Previous Datasheet Index Next Data Sheet Bulletin I2117 25TTS..S SERIES SURFACE MOUNTABLE PHASE CONTROL SCR Description/Features The 25TTS..S new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. VT < 1.25V @ 16A ITSM = 250A VR/ VD = 1200V Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Output Current in Typical Applications Applications Single-phase Bridge Three-phase Bridge Units NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz (140µm) copper 3.5 5.5 Aluminum IMS, RthCA = 15°C/W 8.5 13.5 16.5 25.0 Aluminum IMS with heatsink, RthCA = 5°C/W TA = 55°C, T J = 125°C, footprint 300mm2 Major Ratings and Characteristics Characteristics 25TTS..S Units 16 A 25 A 800 and 1200 V 250 A 1.25 V dv/dt 500 V/µs di/dt 150 A/µs - 40 to 125 °C IT(AV) Sinusoidal waveform IRMS V RRM/ V DRM ITSM VT TJ @ 16 A, TJ = 25°C 1 To Order D2 PAK (SMD-220) A Previous Datasheet Index Next Data Sheet 25TTS.. S Series Voltage Ratings VRRM, maximum VDRM , maximum IRRM/IDRM Part Number peak reverse voltage V peak direct voltage V 125°C mA 25TTS08S 800 800 5 25TTS12S 1200 1200 Absolute Maximum Ratings Parameters 25TTS..S Units IT(AV) Max. Average On-state Current 16 A IRMS Max. RMS On-state Current 25 ITSM I2t Conditions 50% duty cycle @ TC = 94° C, sinusoidal wave form Max. Peak One Cycle Non-Repetitive 210 10ms Sine pulse, rated VRRM applied Surge Current 250 10ms Sine pulse, no voltage reapplied Max. I 2t for fusing 220 A2s 310 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied I2√t Max. I 2√t for fusing 3100 A2√s VTM Max. On-state Voltage Drop 1.25 V rt On-state slope resistance 12.0 mΩ VT(TO) Threshold Voltage 1.0 V IRM/I DM Max.Reverse and Direct 0.5 mA Leakage Current 5.0 IH Max. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial IT=1A IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load dv/dt Max. rate of rise of off-state Voltage 500 V/µs di/dt 150 A/µs Max. rate of rise of turned-on Current t = 0.1 to 10ms, no voltage reapplied @ 16A, TJ = 25°C TJ = 125°C TJ = 25 °C TJ = 125 °C 2 To Order VR = rated V RRM/ VDRM Previous Datasheet Index Next Data Sheet 25TTS.. S Series Triggering Parameters Conditions 25TTS..S Units PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 60 mA to trigger 45 Anode supply = 6V, resistive load, T J = 25°C 20 Anode supply = 6V, resistive load, TJ = 125°C VGT V Anode supply = 6V, resistive load, TJ = - 10°C Max. required DC Gate Voltage 2.5 to trigger 2.0 Anode supply = 6V, resistive load, T J = 25°C 1.0 Anode supply = 6V, resistive load, TJ = 125°C T J = 125°C, VDRM = rated value VGD Max. DC Gate Voltage not to trigger 0.25 IGD Max. DC Gate Current not to trigger 2.0 mA 25TTS..S Units 0.9 µs Anode supply = 6V, resistive load, TJ = - 10°C T J = 125°C, VDRM = rated value Switching Parameters tgt Typical turn-on time t rr Typical reverse recovery time tq Typical turn-off time 4 Conditions TJ = 25°C TJ = 125°C 110 Thermal-Mechanical Specifications Parameters 25TTS..S Units TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 °C 240 °C 1.1 °C/W 40 °C/W 2 (0.07) g (oz.) Soldering Temperature RthJC Max. Thermal Resistance Junction to Case RthJA Typ. Thermal Resistance Junction Conditions for 10 seconds (1.6mm from case) DC operation to Ambient (PCB Mount)** wt T Approximate Weight Case Style 2 D Pak (SMD-220) **When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W For recommended footprint and soldering techniques refer to application note #AN-994 3 To Order Previous Datasheet Index Next Data Sheet Maximum Allowable Case Temperature (°C) 125 25TTS.. Series R t hJ C (DC) = 1.1 K/W 120 115 C on d uction An g le 110 105 30° 60° 100 90° 95 90 120° 0 2 4 6 8 10 12 180° 14 16 18 25TTS.. Series R thJC(DC) = 1.1 K/W 120 115 110 Conduction Period 105 30° 100 95 90° 120° 90 85 0 5 15 20 DC 25 30 Fig. 2 - Current