087) 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.8 ±0.2 BPW 34 S 0...0.1 GEO06863 1.1 0.9 6.7 6.2 0...5 ˚ 0.3 1.2 1.1 Chip position Cathode lead 0.2 0.1 Photosensitive area 2.65 mm x 2.65 mm 1.7 1.5 BPW 34 S (E9087) 4.0 3.7 0.9 0.7 4.5 4.3 1.8 ±0.2 Cathode lead BPW34S Photosensitive area 2.65 mm x 2.65 mm GEO06916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code BPW 34 Q62702-P73 BPW 34 S Q62702-P1602 BPW 34 S (E9087) Q62702-P1790 Semiconductor Group 2 1998-08-27 BPW 34, BPW 34 S BPW 34 S (E9087) Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 ... + 85 °C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 80 (≥ 50) nA/Ix Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 nm Spektraler Bereich der Fotoempfindlichkeit λ 400 ... 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×B 2.65 × 2.65 mm × mm Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (≤ 30) nA Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Sλ 0.62 A/W Quantenausbeute, λ = 850 nm Quantum yield η 0.90 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 365 (≥ 300) mV Semiconductor Group 3 S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax L×W 1998-08-27 BPW 34, BPW 34 S BPW 34 S (E9087) Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Kurzschlußstrom, Ev = 1000 Ix Short-circuit current ISC 80 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA tr, tf 20 ns Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 850 nm NEP 4.1 × 10– 14 W √Hz Nachweisgrenze, VR = 10 V, λ = 850 nm Detection limit D* 6.6 × 1012 cm · √Hz W Semiconductor Group 4 1998-08-27 BPW 34, BPW 34 S BPW 34 S (E9087) Relative spectral sensitivity Srel = f (λ) Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) OHF00078 100 ΙP S rel % 80 OHF01066 10 3 µA Total power dissipation Ptot = f (TA) 10 4 mV V 10 2 10 3 VO 120 100 60 10 1 OHF00958 160 mW Ptot 140 10 2 ΙP 40 80 60 10 0 10 1 -1 0 40 20 20 10 0 400 500 600 700 800 900 nm 1100 λ Dark current IR = f (VR), E = 0 10 10 3 lx 10 4 EV 10 2 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080 4000 ΙR 10 1 10 0 C 0 20 40 60 80 ˚C 100 TA Dark current IR = f (TA), VR = 10 V, E = 0 OHF00081 100 pA 0 OHF00082 10 3 Ι R nA pF 80 10 2 3000 70 60 10 1 50 2000 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 ˚C 100 TA Directional characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 Semiconductor Group 0.4 0 20 40 60 80 5 100 120 1998-08-27