PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS ® FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. PTF180101M Package PG-RFP-10 Features EDGE Performance VDD = 28v, I DQ = 180 mA, ƒ = 1960 MHz Typical EDGE performance - Average output power = 4.0 W - Gain = 17 dB - Efficiency = 31% - EVM = 1.3 % • Typical CW performance - Output Power at P–1dB = 10 W - Gain = 16 dB - Efficiency = 50% • Integrated ESD protection: Human Body Model Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power • Pb-free and RoHS compliant 40 1.25 30 1.00 20 Efficiency 0.75 10 Drain Efficiency (%) . EVM RMS (Average %) 1.50 • EVM 0.50 0 29 30 31 32 33 34 35 36 37 Output Power (dBm) RF Characteristics Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 — — dB Drain Efficiency ηD 35 — — % Intermodulation Distortion IMD — — –28 dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 05, 2005-12-06 PTF180101M DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 A RDS(on) — 0.83 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 150 °C Total Device Dissipation PD 18.8 W 0.15 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 10 W DC ) RθJC 6.5 °C/W Ordering Information Type Package Outline Package Description Marking PTF180101M PG-RFP-10 Molded plastic, SMD 0181 *See Infineon distributor for future availability. Data Sheet 2 of 8 Rev. 05, 2005-12-06 PTF180101M CW Performance Two-Tone Performance VDD = 28 V, I DQ = 180 mA, ƒ = 1960 MHz VDD = 28 V, I DQ = 180 mA, ƒ = 1960/1961 MHz 19 50 18 40 Gain -20 -30 16 20 15 10 -80 0 -90 15 20 25 30 35 40 5th order 40 -60 7th order 30 -70 Efficiency 20 10 0 25 45 30 40 45 P–1dB Broadband Performance EDGE Performance VDD = 28 V, I DQ = 180 mA VDD = 28 V, I DQ = 180 mA, ƒ = 1960 MHz 20 Offset f = 200 kHz 60 Gain 10 Efficiency 5 50 0 -5 -10 Input Return Loss -15 40 Modulation Spectrum (dBc) -30 15 Drain Efficiency (%). Gain & Return Loss (dB) 35 Output Power (dBm), PEP Power Output (dBm) -20 -25 1920 1940 1960 1980 30 2000 -35 -40 -45 -50 -55 Offset ƒ = 400 kHz -60 -65 Offset ƒ = 600 kHz -70 -75 29 Frequency (MHz) Data Sheet 50 -50 30 14 60 -40 17 Efficiency 70 3rd order Drain Efficiency (%) 60 IMD (dBc) 20 Drain Efficiency (%) Gain (dB) Typical Performance (data taken in production test fixture) 30 31 32 33 34 35 36 37 Output Power (dBm) 3 of 8 Rev. 05, 2005-12-06 PTF180101M Typical Performance (cont.) Gate-Source Voltage vs. Temperature Normalized Bias Voltage Voltage normalized to typical gate voltage, series show current. 1.04 0.05 1.03 0.28 0.51 1.02 0.74 1.01 0.97 1.00 1.2 0.99 0.98 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (ºC) WA Broadband Circuit Impedance Z Source Z0 = 50 Ω 0. 1 D Z Load G R jX R jX 1900 0.80 -3.71 2.89 -1.38 1910 0.79 -3.66 2.88 -1.30 1920 0.79 -3.61 2.87 -1.21 1930 0.78 -3.56 2.85 -1.13 1940 0.77 -3.51 2.84 -1.05 1950 0.77 -3.47 2.82 -0.97 1960 0.76 -3.42 2.81 -0.89 1970 0.75 -3.37 2.80 -0.81 1980 0.75 -3.33 2.78 -0.73 1990 0.74 -3.28 2.77 -0.65 2000 0.74 -3.24 2.76 -0.57 Data Sheet 4 of 8 0.1 1900 MHz Z Source 2000 MHz 1900 MHz 0. 1 A MHz 2000 MHz W <--- Z Load Ω DT OW ARD L OA GT HS N E L VE Z Source Ω Frequency 0 .0 Z Load S 0. 