SPB07N60C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability • Improved transconductance Type Package Ordering Code Marking SPB07N60C3 PG-TO263 Q67040-S4394 07N60C3 Maximum Ratings Unit Value Symbol Parameter SPB Continuous drain current A ID TC = 25 °C 7.3 TC = 100 °C 4.6 ID puls 21.9 A EAS 230 mJ EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 83 W Operating and storage temperature Reverse diode dv/dt 6) T j , Tstg dv/dt -55...+150 15 °C V/ns Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD =50V Rev. 2.5 Page 1 2005-09-14 SPB07N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, ID = 7.3 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 3) - 35 - - - 260 Soldering temperature, reflow soldering, MSL1 Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=7.3A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=350µA, VGS=VDS Zero gate voltage drain current I DSS VDS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.5 RG µA Tj=25°C - 0.5 1 Tj=150°C - - 100 VGS=30V, VDS=0V - - 100 Ω VGS=10V, ID=4.6A Tj=25°C - 0.54 0.6 Tj=150°C - 1.46 - f=1MHz, open drain - 0.8 - Page 2 nA 2005-09-14 SPB07N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 6 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=4.6A Input capacitance Ciss V GS=0V, V DS=25V, - 790 - Output capacitance Coss f=1MHz - 260 - Reverse transfer capacitance Crss - 16 - - 30 - - 55 - Effective output capacitance,4) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/13V, - 6 - Rise time tr ID=7.3A, RG=12Ω, - 3.5 - Turn-off delay time td(off) Tj=125°C - 60 100 Fall time tf - 7 15 - 3 - - 9.2 - - 21 27 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480V, ID=7.3A VDD=480V, ID=7.3A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=7.3A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.5 Page 3 2005-09-14 SPB07N60C3 Electrical Characteristics Parameter Symbol Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 7.3 - - 21.9 TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , - 400 600 ns Reverse recovery charge Qrr diF/dt=100A/µs - 4 - µC Peak reverse recovery current Irrm - 28 - A Peak rate of fall of reverse dirr /dt - 800 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Value Symbol Unit Symbol SPB Rth1 0.024 Rth2 Value Unit SPB K/W Cth1 0.00012 0.046 Cth2 0.0004578 Rth3 0.085 Cth3 0.000645 Rth4 0.308 Cth4 0.001867 Rth5 0.317 Cth5 0.004795 Rth6 0.112 Cth6 0.045 Tj R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.5 Page 4 2005-09-14 SPB07N60C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 100 SPP07N60C3 34 W W 28 80 24 Ptot Ptot 70 60 50 20 16 40 12 30 8 20 4 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 160 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( V DS ) ID = f (VDS) parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C 10 °C 2 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 2.5 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 V VDS 10 3 Page 5 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2005-09-14 3 SPB07N60C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (t p) ZthJC = f (t p) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W ZthJC 10 0 ZthJC 10 0 10 -1 10 -2 10 -3 -7 10 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 s tp D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 1 s 10 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 