PD-95309A IRF7324D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint Lead-Free A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -20V RDS(on) = 0.27Ω D Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter Max. Units V VDS Drain-to-Source Voltage -20 VGS Gate-to-Source Voltage ± 12 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -1.8 IDM Pulsed Drain Current -22 PD @TA = 25°C Power Dissipation c PD @TA = 70°C f Power Dissipation f dV/dt Peak Diode Recovery TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A 2.0 W 1.3 d -0.74 V/ns 16 -55 to + 150 mW/°C °C Thermal Resistance Parameter g Junction-to-Ambient fg Junction-to-Drain Lead RθJL RθJA Notes Typ. Max. Units ––– 20 °C/W ––– 62.5 through are on page 8 www.irf.com 1 12/06/04 IRF7324D1PbF MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVDSS RDS(on) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. Typ. Max. Units -20 ––– ––– ––– 0.155 0.270 ––– 0.260 0.400 -0.70 ––– ––– ––– ––– -1.0 ––– ––– -25 ––– ––– 100 ––– ––– -100 2.4 ––– ––– ––– 5.2 7.8 ––– 0.88 ––– ––– 2.5 ––– ––– 10 ––– ––– 12 ––– ––– 11 ––– ––– 7.6 ––– ––– 260 ––– ––– 140 ––– ––– 70 ––– V Ω V µA nA S nC Conditions VGS = 0V, ID = -250µA VGS = -4.5V, ID = -1.2A VGS = -2.7V, ID = -0.6A VDS = VGS, ID = -250µA VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125°C VGS = -12V VGS = 12V VDS = -16V, ID = -2.2A ID = -2.2A VGS = -4.5V VDD = -16V VDD = -10V, VGS = -4.5V ID = -2.2A RG = 6.0Ω RD = 4.5Ω VGS = 0V VDS = -15V ƒ = 1.0MHz e e e ns pF MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS ISM VSD trr Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time ––– ––– ––– ––– ––– ––– ––– 26 -2.2 -22 -1.2 39 V ns TJ = 25°C, IS = -2.2A, VGS = 0V TJ = 25°C, IF = -2.2A, VDD = -10V Qrr Reverse Recovery Charge ––– 24 36 nC di/dt = 100A/µs e e Schottky Diode Maximum Ratings Max. Units IF(av) Parameter Max. Average Forward current ISM Max.Peak one cycle Non-repetitive 1.7 1.2 120 Surge Current 11 A Conditions 50% Duty Cycle Rectangular Wave, TA = 25°C TA = 70°C 5µs sine or 3µs Rect. Pulse Following any rated 10ms sine or 6ms Rect. Pulse load condition & with VRRM applied Schottky Diode Electrical Specifications VFM Parameter Max. Forward Voltage Drop IRM Max. Reverse Leakage Current Ct dV/dt Max. Junction Capacitance Max. Voltage Rate of Charge 2 Max. Units 0.50 0.62 0.39 0.57 0.05 10 92 3600 V mA Conditions IF = 1.0A, TJ = 25°C IF = 2.0A, TJ = 25°C IF = 1.0A, TJ = 125°C IF = 2.0A, TJ = 125°C VR = 20V TJ = 25°C TJ = 125°C pF VR = 5Vdc (100kHz to 1MHz) 25°C V/µs Rated VR www.irf.com IRF7324D1PbF Power Mosfet Characteristics 1000 100 100 BOTTOM 10 TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V 1 -1.5V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 10 BOTTOM 1 -1.5V 0.01 ≤ 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 0.1 -VDS, Drain-to-Source Voltage (V) 1 10 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 100.0 TJ = 25°C 10.0 -ISD, Reverse Drain Current (A) -ID, Drain-to-Source Current(Α) VGS -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V TJ = 150°C 1.0 VDS = -10V TJ = 150°C 10.0 TJ = 25°C 1.0 ≤ 60µs PULSE WIDTH VGS = 0V 0.1 1.0 2.0 3.0 4.0 5.0 6.0 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 7.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7324D1PbF Power Mosfet Characteristics RDS ( on) , Drain-to-Source On Resistance (Ω) RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 ID = -2.2A VGS = -4.5V 1.0 0.5 -60 -40 -20 0 20 40 60 0.164 VGS= - 4.5V 0.160 0.156 0.152 VGS= - 5.0V 0.148 0.144 0.140 80 100 120 140 160 0.0 0.5 TJ , Junction Temperature (°C) Fig 6. 2.0 2.5 3.0 Typical On-Resistance Vs. Drain Current 100 0.4 OPERATION IN THIS AREA LIMITED BY R DS(on) ID = -2.2A TJ = 25°C -ID, Drain-to-Source Current (A) () RDS (on), Drain-to -Source On Resistance Ω 1.5 -ID , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 0.3 0.2 0.1 0.0 2.0 4.0 6.0 8.0 10.0 -VGS, Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 1.0 100µsec 10 1msec Tc = 25°C Tj = 150°C Single Pulse 10msec 1 1 10 100 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7324D1PbF Power Mosfet Characteristics 600 -VGS, Gate-to-Source Voltage (V) 500 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 400 300 Ciss 200 Coss 100 Crss ID= -2.2A VDS= -16V VDS= -10V 10 8 6 4 2 0 0 1 10 0 100 2 4 6 8 10 12 QG Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7324D1PbF Schottky Diode Characteristics 100 Instantaneous Forward Current - IF (A) Reverse Current - IR (mA) 10 10 J 1 0.01 0.001 0.0001 1 0.1 ) 0 4 8 12 16 20 R TJ = 150°C TJ = 125°C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage TJ = 25°C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward VFM (V) ForwardVoltage Votage Drop - V FM (V) Fig. 12 -Typical Forward Voltage Drop Characteristics Fig.14 - Typical Junction capacitance Vs.Reverse Voltage 6 www.irf.com IRF7324D1PbF SO-8 (Fetky) Package Outline D (Dimensions are shown in millimeters (inches) ) DIM B 5 A 8 6 7 6 H E 0.25 [.010] 1 2 3 A 4 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 6X e e1 C .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° y 0.10 [.004] 0.25 [.010] MAX K x 45° A 8X b MILLIMET ERS MAX A 5 INCHES MIN A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: THIS IS AN IRF7807D1 (FETKY) INTERNATIONAL RECTIFIER LOGO www.irf.com XXXX 807D1 DATE CODE (YWW) P = DISGNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER 7 IRF7324D1PbF SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) ISD ≤ -2.2A, di/dt ≤ -96A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2% Surface mounted on FR-4 board, steady-state Rθ is measured at TJ of approximately 90°C. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 8 www.irf.com