PTF040551E PTF040551F Thermally Enhanced High Power RF LDMOS FETs 55 W, 450 – 500 MHz Description The PTF040551E and PTF040551F are thermally-enhanced, 55-watt, internally matched GOLDMOS ® FETs intended for CDMA applications in the 450 to 500 MHz band. Full gold metallization ensures excellent device lifetime and reliability. PTF040551E Package 30265 PTF040551F* Package 31265 Features IS-95 CDMA Performance 30 -20 Efficiency Drain Efficiency (%) 25 -30 20 -40 ACP FC – 0.75 MHz 15 -50 10 -60 ACPR FC + 1.98 MHz 5 -70 0 -80 27 29 31 33 35 37 39 Adj. Channel Power Ratio (dBc) VDD = 28 V, IDQ = 450 mA, f = 470 MHz • Thermally-enhanced packages • Broadband internal matching • Typical CW performance - Output power at P–1dB = 65 W - Gain = 20 dB - Efficiency = 57% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 5:1 VSWR @ 28 V, 55 W (CW) output power 41 Output Power, Avg. (dBm) RF Characteristics CDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, P OUT = 10 W, f = 470 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 20 — dB Drain Efficiency ηD — 25 — % ACPR — –45 — dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 03, 2005-08-22 PTF040551E PTF040551F RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 55 W PEP, f = 470 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 19.0 20 — dB Drain Efficiency ηD 41 44 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.1 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.5 3.0 4 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 159 W 0.91 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 1.1 °C/W Ordering Information Type Package Outline Package Description Marking PTF040551E 30265 Thermally-enhanced slotted flange, single-ended PTF040551E PTF040551F* 31265 Thermally-enhanced earless flange, single-ended PTF040551F *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 03, 2005-08-22 PTF040551E PTF040551F Typical Performance (data taken in a production test fixture) IM3 vs. Output Power at Selected Biases Output Power, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, f1 = 469, f2 = 470 MHz VDD = 28 V, IDQ = 450 mA 65 60 Gain (dB) 22 21 55 Gain Output Power 20 19 450 455 460 50 -25 -35 450 mA -40 -45 560 mA -50 45 470 465 337 mA -30 IMD (dBc) Efficiency -20 Efficiency (%), POUT (dBm) 23 -55 36 38 Frequency (MHz) 42 44 Broadband Performance Power Sweep VDD = 28 V, IDQ = 450 mA, POUT Avg. = 44.39 dBm VDD = 28 V, f = 470 MHz 5 22.0 40 0 21.5 30 -5 -10 Return Loss (dB) Gain 20 Power Gain (dB) Efficiency 450 455 460 465 470 IDQ = 450 mA -20 475 19.5 IDQ = 337 mA 37 39 41 43 45 47 49 Output Power (dBm) Frequency (MHz) Data Sheet 20.5 20.0 Return Loss IDQ = 560 mA 21.0 -15 10 0 445 46 Output Power, Avg. (dBm) 50 Gain (dB), Efficiency (%) 40 3 of 10 Rev. 03, 2005-08-22 PTF040551E PTF040551F Typical Performance (cont.) Output Power (at 1 dB compression) vs. Supply Voltage Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 450 mA, f = 470 MHz IDQ = 450 mA, f = 470 MHz 23 60 50 20 40 19 30 Efficiency 18 20 17 10 35 37 39 41 43 45 47 49 48 47 46 51 24 26 28 30 32 Output Power (dBm) Supply Voltage (V) Intermodulation Distortion vs. Output Power Three-Carrier CDMA2000 Performance (as measured in a broadband circuit) VDD = 28 V, IDQ = 450 mA, f1 = 469 MHz, f2 = 470 MHz VDD = 28 V, IDQ = 450 mA, f = 470 MHz 30 0 -10 -35 Efficiency 25 Drain Efficiency (%) 3rd Order -20 IMD (dBc) 49 -30 5th -40 -50 -60 -40 20 -45 15 -50 ACP Low 10 -55 5 -60 Alt Up ACP Up 7th 0 -70 36 38 40 42 44 29 31 33 35 37 39 41 Output Power, PEP (dBm) Output Power, PEP (dBm) Data Sheet -65 27 46 Adj. Ch. Power Ratio (dBc) 21 Output Power (dBm) Gain Drain Efficiency (%) 22 Gain (dB) 50 70 4 of 10 Rev. 03, 2005-08-22 PTF040551E PTF040551F Typical Performance (cont.) Gate-Source Voltage vs. Temperature Normalized Bias Voltage Voltage normalized to typical gate voltage, series show current. 1.03 0.30 A 1.02 1.10 A 2.00 A 1.01 2.85 A 1.00 3.75 A 0.99 4.50 A 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100 Case Temperature (ºC) Broadband Circuit Impedance RA T OR 0 GE N E D Z Load OW A R D Z Source Z0 = 50 Ω 0 .1 G R jX R jX 450 5.58 –8.24 2.88 1.23 455 5.46 –7.96 2.90 1.42 460 5.36 –7.70 2.91 1.63 465 5.29 –7.44 2.90 1.86 470 5.27 –7.22 2.89 2.10 0.1 0 .0 W <--- MHz A VE Z Load Ω W ARD L OA D T HS T O L E NG Z Source Ω Frequency 470 MHz 450 MHz 0.1 0.2 Z Load S Z Source 470 MHz 450 MHz 0. 