13 24 A 20V 10V 8V A 20V 8V 6.5V 11 7V 6V 9 6,5V 16 ID ID 10 8 5.5V 7 12 6V 6 5V 5 8 5,5V 4 4.5V 3 5V 4 2 4,5V 0 0 Rev. 2.5 5 10 15 VDS 4V 1 25 V 0 0 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS Page 6 2005-09-14 SPB07N60C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 4.6 A, VGS = 10 V 10 4.5V RDS(on) 8 SPP07N60C3 Ω 4V 2.8 RDS(on) Ω 3.4 7 5V 6 6V 6.5V 8V 20V 5 5.5V 4 2.4 2 1.6 1.2 3 98% 0.8 2 typ 0.4 1 0 0 2 4 6 8 10 12 0 -60 A 15 ID -20 20 60 100 180 Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 7.3 A pulsed parameter: tp = 10 µs °C 24 16 SPP07N60C3 A V 25°C 20 12 16 VGS ID 18 14 0,2 VDS max 10 0,8 VDS max 150°C 12 8 10 6 8 6 4 4 2 2 0 0 Rev. 2.5 2 4 6 8 10 12 14 16 V 20 VGS Page 7 0 0 4 8 12 16 20 24 28 nC 34 Q Gate 2005-09-14 SPB07N60C3 13 Forward characteristics of body diode 14 Typ. switching time IF = f (VSD) t = f (ID), inductive load, T j=125°C parameter: Tj , tp = 10 µs par.: V DS=380V, VGS=0/+13V, R G=12Ω 2 SPP07N60C3 10 90 ns A td(off) 70 10 1 t IF 60 50 40 10 0 30 tf td(on) tr Tj = 25 °C typ Tj = 150 °C typ 20 Tj = 25 °C (98%) 10 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 0 3 1 2 3 4 5 6 VSD A ID 15 Typ. switching time 16 Typ. drain current slope t = f (RG), inductive load, Tj=125°C di/dt = f(R G), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=7.3 A par.: V DS=380V, VGS=0/+13V, ID=7.3A 500 8 3000 ns A/µs 400 di/dt t 350 300 250 2000 1500 td(off) 200 di/dt(on) 1000 150 td(on) tf tr 100 500 di/dt(off) 50 0 0 Rev. 2.5 20 40 60 80 100 Ω 130 RG Page 8 0 0 20 40 60 80 100 Ω 130 RG 2005-09-14 SPB07N60C3 17 Typ. drain source voltage slope 18 Typ. switching losses dv/dt = f(RG), inductive load, Tj = 125°C E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A par.: V DS=380V, VGS=0/+13V, R G=12Ω 100 0.025 V/ns diode commutation losses. mWs 80 70 E dv/dt *) E on includes SDP06S60 60 50 0.015 dv/dt(on) 40 Eoff 0.01 30 20 0.005 Eon* dv/dt(off) 10 0 0 20 40 60 80 0 0 120 Ω 1 2 3 4 5 6 RG 19 Typ. switching losses 20 Avalanche SOA E = f(RG), inductive load, Tj=125°C IAR = f (tAR) par.: VDS=380V, VGS=0/+13V, ID=7.3A par.: Tj ≤ 150 °C 0.2 mWs A ID 8 8 *) Eon includes SDP06S60 diode commutation losses. A 0.16 Tj(START)=25°C 6 IAR E 0.14 0.12 0.1 5 Tj(START)=125°C 4 Eoff 0.08 3 0.06 Eon* 2 0.04 1 0.02 0 0 Rev. 2.5 20 40 60 80 100 Ω 130 RG Page 9 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR 4 2005-09-14 SPB07N60C3 21 Avalanche energy 22 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = 5.5 A, V DD = 50 V 260 720 mJ SPP07N60C3 V 220 V(BR)DSS EAS 200 180 160 680 660 640 140 120 620 100 600 80 60 580 40 560 20 0 20 40 60 80 100 120 °C 540 -60 160 -20 20 60 100 °C Tj 180 Tj 23 Avalanche power losses 24 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: E AR=0.5mJ parameter: V GS=0V, f=1 MHz 10 4 500 pF W Ciss C PAR 10 3 300 10 2 Coss 200 10 1 100 0 4 10 10 5 MHz 10 6 100 200 300 400 V 600 VDS f Rev. 2.5 10 0 0 Crss Page 10 2005-09-14 SPB07N60C3 25 Typ. Coss stored energy Eoss=f(VDS) 5.5 µJ 4.5 Eoss 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Rev. 2.5 Page 11 2005-09-14 SPB07N60C3 PG-TO263-3-2/ PG-TO263-3-5/ PG-TO263-3-22 Rev. 2.5 Page 12 2005-09-14 SPB07N60C3 Published by Infineon Technologies AG 81726 München Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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