PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. • Broadband internal matching • Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% • Typical CW performance - Output power at P–1dB = 60 W - Gain = 17 dB - Efficiency = 60% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz 55 Efficiency 50 -20 45 -30 40 -40 35 400 kHz -50 -60 30 600 kHz 25 -70 20 -80 15 -90 Drain Efficiency (%) Modulation Spectrum (dB) 0 -10 10 36 38 40 42 44 46 48 50 PTF080451E Package 30265 Output Power (dBm) ESD: Electrostatic discharge sensitive device—observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, P OUT = 22.5 W, f = 959.8 MHz Characteristic Symbol Error Vector Magnitude Min Typ Max Units EVM (RMS) — 2.0 — % Modulation Spectrum @ 400 kHz ACPR — –62 — dBc Modulation Spectrum @ 600 kHz ACPR — –76 — dBc Gain Gps — 18 — dB Drain Efficiency ηD — 40 — % Symbol Min Typ Max Units Gain Gps 17 18 — dB Drain Efficiency ηD 40 42 — % Intermodulation Distortion IMD — –32 –30 dBc Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Data Sheet 1 of 9 2004-06-24 PTF080451 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.1 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.5 3.2 4 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 184 W 1.05 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 0.95 °C/W Modulation Spectrum EDGE EVM Performance P OUT = 20 W, f = 959.8 MHz V DD = 28 V, IDQ = 450 mA, f = 959.8 MHz 1.7 -20 9 90 -30 8 80 7 70 6 60 5 50 4 40 -40 1.5 400 KHz -50 1.3 -60 1.1 -70 0.9 -80 600 KHz 0.7 0.5 0.25 -90 0.35 0.45 0.55 0.65 EVM RMS (average %) . 1.9 EVM Modulation Spectrum (dBc) EVM RMS (average %) . 2.1 -100 0.75 3 30 Efficiency 2 20 EVM 1 Drain Efficiency (%) Typical Performance (measurements taken in production test fixture) 10 0 0 32 34 36 38 40 42 44 46 48 Output Power (dBm) Quiescent Current (A) All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 2 of 9 2004-06-24 PTF080451 Typical Performance (cont.) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 450 mA 18 -10 3rd Order -20 Gain 17 -30 5th -40 7th Gain (dB) IMD (dBc) 80 -50 70 Efficiency 16 60 Output Pow er 15 -60 50 -70 14 860 -80 36 38 40 42 44 46 48 880 920 940 40 960 Frequency (MHz) Output Power (dBm), PEP IM3 vs. Output Power at Selected Biases Broadband Performance VDD = 28 V, f1 = 959, f2 = 960 MHz VDD = 28 V, IDQ = 450 mA, POUT = 22.5 W -20 Gain (dB), Efficiency (%) -25 -30 IMD (dBc) 900 350 mA -35 -40 450 mA -45 -50 550 mA -55 38 60 0 50 -4 Efficiency 40 -8 Return Loss 30 -12 20 -16 Gain 10 860 -60 36 Efficiency (%), POUT (dBm) 0 Return Loss (dB) VDD (as measured in a broadband circuit) = 28 V, IDQ = 450 mA, f1 = 959 MHz, f2 = 960 MHz 40 42 44 46 880 900 920 940 -20 960 Frequency (MHz) Output Power (dBm), PEP All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 3 of 9 2004-06-24 PTF080451 Power Sweep Gain & Efficiency vs. Output Power VDD = 28 V, f = 960 MHz V DD = 28 V, IDQ = 450 mA, f = 960 MHz 19.5 21 70 19.0 20 60 18.5 19 Gain (dB) Power Gain (dB) IDQ = 560 mA 18.0 IDQ = 450 mA 17.5 IDQ = 340 mA Gain 18 40 17 30 16 17.0 50 20 Efficiency 15 16.5 10 14 30 34 38 42 46 50 Drain Efficiency (%) Typical Performance (cont.) 0 30 Output Power (dBm) 35 40 45 50 Output Power (dBm) Output Power (at 1 dB Compression) vs. Supply Voltage IS-95 CDMA Performance VDD = 28 V, IDQ = 450 mA, f = 880 MHz IDQ = 450 mA, f = 960 MHz 48 49.0 Drain Efficiency (%) Output Power (dBm) -40 ACP FC – 0.75 MHz 48.5 48.0 47.5 47.0 40 -50 32 -55 Efficiency 24 -60 16 -65 ACPR FC + 1.98 MHz 8 46.5 -45 -70 -75 0 24 26 28 30 32 36 Supply Voltage (V) Adj. Ch. Power Ratio (dBc) 56 49.5 38 40 42 Output Power (dBm), Avg. All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 4 of 9 2004-06-24 PTF080451 Typical Performance (cont.) Three-Carrier CDMA 2000 Performance Bias Voltage vs. Temperature VDD = 28 V, IDQ = 450 mA, f = 880 MHz Voltage normalized to typical gate voltage. Series show current. 