Data Sheet No.PD60220 IPS031R FULLY PROTECTED POWER MOSFET SWITCH Product Summary Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS031R are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 14A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Rds(on) 60mΩ (max) V clamp 50V Ishutdown 14A Ton/Toff 1.5µs Package 3-Lead D-Pak Typical Connection Load R in series (if needed) D IN " control ! S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS031R Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Min. Max. Units Vds Maximum drain to source voltage — 47 Vin Maximum input voltage -0.3 7 V Iin, max Isd cont. Maximum IN current -10 +10 mA rth=100oC/W — 1.6 rth=5oC/W — rth=50oC/W — 3 — 18 Diode max. continuous current (1) Isd pulsed Diode max. pulsed current (1) Pd Test Conditions Maximum power dissipation(1) rth=50oC/W 18 — 2.5 rth=100oC/W — 1.25 ESD1 Electrostatic discharge voltage (Human Body) — 4 ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 T stor. Max. storage temperature -55 150 T j max. Max. junction temperature -40 +150 T lead Lead temperature (soldering, 10 seconds) — 300 Min. Typ. — — — 100 50 3 D-Pak Std footprint D-Pak with Rth=5oC/W A D-Pak with sq. footprint W C=100pF, R=1500Ω, C=200pF, R=0Ω, L=10µH kV o C Thermal Characteristics Symbol Parameter R th 1 R th 2 R th 3 Thermal resistance with standard footprint Thermal resistance with 1" square footprint Thermal resistance junction to case Max. Units Test Conditions — — — o C/W D-PAK Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vds (max) Continuous drain to source voltage VIH High level input voltage VIL Low level input voltage I ds Continuous drain current Tamb=85oC TAmbient = 85oC, IN = 5V, rth = 50oC/W, Tj = 125oC) 1" sq. footprint TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) Std. footprint Rin Recommended resistor in series with IN pin Tr-in(max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) — 4 0 35 6 0.5 — — 0.2 — 0 3.3 2 5 1 1 Units V A kΩ µS kHz (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Application. Notes. 2 www.irf.com IPS031R Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) Symbol Parameter R ds(on) R ds(on) I dss Min. Typ. ON state resistance Tj = 25oC ON state resistance Tj = 150oC Drain to source leakage current 20 — 0 45 75 0.5 Max. Units Test Conditions 60 100 25 Drain to source leakage current 0 5 50 Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current 47 50 7 1 25 50 52 53 8.1 1.6 90 130 56 60 9.5 2 200 250 @Tj=25oC I dss2 mΩ Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC µA Vcc = 40V, Tj = 25oC @Tj=25oC V clamp 1 V clamp 2 V in clamp V th Iin , -on Iin, -off V µA Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5Ω , Rinput = 50Ω, 100µs pulse,Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Ton Tr Trf T off Tf Qin 0.05 0.4 — 0.8 0.5 — 0.3 1 8 2 1.5 11 Min. Typ. — 10 1.5 2 — 165 14 2.3 10 400 Turn-on delay time Rise time Time to 130% final Rds(on) Turn-off delay time Fall time Total gate charge Typ. Max. Units Test Conditions 0.6 2 — 3.5 2.5 — See figure 2 µs See figure 2 nC Vin = 5V Protection Characteristics Symbol Parameter T sd I sd Vreset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) www.irf.com Max. Units Test Conditions — 18 3 40 — o C A V µs µJ See fig. 1 See fig. 1 Vin = 0V, Tj = 25oC Vcc = 14V 3 IPS031R Functional Block Diagram All values are typical DRAIN 47 V 200 kΩ 300 Ω IN 8.1 V S Q R Q I sense 80 µA T > 165°c I > 1sd SOURCE Lead Assignments 2 (D) 1 3 In D S D-Pak IPS031R 4 www.irf.com IPS031R Vin 5V 90 % 0V Vin 10 % Tr-in t < T reset Ids t > T reset I shutdown 90 % Isd Ids 10 % Td on Td off tf tr T T shutdown Tsd Vds (165 °c) Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp L Vin Rem : V load is negative during demagnetization V load + R 14 V - Ids Vin Vds clamp 5v 0v ( Vcc ) Vds D IN Vds S Ids ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com Figure 4 - Active clamp test circuit 5 IPS031R All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 100 200% 90 180% 80 160% 70 140% Tj = 150oC 120% 60 100% 50 40 80% o Tj = 25 C 30 60% 20 40% 10 20% 0 0 1 2 3 4 5 6 7 8 0% -50 -25 25 50 75 100 125 150 175 Figure 6 - Normalised Rds ON (%) Vs Tj (oC) Figure 5 - Rds ON (mΩ) Vs Input Voltage (V) 10 10 9 9 8 8 toff delay fall time 7 7 ton delay rise tim e 130% final rdson 6 5 4 6 5 4 3 3 2 2 1 1 0 0 0 1 2 3 4 5 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) 6 0 0 1 2 3 4 5 6 7 8 Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) www.irf.com IPS031R 100 100 delay off delay on rise tim e 130% rdson fall tim e 10 10 1 1 0 .1 0 .1 10 10 100 1000 100 1000 10000 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs IN Resistor (Ω) Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) 20 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 Isd 25°C 4 2 Ilim 25°C 2 0 0 1 2 3 4 5 6 7 Figure 11 - Current Iimitation & I shutdown (A) Vs Vin (V) www.irf.com 8 0 -50 -25 0 25 50 75 100 125 150 Figure 12 - I shutdown (A) Vs Temperature (oC) 7 IPS031R 100 - - - - Tj=25 °C _____Tj = 100 °C Free air / standard footprint 10 1 Figure 14 - Ids (A) Vs Protection Resp. Time (s) IPS031R Figure 13 - Max. I load current (A) Vs Tamb (oC) IPS031R 100 s ingle pulse m ax. curre nt 5 100 Hz rth=60°C/W dT=25°C 1kHz rth=60°C/W dT=25°C 5 100 10 10 1 0.1 1 0.1 0 .0 1 0.01 Vbat = 14 V Tjini = T sd 0 .1 1.E-05 1 10 Figure 15 - Iclamp (A) Vs Inductive Load (mH) 8 1.E-03 1.E-01 1.E+01 1.E+03 100 Fig.16 - Transient Thermal Impedance (oC/W) Vs Time (s) - IPS031R www.irf.com IPS031R 200 120% 180 115% 160 110% 140 120 105% 100 100% 80 95% 60 90% 40 Iin,on 20 Iin,off 85% 0 80% -50 -25 0 -50 -25 25 50 75 100 125 150 Figure 17 - Input current (µA) Vs Junction (oC) 16 14 Treset rise tim e 12 fall time Vds clamp @ Isd Vin clam p @ 10m A 0 25 50 75 100 125 150 Figure 18 - Vin clamp and V clamp2 (%) Vs Tj (oC) 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 Figure 19 - Turn-on, Turn-off, and treset (µs) Vs Tj (oC) www.irf.com 9 IPS031R Case Outline 3-Lead D-Pak 10 01-6031 00 01-0003 03 (JEDEC TO252AA) www.irf.com IPS031R Tape & Reel - D-PAK 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 This device was designed and qualified peer automotive level (Q101) Data and specifications subject to change without notice. 6/1/2004 www.irf.com 11