BSS169 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 100 V R DS(on),max 12 Ω 0.09 A I DSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23 Type Package Pb-free Tape and Reel Information Marking BSS169 PG-SOT-23 Yes L6327: 3000 pcs/reel SFs BSS169 PG-SOT-23 Yes L6906: 3000 pcs/reel sorted in V GS(th) bands1) SFs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.17 T A=70 °C 0.14 0.68 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.17 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS 6 ±20 ESD sensitivity (HBM) as per MIL-STD 883 Unit A kV/µs V Class 1 Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 1) Value 0.36 W -55 ... 150 °C 55/150/56 see table on next page and diagram 11 Rev. 1.3 page 1 2007-02-07 BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - - 350 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-10 V, I D=250 µA 100 - - Gate threshold voltage V GS(th) V DS=3 V, I D=50 µA -2.9 -2.2 -1.8 Drain-source cutoff current I D(off) V DS=100 V, V GS=-10 V, T j=25 °C - - 0.1 V DS=100 V, V GS=-10 V, T j=125 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA On-state drain current I DSS V GS=0 V, V DS=10 V 90 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=0.05 A - 5.3 12 V GS=10 V, I D=0.17 A - 2.9 6 |V DS|>2|I D|R DS(on)max, I D=0.14 A 0.10 0.19 - S -2 - -1.8 V K -2.15 - -1.95 L -2.3 - -2.1 M -2.45 - -2.25 N -2.6 - -2.4 Transconductance g fs Ω Threshold voltage V GS(th) sorted in bands2) V GS(th) J 2) V DS=3 V, I D=50 µA Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.3 page 2 2007-02-07 BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - 51 68 - 9 13 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 4 7 Turn-on delay time t d(on) - 2.9 4.2 Rise time tr - 2.7 4.0 Turn-off delay time t d(off) - 11 17 Fall time tf - 27 40 Gate to source charge Q gs - 0.12 0.16 Gate to drain charge Q gd - 0.9 1.4 Gate charge total Qg - 2.1 2.8 Gate plateau voltage V plateau - -0.43 - V - - 0.17 A - - 0.68 - 0.79 1.2 V - 20.5 25.6 ns - 9.7 12.1 nC V GS=-10 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=-3…7 V, I D=0.12 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=80 V, I D=0.12 A, V GS=-3 to 7 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.3 T A=25 °C V GS=-10 V, I F=0.17 A, T j=25 °C V R=50 V, I F=0.12 A, di F/dt =100 A/µs page 3 2007-02-07 BSS169 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.4 0.2 0.16 0.3 I D [A] P tot [W] 0.12 0.2 0.08 0.1 0.04 0 0 0 40 80 120 160 0 40 80 T A [°C] 120 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 limited by on-state resistance 0.5 100 10 µs 102 Z thJA [K/W] 100 µs I D [A] 1 ms 10-1 10 ms 10-2 0.2 0.1 0.05 0.02 101 0.01 single pulse DC 10-3 100 0 10 1 2 10 10 3 10 V DS [V] Rev. 1.3 160 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2007-02-07 BSS169 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.5 -0.2 V 14 0V 0.2 V -0.1 V 0.1 V 1V 0.5 V 10 V 12 0.4 0.5 V 10 R DS(on) [Ω] 0.3 I D [A] 0.2 V 0.1 V 0V 0.2 -0.1 V 8 1V 6 -0.2 V 4 0.1 10 V 2 0 0 0 2 4 6 8 0 10 0.1 V DS [V] 0.2 0.3 0.4 0.5 0.40 0.50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.4 0.5 0.35 0.4 0.3 0.25 I D [A] g fs [S] 0.3 0.2 0.2 0.15 0.1 0.1 0.05 0 0 -2 -1 0 1 2 V GS [V] Rev. 1.3 0.00 0.10 0.20 0.30 I D [A] page 5 2007-02-07 BSS169 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.05 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=50 µA 24 -1.1 20 -1.5 16 -1.9 V GS(th) [V] R DS(on) [Ω] parameter: I D 98 % 12 8 98 % typ -2.3 -2.7 typ 2% 4 -3.1 0 -3.5 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-10 V; f =1 MHz 10 103 1 102 I D [mA] Ciss M L K J C [pF] N 0.1 101 Coss 50 µA Crss 100 0.01 -3 -2.5 -2 -1.5 -1 V GS [V] Rev. 1.3 0 10 20 30 V DS [V] page 6 2007-02-07 BSS169 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.12 A pulsed parameter: T j parameter: V DD 100 8 0.5 VDS(max) 25 °C 150 °C 6 150 °C, 98% 0.2 VDS(max) 25 °C, 98% 10-1 V GS [V] 4 I F [A] 10-2 0.8 VDS(max) 2 0 10-3 -2 10-4 -4 0 0.5 1 1.5 V SD [V] 0 0.5 1 1.5 2 2.5 Q gate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA V BR(DSS) [V] 120 100 80 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.3 page 7 2007-02-07 BSS169 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.3 page 8 2007-02-07 BSS169 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 9 2007-02-07