RH108A Operational Amplifier U W W W U DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH108A is a precision operational amplifier particularly well-suited for high source impedance applications requiring low offset and bias currents and low power consumption. Supply Voltage ...................................................... ± 20V Differential Input Current (Note 1) ...................... ± 10mA Input Voltage (Note 2) .......................................... ± 15V Output Short-Circuit Duration ......................... Indefinite Operating Temperature Range .............. – 55°C to 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent military applications. , LTC and LT are registered trademarks of Linear Technology Corporation. For complete electrical specifications, performance curves and applications information, see the LM108A/LM108 data sheet. U U BUR -I CIRCUIT 10k 20V 20V 33pF 7 2 8 – 1 200Ω 3 2 OR 6 249k + 3V 4 3 30pF 7 – + 8 1 6 1.5k 4 10k –20V –20V RH108A BI W PACKAGE I FOR ATIO U U TOP VIEW 8 COMP1 1 7 V+ – –IN 2 + COMP1 1 –IN 2 6 OUT 5 NC +IN 3 TOP VIEW TOP VIEW COMP2 +IN 3 8 – + V– 4 4 V – (CASE) H PACKAGE 8-LEAD TO-5 METAL CAN J8 PACKAGE 8-LEAD CERDIP COMP2 + 7 V 6 OUT 5 NC COMPIN NC 1 10 GUARD 2 9 COMPOUT –IN 3 8 V+ +IN 4 7 OUT GUARD 5 6 V– W PACKAGE 10-LEAD CERPAC 1 RH108A TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS NOTES (Preirradiation) (Note 4) MIN TA = 25°C TYP MAX SUB- – 55°C T A 125°C GROUP MIN TYP MAX VOS Input Offset Voltage 0.5 1 V OS Temp Average Tempco of Offset Voltage IOS Input Offset Current IS Temp Average Tempco of Offset Current IB Input Bias Current AVOL Large-Signal Voltage Gain VS = ± 15V, VOUT = ± 10V RL 10k 80 4 CMRR Common Mode Rejection Ratio 96 PSRR Power Supply Rejection Ratio 96 1.0 3 1 VS = ± 15V VOUT Output Voltage Swing VS = ± 15V, RL = 10k RIN Input Resistance IS Supply Current 3 2,3 nA 40 5,6 V/mV 1 96 2,3 dB 1 96 2,3 dB ± 13.5 4 V ± 13 5,6 30 V M 0.6 TABLE 1A: ELECTRICAL CHARACTERISTICS CONDITIONS nA pA/°C 3.0 ± 13.5 (Note 6) SYMBOL PARAMETER 1 ± 13 3 2,3 2.5 2.0 mV µV/°C 0.4 3 UNITS 2,3 5.0 0.2 Input Voltage Range SUBGROUP 1 0.4 2 mA (Postirradiation) (Note 5) NOTES 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 80KRAD(Si) MIN MAX MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage 0.5 0.5 0.5 1.0 mV IOS Input Offset Current 0.2 0.2 0.2 0.2 nA IB Input Bias Current ± 2.0 ± 2.0 ± 2.0 ± 4.0 nA AVOL Large-Signal Voltage Gain CMRR PSRR VS = ± 15V, VOUT = ± 10V RL 10k 98 98 90 86 dB Common Mode Rejection Ratio 96 96 84 70 dB Power Supply Rejection Ratio 96 96 84 70 dB ±13.5 ±13.5 ±13.5 ±13.5 V ±13 ±13 ±13 ±13 V 30 30 30 30 Input Voltage Range VOUT Output Voltage Swing RIN Input Resistance IS Supply Current Note 1: Differential input voltages greater than 1V will cause excessive current to flow through the input diodes unless limiting resistance is used. Note 2: For supply voltages less than ±15V, the maximum input voltage is equal to the supply voltage. 2 3 3 0.6 0.6 0.6 M 0.6 Note 3: Guaranteed by design, characterization or correlation to other tested parameters. Note 4: ± 5V V S ± 20V unless otherwise noted. Note 5: VS = ± 15V, VCM = 0V, TA = 25°C unless otherwise noted. Note 6: 25°C T A 125°C. mA RH108A U W TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group C and D End Point Electrical Parameters (Method 5005) PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures (including Delta parameters) of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. 1 * PDA Applies to subgroup 1. See PDA Test Notes. TOTAL DOSE BIAS CIRCUIT 10k 15V 0.1µF 2 10k 8V 3 30pF 7 – + 1 8 6 4 0.1µF –15V RH108A TDBC Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 3 RH108A U W TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage V S = ±15V VCM = 0V V S = ±15V VCM = 0V 0.5 0 –0.5 –1.0 –1.5 2 0 –2 –4 10 100 TOTAL DOSE KRAD (Si) 1000 1 10 100 TOTAL DOSE KRAD (Si) RH108A G01 –1.0 1 1000 Power Supply Rejection Ratio 100 90 80 70 V S = ±15V VCM = ±13.5V 150 POWER SUPPLY REJECTION RATIO (dB) 110 COMMON MODE REJECTION RATIO (dB) 120 140 130 120 110 100 90 80 1000 RH108A G04 140 120 100 80 60 40 20 70 10 100 TOTAL DOSE KRAD (Si) 1000 160 160 V S = ±15V VOUT = ±10V RL = 10k 10 100 TOTAL DOSE KRAD (Si) RH108A G03 Common Mode Rejection Ratio Open-Loop Gain 1 –0.5 RH108A G02 140 130 0 –2.0 –8 1 0.5 –1.5 –6 –2.0 V S = ±15V VCM = 0V 1.0 INPUT OFFSET CURRENT (nA) 4 INPUT BIAS CURRENT (nA) INPUT OFFSET VOLTAGE (mV) 1.5 6 1.0 OPEN-LOOP GAIN (V/mV) Input Offset Current Input Bias Current 1.5 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH108A G05 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH108A G06 I.D. No. 66-10-0156 Rev. A 0896 4 Linear Technology Corporation LT/HP 0896 REV A 500 • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977 LINEAR TECHNOLOGY CORPORATION 1989