Rating Characteristics 180° 120° 90° 60° 30° 20 15 RMS Limit Conduction Angle 10 25TTS.. T = 125°C 5 J 0 5 10 15 20 35 DC 180° 120° 90° 60° 30° 30 25 20 15 RMS Limit Conduction Period 10 25TTS.. T = 125°C 5 0 J 0 Average On-state Current (A) At Any Rated Load Condition And With Rated V Applied Following Surge. RRM 210 Initial T = 125°C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 190 170 150 130 110 25TTS..Series 1 10 10 15 20 25 30 Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave Forward Current (A) 230 5 Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 10 180° Fig. 1 - Current Rating Characteristics 25 90 60° Average On-state Current (A) 30 0 125 Average On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 25TTS.. S Series 100 Number Of Eq ua l Amplitude Ha lf Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current 4 To Order 270 250 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied Rated V Reapplied 230 210 RRM 190 170 150 130 110 90 70 0.01 25TTS.. Series 0.1 1 10 Pulse Train Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Previous Datasheet Index Next Data Sheet 25TTS.. S Series Instantaneous On-state Current (A) 1000 100 T = 25°C 10 J T J= 125°C 25TTS.. Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) (2) (3) (4) (b) VGD IGD 0.1 0.001 (4) (3) (2) (1) Frequency Limited by PG(AV) 25TTS.. 0.01 PGM = 40 , tp = 1 ms PGM = 20 W, tp = 2 ms PGM = 8 W, tp = 5 ms PGM = 4 W, tp = 10 ms (a) TJ = -10 °C T J = 1 25 °C 1 TJ = 25 °C Instan taneous Gate Voltage (V) 100 0.1 1 10 10 0 Instantaneous Gate Curren t (A) Transient Thermal Impedance Z thJC (K/W) Fig. 8 - Gate Characteristics 10 1 Steady State Value (DC Operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 25TTS.. Series 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics 5 To Order 1 Previous Datasheet Index Next Data Sheet 25TTS.. S Series Marking Information EXAMPLE: THIS IS AN 25TTS12S (A) INTERNATIONAL PART NUMBER RECTIFIER LOGO 25TTS12S 9G3A 9512 ASSEMBLY DATE CODE (YYWW) LOT CODE (K) (G) YY = YEAR WW = WEEK Tape & Reel Information TRR 1.60 (0. 063) 1.50 (0. 059) 1.60 (0.063) 4.10 ( 0.161) 3.90 ( 0.153) 1.50 (0.059) DIA. 0.368 (0.0145) 0.342 (0.0135) FEED DIR ECTION 1.85 (0.073) 11 .60 (0.457) 11 .40 (0.449) 1.65 (0.065) 15 .42 (0.609) 15 .22 (0.601) TRL 1.75 (0.069) 10 .90 (0.429) 10 .70 (0.421) 1.25 (0.049) 24.30 (0 .95 7) 23.90 (0 .94 1) DIA. 16 .10 (0.634) 4.72 (0.186) 4.52 (0.178) 15 .90 (0.626) FEED DIRECTION Dimensions in millimeters and inches 13.50 ( 0.5 32) 12.80 ( 0.5 04) DIA. 26 .40 (1.039) 24 .40 (0.961) 60 (2.362) 360 (14.173) D IA . M IN. DIA. M AX. 6 To Order SMD-220 Tape & Reel When ordering, indic ate th e part number, part orie ntation, and the quantity. Qu antitie s are in multiples of 800 pieces p er reel fo r both TRL and T RR. Previous Datasheet Index Next Data Sheet 25TTS.. S Series Outline Table 4.69 (0.18) 4.20 (0.16) 10.16 (0.40) REF. 1.32 (0.05) 1.22 (0.05) 6.47 (0.25) 15.49 (0.61) 93° 6.18 (0.24) 14.73 (0.58) 2.61 (0.10) 5.28 (0.21) 2.32 (0.09) 4.78 (0.19) 0.55 (0.02) 0.46 (0.02) 8.89 (0.35) 3X REF. 1.40 (0.055) 1.14 (0.045) 2X (K) (G) 1 3 1 (K) Cathode 2 (A) Anode 3 (G) Gate 0.93 (0.37) MINIMUM RECOMMENDED F OOTPRIN T 0.69 (0.27) 11.43 (0.45) 4.57 (0.18) 8.89 (0.35) 4.32 (0.17) 17.78 (0.70) 2 0.61 (0.02) MAX. (A) 5.08 (0.20) REF. 3.81 (0.15) 2.08 (0.08) 2X Dimensions in millimeters and inches 2.54 (0.10) 2X Ordering Information Table Device Code 25 T T S 12 S 1 2 3 4 5 6 1 - Current Rating, RMS value 2 - Circuit Configuration TRL 1 (K) (G) 3 T = Single Thyristor 3 - Package T = TO-220AC 4 - 2 (A) Type of Silicon S = Converter Grade 08 = 800V 5 - Voltage code: Code x 100 = VRRM 6 - S = TO-220 D2Pak (SMD 220) Version 7 - Tape and Reel Option 12 = 1200V TRL = Left Reel TRR = Right Orientation Reel 7 To Order