2 Data Sheet 5 of 10 Rev. 03, 2005-08-22 PTF040551E PTF040551F Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2KV C3 0.001µF R4 2K V R5 5.1KV C4 10µF 35V L1 R6 10V C5 0.1µF C11 100pF l8 R7 5.1KV C6 0.1µF 50V C7 .01µF C12 1µF VDD + C13 10µF 50V C14 0.1µF C15 10µF 50V C8 100pF l7 l4 l1 l2 C23 100pF DUT l3 l12 l5 l13 l14 l15 l 16 l17 RF_OUT C22 15pF l9 C16 2.2pF l10 04 0551 ef _sch RF_IN C10 2.2pF l6 R8 10V C9 100pF l11 L2 C17 100pF C18 1µF + C19 10µF 50V C20 0.1µF C21 10µF 50V Reference Circuit Schematic for f = 460 MHz Circuit Assembly Information DUT PCB PTF040551E or PTF040551F 0.76 mm [.030"] thick, εr = 10 LDMOS Transistor Rogers TMM10 2 oz. copper Microstrip Electrical Characteristics at 460 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2, l16 l3 l4 l5 l6, l9 l7, l10 l8, l11 l12 l13 l14 l15 l17 0.010 λ, 50.0 Ω 0.005 λ, 30.0 Ω 0.081 λ, 25.0 Ω 0.143 λ, 53.6 Ω 0.112 λ, 10.2 Ω 0.015 λ, 38.0 Ω 0.166 λ, 38.0 Ω 0.030 λ, 8.6 Ω 0.004 λ, 10.2 Ω 0.143 λ, 10.2 Ω 0.044 λ, 24.0 Ω 0.007 λ, 24.0 Ω 0.010 λ, 50.0 Ω 2.54 x 0.69 1.14 x 1.78 19.18 x 2.34 37.08 x 0.58 25.27 x 7.47 3.81 x 1.17 41.05 x 1.17 6.60 x 9.07 0.76 x 7.47 32.13 x 7.47 10.36 x 2.44 1.73 x 2.44 2.54 x 0.69 0.100 0.045 0.755 1.460 0.995 0.150 1.616 0.135 0.036 1.265 0.408 0.068 0.100 x x x x x x x x x x x x x 0.027 0.070 0.092 0.023 0.294 0.046 0.046 0.357 0.294 0.294 0.096 0.096 0.027 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 03, 2005-08-22 PTF040551E PTF040551F Reference Circuit (cont.) C15 R5 R4 R3 C3 C1 LM + 10 35V C4 R2 C5 C13 V DD VDD QQ1 L1 C2 Q1 C8 C7 R6 R7 C6 C11 R1 C10 C22 R8 RF_IN C14 C12 RF_OUT C9 C23 C16 C17 C18 C20 V DD C19 L2 C21 040551in_01 040551out_01 040551ef _assy Reference Circuit Assembly (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C6, C14, C20 C7 C8, C9, C11, C17, C23 C10, C16 C12, C18 C13, C15, C19, C21 C22 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 0.01 µF Ceramic capacitor, 100 pF Digi-Key Digi-Key Digi-Key ATC ATC PCC1772CT-ND PCS6106TR-ND PCC104BCT-ND 200B 103 100B 101 Ceramic capacitor, 2.2 pF Capacitor, 1.0 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 15 pF Ferrite, 6 mm Transistor Voltage regulator Chip resistor, 1.2 k-ohms Chip resistor, 1.3 k-ohms Chip resistor, 2 k-ohms Potentiometer, 2 k-ohms Chip resistor, 5.1 k-ohms Chip resistor, 10 ohms ATC ATC Garrett Electronics ATC Ferroxcube Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 2R2 920C105 TPS106K050R0400 100B 150 53/3/4.6-452 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 03, 2005-08-22 PTF040551E PTF040551F Package Outline Specifications Package 30265 7.11 [.280] (45° X 2.03 [.080]) CL D S 2X 2.59±0.38 [.107 ±.015] CL FLANGE 9.78 [.385] 15.60±0.51 [.614±.020] LID 10.16±0.25 [.400±.010] G 2X R1.60 [.063] 2x 7.11 [.280] 4x 1.52 [.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.48±0.38 [.137±.015] 0.0381 [.0015] -A- 20.31 [.800] 1.02 [.040] H-30265-2-1-2303 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 of 10 Rev. 03, 2005-08-22 PTF040551E PTF040551F Package Outline Specifications (cont.) Package 31265 (45° X 2.03 [.080]) 2X 2.59±0.51 [.102±.020] D LID 10.16±0.25 [.400±.010] FLANGE 10.16 [.400] 15.49±.51 [.610±.020] 10.16 [.400] G R1.27 [R.050] 4X R0.63 [R.025] MAX 2X 7.11 [.280] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 0 . 0 2 5 [. 0 0 1 ] -A- 3.56±.38 [.140±.015] S 10.16 [.400] 1.02 [.040] 265-cases_31265 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 10 Rev. 03, 2005-08-22 PTF040551EF Confidential, Limited Internal Revision History: 2005-08-22 2005-04-15, Preliminary Data Sheet Previous Version: Page Subjects (major changes since last revision) 3–7 8–9 Add tables, graphs, impedance and circuit information Add and update package information all Remove Preliminary designation Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS ® is a registered trademark of Infineon Technologies AG. Edition 2005-08-22 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non–infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life–support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life–support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03, 2005-08-22