Type BSS127 SIPMOS® Small-Signal-Transistor Product Summary Feature • n-channel • enhancement mode V DS 600 V R DS(on),max 500 Ω 0.023 A ID • Logic level • dv /dt rated • Pb-free lead plating, RoHS compliant PG-SOT23 Type Package Ordering Code Tape and Reel Information Marking BSS127 PG-SOT23 Q67045-A5014 E6327: 3000PCS/reel SI Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID T A=25 °C 0.021 A T A=70 °C 0.017 I D,pulse T A=25 °C 0.09 Reverse diode dv /dt dv /dt I D=0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Pulsed drain current ±20 ESD sensitivity (HBM) as per MIL-STD 883 kV/µs V Class 1 Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.1 6 0.50 W -55 ... 150 °C 55/150/56 page 1 2006-03-24 BSS127 Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=0 V, I D=8 µA 1.4 2.0 2.6 Drain-source leakage current I D (off) V DS=600 V, V GS=0 V, T j=25 °C - - 0.1 V DS=600 V, V GS=0 V, T j=150 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.016 A - 330 600 Ω V GS=10 V, I D=0.016 A - 310 500 0.007 0.015 - Transconductance Rev. 1.1 g fs |V DS|>2|I D|R DS(on)max, I D=0.01 A page 2 S 2006-03-24 BSS127 Parameter Values Symbol Conditions Unit min. typ. max. - 21 28 - 2.4 3 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 1.0 1.5 Turn-on delay time t d(on) - 6.1 19.0 Rise time tr - 9.7 14.5 Turn-off delay time t d(off) Fall time V GS=0 V, V DS=25 V, f =1 MHz V DD=300 V, V GS=10 V, I D=0.01 A, R G=6 Ω pF ns - 14 21 tf - 115 170 Gate to source charge Q gs - 0.05 0.08 Gate to drain charge Q gd - 1.2 1.8 Gate charge total Qg - 1.4 2.1 Gate plateau voltage V plateau - 3.5 - V - - 0.016 A - - 0.09 - 0.82 1.2 V - 160 240 ns - 13.2 19.8 nC Gate Charge Characteristics V DD=400 V, I D=0.01 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.1 T A=25 °C V GS=0 V, I F=0.016 A, T j=25 °C V R=300 V, I F=0.016 A, di F/dt =100 A/µs page 3 2006-03-24 BSS127 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.03 0.5 I D [A] P tot [W] 0.02 0.25 0.01 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 103 0.1 10 µs 0.5 limited by on-state resistance 100 µs 2 10 0.2 0.1 Z thJA [K/W] I D [A] 1 ms 0.01 10 ms 0.05 101 0.02 0.01 single pulse 100 ms 0 10 DC 10-1 0.001 1 10 100 1000 V DS [V] Rev. 1.1 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t p [s] page 4 2006-03-24 BSS127 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.03 1000 2.6 V V 10 4V 3.2 V 3.6 V 3V 0.025 V5 3.8 V 800 V4 0.02 R DS(on) [Ω] I D [A] V 3.8 0.015 V 3.6 600 400 5V 0.01 10 V V 3.2 200 0.005 V3 V 2.6 0 0 0 5 10 0 0.005 V DS [V] 0.01 0.015 0.02 0.025 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.025 0.02 0.02 0.015 0.015 I D [A] g fs [S] 0.025 0.01 0.01 0.005 0.005 0 0 0 1 2 3 4 0.000 V GS [V] Rev. 1.1 0.005 0.010 0.015 0.020 I D [A] page 5 2006-03-24 BSS127 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.1 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=8 µA parameter: I D 1000 3 2.5 800 max %98 V GS(th) [V] R DS(on) [Ω] 2 600 typ 400 typ 1.5 min 1 200 0.5 0 -60 -20 20 60 100 0 140 -60 T j [°C] -20 20 60 100 T j [°C] 140 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 102 10-1 150 °C, 98% 25 °C, 98% 150 °C 25 °C 1 10 I F [A] C [pF] Ciss 10-2 100 Coss Crss 10-1 10-3 0 10 20 30 40 50 0.4 0.8 1.2 1.6 2 2.4 2.8 V SD [V] V DS [V] Rev. 1.1 0 page 6 2006-03-24 BSS127 13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.01 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 6 700 5 680 660 4 640 3 V BR(DSS) [V] 0.5 VBR(DSS) V GS [V] 2 0.2 VBR(DSS) 0.8 VBR(DSS) 1 0 0 1 2 3 4 620 600 580 560 -1 540 -2 520 -3 500 -60 -4 Q gate [nC] Rev. 1.1 -20 20 60 100 140 T j [°C] page 7 2006-03-24 BSS127 Package Outline: Footprint: Rev. 1.1 Packaging: page 8 2006-03-24 BSS127 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 2006-03-24