BCP49 NPN Silicon Darlington Transistors • For general AF applications • High collector current 4 3 • High current gain • Pb-free 2 1 (RoHS compliant) package 1) • Qualified according AEC Q101 C(2,4) B(1) E(3) EHA00009 Type Marking BCP49 BCP 49 Pin Configuration 1=B 2=C 3=E Package 4=C SOT223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 60 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 10 DC collector current IC 500 mA Peak collector current ICM 800 mA Base current IB 100 Peak base current IBM 200 Total power dissipation, T S = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS ≤17 K/W 1Pb-containing package may be available upon special request 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-27 BCP49 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 60 - - Collector-base breakdown voltage V(BR)CBO 80 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 10 - - ICBO - - 100 nA ICBO - - 10 µA IEBO - - 100 nA hFE 2000 - - DC current gain 1) hFE 4000 - - IC = 10 mA, VCE = 5 V DC current gain 1) hFE 10000 - - hFE 2000 - - DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) - IC = 100 µA, VCE = 1 V IC = 100 mA, V CE = 5 V DC current gain 1) IC = 500 mA, V CE = 5 V 1) Pulse test: t ≤ 300µs, D = 2% 2 2007-04-27 BCP49 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. VCEsat - - 1 VBEsat - - 1.5 fT - 200 - MHz Ccb - 6.5 - pF DC Characteristics Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤ 300µs, D = 2% 3 2007-04-27 BCP49 Total power dissipation Ptot = f(TS) Collector cutoff current ICBO = f (TA) VCB = VCEmax 10 4 1650 mW Ι CBO BCP 29/49 EHP00251 nA 1350 Ptot max 10 3 1200 1050 900 10 2 750 typ 600 450 10 1 300 150 0 0 10 0 15 30 45 60 75 90 105 120 °C 150 TS 0 50 100 Permissible pulse load VCE = 5V Ptotmax / PtotDC = f (tp) fT BCP 29/49 150 TA Transition frequency fT = f (IC) 10 3 ˚C EHP00252 10 3 BCP 29/49 Ptot max 5 Ptot DC MHz EHP00253 D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 2 5 10 1 5 10 1 10 0 10 1 10 2 mA 10 0 10 -6 10 3 ΙC 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2007-04-27 BCP49 DC current gain hFE = f (I C) Collector-emitter saturation voltage VCE = 5V IC = f (VCEsat), hFE = 1000 10 6 h FE BCP 29/49 EHP00255 10 3 5 ΙC 125 ˚C 10 5 BCP 29/49 EHP00256 mA 150 ˚C 25 ˚C -50 ˚C 10 2 25 ˚C 5 5 -55 ˚C 10 4 10 1 5 5 10 3 10 -1 10 0 10 0 10 2 mA 10 3 10 1 0 0.5 1.0 ΙC V V CEsat Collector-base capacitance Ccb = ƒ(VCB) Base-emitter saturation voltage Emitter-base capacitance Ceb = ƒ(VEB) IC = f (VBEsat), hFE = 1000 10 3 160 pF CCB0(CEB0) 1.5 ΙC BCP 29/49 EHP00258 mA 150 ˚C 25 ˚C -50 ˚C 120 10 2 100 5 80 60 CEB 10 1 40 5 CCB 20 0 0 10 0 4 8 12 16 20 24 28 V 34 0 1.0 2.0 V 3.0 V BEsat VCB0(VEB0 5 2007-04-27 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BCP49 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 6 2007-04-27 BCP49 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-27