BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VPS05176 Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 250 mA Surge forward current, t = 1 µs I FS 4.5 A Total power dissipation, T S = 111 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature T stg V - 65 ...+150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 235 RthJS ≤ 155 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Mar-13-1998 1998-11-01 BAS 16-03W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 75 - - DC characteristics V(BR) Breakdown voltage V I (BR) = 100 µA VF Forward voltage mV I F = 1 mA - - 715 I F = 10 mA - - 855 I F = 50 mA - - 1000 I F = 150 mA - - 1250 - - 1 VR = 25 V, TA = 150 °C - - 30 VR = 75 V, TA = 150 °C - - 50 Vfr - - 1.75 V CD - - 2 pF t rr - - 6 ns IR Reverse current µA VR = 70 V IR Reverse current Forward recovery voltage I F = 10 mA, t p = 20 ns AC characteristics Diode capacitance VR = 0 V, f = 20 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00017 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Semiconductor Group Semiconductor Group Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF 22 Mar-13-1998 1998-11-01 BAS 16-03W Forward current IF = f (TA*;TS) Reverse current IR = f (TA) * Package mounted on epoxy BAS 16 300 BAS 16 EHB00021 ΙR ΙF EHB00022 10 5 nA V R = 70 V mA 10 4 max. 5 200 70 V 10 3 TA TS 5 25 V 100 typ. 10 2 5 0 0 50 100 C 10 1 150 0 50 100 TA ; TS Forward current IF = f V F) Peak forward current IFM = f (t) T A = 25°C TA = 25°C 150 BAS 16 10 2 EHB00023 BAS 16 150 EHB00024 D = 0.005 0.01 0.02 0.05 0.1 0.2 Ι FM A Ι F mA C TA 10 1 100 typ 10 0 max 50 10 -1 tp D= 0 0 0.5 1.0 V 10-2 10-6 1.5 VF Semiconductor Group Semiconductor Group 33 10 -5 10 -4 tp T 10 T -3 10-2 10-1 s 100 t Mar-13-1998 1998-11-01 BAS 16-03W Forward voltage V F = f (TA) 1.0 VF BAS 16 V EHB00025 Ι F = 100 mA 10 mA 1 mA 0.5 0.1 mA 0 0 50 Semiconductor Group Semiconductor Group 100 C TA 150 44 Mar-13-1998 1998-11-01