2 Rev. 05, 2005-12-06 PTF180101M Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 V DD Q1 B C P56 C2 0.001µF R3 2KV C3 0.001µF R4 2KV R5 10V + C4 10µF 35V R9 1V R6 10V L1 C5 0.1µF C6 + 10pF R7 1K V C7 10µF 35V C8 10pF C13 10pF l7 + C14 10µF 50V C15 10pF C16 0.1µF + VDD C17 10µF 50V R8 220V l 10 l6 C12 4.7pF C10 10pF RF_IN l1 l2 C9 0.9pF l3 C18 10pF DUT l4 l5 W1 ½ TURN l8 l9 l 11 RF_OUT C11 4.7pF 180101m_sch Reference circuit schematic for ƒ = 1990 MHz Circuit Assembly Information DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 PTF180101M 0.76 mm [.030"] thick, εr = 4.5 Electrical Characteristics at 1990 MHz 1 0.059 0.093 0.016 0.129 0.026 0.153 0.194 0.014 0.236 0.187 0.077 LDMOS Transistor Rogers RO4320 2 oz. copper Dimensions: L x W (mm) Dimensions: L x W (in.) λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 9.6 Ω λ, 9.6 Ω λ, 78.0 Ω λ, 78.0 Ω λ, 12.9 Ω λ, 12.9 Ω λ, 66.0 Ω λ, 50.0 Ω 5.69 x 1.60 8.48 x 1.60 1.09 x 1.60 10.77 x 14.22 2.13 x 14.22 14.48 x 0.71 18.39 x 0.71 1.27 x 10.16 19.91 x 10.16 17.40 x 0.99 6.99 x 1.60 0.224 0.334 0.043 0.424 0.084 0.570 0.724 0.050 0.784 0.685 0.275 x x x x x x x x x x x 0.063 0.063 0.063 0.560 0.560 0.028 0.028 0.400 0.400 0.039 0.063 1Electrical characteristics are rounded. Data Sheet 5 of 8 Rev. 05, 2005-12-06 PTF180101M Reference Circuit (cont.) R5 R3 C3 R1 C6 10 35V C8 C7 SHIM QQ1 C2 Q1 + R6 R7 10 35V LM + C4 C1 R4 C5 SHIM R9 C13 C17 R2 C15 C16 R8 C10 RF_IN C9 C14 VDD L1 C12 C18 C11 RF_OUT W1 180101M_C_01 180101m_assy Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4, C7 C5, C16 C6, C8, C10, C13, C15, C18 C9 C11, C12 C14, C17 L1 Q1 QQ1 R1 R2 R3 R4 R5, R6 R7 R8 W1 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1µF Ceramic capacitor, 10 pF Digi-Key Digi-Key Digi-Key ATC PCC1772CT-ND PCS6106TR-ND PCC104BCT-ND 100B 100 Ceramic capacitor, 0.9 pF Ceramic capacitor, 4.7pF Tantalum capacitor, 10 µF, 50 V Ferrite, 4mm Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 2 k-ohms Potentiometer 2 k-ohms Chip Resistor 10 ohms Chip Resistor 1 k-ohms Chip Resistor 220 ohms Wire 0.250” ATC ATC Digi-Key Elna Magnetics Infinion Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key N/A 100B 0R9 100B 4R7 TPSE106K050R0400 BDS3/3/4.6-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND P221ECT-ND AUG22, SOLID *Gerber Files for this circuit available on request Data Sheet 6 of 8 Rev. 05, 2005-12-06 PTF180101M Package Outline Specifications 0.1 A A 0.22 ±0.05 0.09 0.5 0.08 M C 6° MAX. 3 ±0.1 H +0.08 0.125–0 .05 1.1 MAX. 0.85 ±0.1 0.15 MAX. Package PG-RFP-10 (TSSOP-10 Outline) +0.15 0.42 –0.10 A B C 4.9 0.25 M A B C PG-RFP-10 10 6 1 5 3 ±0.1 B Index marking Notes: Unless otherwise specified 1. Dimensions are mm 2. Lead thickness: 0.09 3. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 7 of 8 Rev. 05, 2005-12-06 PTF180101M Confidential—Limited Distribution Revision History: 2005-12-06 2005-11-14, Preliminary Data Sheet Previous version: Page all Data Sheet Subjects (major changes since last revision) Remove Preliminary designation We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS ® is a registered trademark of Infineon Technologies AG. Edition 2005-12-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 05, 2005-12-06