55 -41 1.03 0.75 A 1.02 1.50 A -44 ALT Up 45 40 -47 -50 ACP Low 35 -53 30 -56 Efficiency 25 -59 20 -62 15 Normalized Bias Voltage Drain Efficiency (%) 50 Adj. Ch. Power Ratio (dBc) ACP Up 37 38 39 40 41 42 43 44 45 3.00 A 1.00 3.75 A 4.50 A 0.99 0.98 0.97 0.96 -20 -65 36 2.25 A 1.01 0 20 40 60 80 100 Case Temperature (ºC) Output Power (dBm), PEP Broadband Circuit Impedance RA T OR ---> Z0 = 50 Ω R jX R jX 860 8.20 -1.70 3.00 0.70 920 8.30 -0.12 3.10 1.60 940 8.40 0.38 3.10 1.90 960 8.50 0.85 3.20 2.20 980 8.70 1.40 3.20 2.40 0.3 0.2 0.1 0 .0 980 MHz 860 MHz 0.1 AV MHz 860 MHz Z Source W <--- Z Load Ω D- Z Source Ω Frequency Z Load 980 MHz D L OA S TOW AR S GT H EL EN - W AV ELE NGT H S T OW A RD GEN E G 0 .1 Z Load 0.2 D Z Source All published data at TCASE = 25°C unless otherwise indicated. Data Sheet 5 of 9 2004-06-24 PTF080451 Test Circuit VDD C14 .01µF QQ1 C16 .01µF LM7805 C15 .01µF R6 1.0kV R5 1.3kV R3 10V R4 2kV R1 10V +C1 10µF 35V C2 0.1µF 50V L1 R2 1kV C3 33pF Q1 BCP56 C6 33pF l4 l1 DUT l2 l3 +C8 10µF 35V + C10 10µF 35V C9 0.1µF 50V VDD l7 C4 33pF RF_IN C7 1µF l5 C13 33pF l6 C5 5.1pF l8 C11 1.2pF l9 RF_OUT C12 1.0pF 0 8 0 4 5 1 _ sch Test Circuit Schematic for 960 MHz Circuit Assembly Information DUT PCB PTF080451 0.76 mm. [.030”] thick, Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 Electrical Characteristics at 960 MHz 0.075 λ, 50.770 Ω 0.114 λ, 50.770 Ω 0.050 λ, 50.770 Ω 0.289 λ, 73.660 Ω 0.060 λ, 9.350 Ω 0.199 λ, 9.190 Ω 0.132 λ, 52.470 Ω 0.134 λ, 38.020 Ω 0.029 λ, 50.200 Ω Data Sheet εr = 4.5 LDMOS Transistor 2 oz. copper Rogers TMM4 Dimensions: L x W (mm.) 0.505 x 0.053 0.765 x 0.053 0.335 x 0.053 2.000 x 0.025 0.360 x 0.506 1.200 x 0.510 0.890 x 0.050 0.880 x 0.085 0.195 x 0.054 Dimensions: L x W (in.) 12.83 x 1.35 19.43 x 1.35 8.51 x 1.35 50.80 x 0.64 9.14 x 12.85 30.48 x 12.95 22.61 x 1.27 22.35 x 2.16 4.95 x 1.37 6 of 9 2004-06-24 PTF080451 Test Circuit (cont.) R3 1 00 QQ1 10 2 10 35V C3 R6 L1 C6 C7 35V 1 00 LM + 10 C2 C15 R1 R2 R5 + C14 C16 R4 + C1 10 35V C10 Q1 C8 C9 C12 C13 C4 C5 C11 080451out_01 080451in_01 080451_assy Reference Circuit1 (not to scale) Component C1, C8, C10 C2, C9 C3, C4, C6, C13 C5 C7 C11 C12 C14, C15, C16 L1 Q1 QQ1 R1, R3 R2 R4 R5 R6 Description Capacitor, 10 µF, 35 V, Tant TE Series SMD Capacitor, 0.1 µF, 50 V Capacitor, 33 pF Capacitor, 5.1 pF Capacitor, 1 µF, 50 V Capacitor, 1.2 pF Capacitor, 1.0 pF Capacitor, .01 µF Ferrite, 6 mm Transistor Voltage Regulator Resistor, 10 ohm Resistor, 1.0 k-ohm Resistor, Variable 2 k-ohm, 4 W Resistor, 1.3 k-ohm 1/10 W, 0603 Resistor, 1.0 k-ohm 1/10 W, 0603 Manufacturer Digi-Key Digi-Key ATC ATC Digi-Key ATC ATC Digi-Key Philips Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCS6106TR-ND P4525-ND 100B 330 100B 5R1 19528-ND 100B 1R2 100B 1R0 PCC1772CT-ND 53/3/4.6-452 BCP56 LM7805 100ECT-ND 1KQBK 3224 W-202ETR-ND P1.3KGCT-ND P1.0KGCT-ND 1Gerber files for this circuit are available on request. Data Sheet 7 of 9 2004-06-24 PTF080451 Ordering Information Type Package Outline Package Description Marking PTF080451E 30265 Thermally enhanced, flange mount PTF080451E Package Outline Specifications Package 30265 7.11 [.280] (45° X 2.03 [.080]) CL D S 2X 2.59±0.38 [.107 ±.015] CL FLANGE 9.78 [.385] 15.60±0.51 [.614±.020] LID 10.16±0.25 [.400±.010] G 2X R1.60 [.063] 2x 7.11 [.280] 4x 1.52 [.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 0.51 [.020] 3.48±0.38 [.137±.015] 0.0381 [.0015] -A- 20.31 [.800] 1.02 [.040] H-30265-2-1-2303 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 of 9 2004-06-24 PTF080451 Revision History: 2004-06-24 Previous Version: 2003-11-04, Developmental Data Sheet Page Subjects (major changes since last revision) all Data Sheet Include further data We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2004-06-24 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non–infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life–support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life–support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 of 9