IRF IRF7534D1

PD -93864
IRF7534D1
FETKY MOSFET & Schottky Diode
HEXFET®
Co-packaged
power
MOSFET and Schottky diode
● Ultra Low On-Resistance
MOSFET
● Trench technology
TM Footprint
● Micro8
● Available in Tape & Reel
Description
●
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = -20V
RDS(on) = 0.055Ω
Schottky Vf=0.39V
T op V ie w
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer
an innovative, board space saving solution for switching regulator and power
management applications. International Rectifier utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier’s low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide variety of portable electronics
applications, such as cell phones, PDAs, etc.
The Micro8TM package makes an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to
fit easily into extremely thin application environments such as portable electronics
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
Units
-20
-4.3
-3.4
-34
1.25
0.8
10
± 12
1.1
-55 to + 150
V
A
W
W
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Max.
Maximum Junction-to-Ambient „
Units
100
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
‚ ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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3/22/00
IRF7534D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
-0.6
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
2.1
2.5
10
46
60
64
1066
402
125
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
0.055
VGS = -4.5V, ID = -4.3A ƒ
Ω
0.105
VGS = -2.5V, ID = -3.4A ƒ
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -0.8A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 125°C
-100
VGS = -12V
nA
100
VGS = 12V
15
ID = -3A
3.1
nC VDS = -10V
3.7
VGS = -5V
–––
VDD = -10V
–––
ID = -2A
ns
–––
RG = 6.0Ω
–––
RD = 5Ω, ƒ
–––
VGS = 0V
–––
pF
VDS = -10V
–––
ƒ = 1.0MHz
MOSFET Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– -1.3
A
––– ––– -34
––– ––– -1.2
V
TJ = 25°C, IS = -1.6A, VGS = 0V
––– 54
82
ns
TJ = 25°C, IF = -2.5A
––– 41
61
nC di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
IF(av)
I SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
1.9
A
1.4
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
TA = 70°C
See Fig.13
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
V
0.39
0.57
0.02
mA
8
92
pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V
TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7534D1
Power MOSFET Characteristics
100
100
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
1
-1.50V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
10
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
-1.50V
1
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -15V
20µs PULSE WIDTH
1
1.0
2.0
3.0
4.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
ID = -4.3A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7534D1
Power MOSFET Characteristics
VGS =
Ciss =
Crss =
Coss =
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
C, Capacitance (pF)
1200
Ciss
800
400
Coss
Crss
-VGS , Gate-to-Source Voltage (V)
15
1600
12
VDS =-10V
9
6
3
0
1
10
ID = -4.3A
-4.5A
0
100
0
4
-VDS , Drain-to-Source Voltage (V)
16
20
24
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
8
QG , Total Gate Charge (nC)
2.4
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7534D1
0.12
RDS(on) , Drain-to -Source On Resistance (Ω )
RDS (on) , Drain-to-Source On Resistance (Ω )
Power MOSFET Characteristics
0.10
VGS = -2.5V
0.08
0.06
VGS = -4.5V
0.04
0
5
10
15
0.10
0.08
0.06
ID = -4.3A
0.04
2.0
20
3.0
4.0
5.0
6.0
-V GS, Gate -to -Source Voltage (V)
-I D , Drain Current (A)
Fig 9. Typical On-Resistance Vs. Drain
Current
Fig 10. Typical On-Resistance Vs. Gate
Voltage
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
P DM
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7534D1
Schottky Diode Characteristics
100
10
TJ = 150°C
Reverse Current - IR (mA)
125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
A
0.0001
0
4
8
12
16
20
Reverse Voltage - V R (V)
1
T J = 1 50 °C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
T J = 1 25 °C
T J = 2 5°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forward
Voltage
Forw
a rd Vo
lta ge Drop
D ro p --VVFF(V)
M (V )
Fig. 12 -Typical Forward Voltage Drop
Characteristics
A llow ab le A m b ie nt T e m p era tu re - (°C )
In sta nta n eo us F o rw a rd C urre n t - I F (A)
10
160
V r = 20 V
R t hJA = 1 00°C /W
Sq uare wave
140
120
100
80
D
D
D
D
D
60
40
= 3/4
= 1/2
= 1/3
= 1/4
= 1/5
DC
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A v e ra ge F o rw ard C urren t - I F(AV ) (A )
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7534D1
Package Outline
Micro8
 Outline
Dimensions are shown in millimeters (inches)
LE AD A S S IG N M E N TS
IN C H E S
D IM
D
M IL LIM E TE R S
M IN
MAX
M IN
A
.0 36
.044
0 .9 1
1 .11
A1
.0 04
.008
0 .1 0
0 .20
B
.0 10
.014
0 .2 5
0 .36
C
.0 05
.0 07
0 .13
0.18
D
.1 16
.1 20
2 .95
3.05
e
.025 6 B A SIC
0.6 5 BA S IC
e1
.012 8 B A SIC
0.3 3 BA S IC
E
.1 16
.120
2.9 5
3 .0 5
H
.1 88
.1 98
4 .78
5.03
e
L
.016
.0 26
0 .4 1
0 .6 6
6X
θ
0°
6°
0°
6°
3
-B-
D D D D
D 1 D 1 D 2 D2
8 7 6 5
8 7 6 5
S IN G LE
D UAL
8 7 6 5
3
H
E
0.25 (.010)
-A-
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S 2 G 2
1 2 3 4
MAX
e1
RE C O M M E N D E D FO O T P RIN T
θ
1.04
( .041 )
8X
A
-C B
0.10 (.004)
A1
8X
0.08 (.003)
M
C A S
L
8X
B S
0.38
8X
( .015 )
C
8X
3.20
( .126 )
4.24
5.28
( .167 ) ( .208 )
NO TES :
1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
0.65 6X
( .0256 )
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H .
Part Marking Information
Micro8

D A T E C O D E (YW W ) A
Y = LA S T D IG IT O F YE A R
W W = W EEK
E X AM PLE : T H IS IS A N IR F 7501
451
7501
PART NUMBER
TO P
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IRF7534D1
Tape & Reel Information
Micro8

Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F E E D D IR EC T IO N
N O TE S :
1 . O U T L IN E C O N FO R M S T O E IA -4 81 & E IA -5 4 1 .
2 . C O N TR O L L IN G D IM E N S IO N : M IL LIM E T E R .
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -481 & E IA -541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
2/2000
8
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