INFINEON SPI11N65C3

SPP11N65C3,SPA11N65C3
SPI11N65C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
PG-TO262
V DS
650
V
RDS(on)
0.38
Ω
ID
11
A
PG-TO220FP
PG-TO220
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Type
Package
Ordering Code
Marking
SPP11N65C3
PG-TO220
Q67040-S4557
11N65C3
SP000216318
11N65C3
Q67040-S4561
11N65C3
SPA11N65C3
PG-TO220FP
SPI11N65C3
PG-TO262
Maximum Ratings
Symbol
Parameter
Value
SPP_I
Continuous drain current
Unit
SPA
ID
A
TC = 25 °C
11
111)
TC = 100 °C
7
71)
33
33
Pulsed drain current, tp limited by T jmax
ID puls
A
Avalanche energy, single pulse
EAS
340
340
EAR
0.6
0.6
Avalanche current, repetitive tAR limited by T jmax
IAR
4
4
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, T C = 25°C
Ptot
125
33
Operating and storage temperature
Tj , Tstg
mJ
ID=2.5A, V DD=50V
Avalanche energy, repetitive tAR limited by T jmax 2)
ID=4A, VDD=50V
Rev. 2.9
Page 1
-55...+150
W
°C
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
V DS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Parameter
Symbol
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.8
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm2 cooling area 3)
-
35
-
-
-
260
Soldering temperature, wavesoldering
T sold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage
V(BR)DSS V GS=0V, I D=0.25mA
Drain-Source avalanche
V(BR)DS
V GS=0V, I D=4A
Gate threshold voltage
VGS(th)
ID=500µA, VGS=VDS
Zero gate voltage drain current
IDSS
V DS=600V, V GS=0V,
Values
Unit
min.
typ.
max.
650
-
-
-
730
-
2.1
3
3.9
V
breakdown voltage
Tj=25°C
-
0.1
1
Tj=150°C
-
-
100
-
-
100
Gate-source leakage current
IGSS
V GS=20V, V DS=0V
Drain-source on-state resistance
RDS(on)
V GS=10V, I D=7A
Gate input resistance
Rev. 2.9
RG
µA
Ω
Tj=25°C
-
0.34
0.38
Tj=150°C
-
0.92
-
f=1MHz, open drain
-
0.86
-
Page 2
nA
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
Electrical Characteristics
Parameter
Transconductance
Symbol
g fs
Conditions
Values
Unit
min.
typ.
max.
-
8.3
-
S
pF
V DS≥2*I D*RDS(on)max,
ID=7A
Input capacitance
Ciss
V GS=0V, VDS=25V,
-
1200
-
Output capacitance
Coss
f=1MHz
-
390
-
Reverse transfer capacitance
Crss
-
30
-
Effective output capacitance,4)
Co(er)
-
45
-
-
85
-
energy related
Effective output capacitance,5)
V GS=0V,
V DS=0V to 480V
Co(tr)
time related
Turn-on delay time
td(on)
V DD=380V, V GS=0/10V,
-
10
-
Rise time
tr
ID=11A,
-
5
-
Turn-off delay time
td(off)
RG=6.8Ω
-
44
70
Fall time
tf
-
5
9
-
5.5
-
-
22
-
-
45
60
-
5.5
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =480V, ID =11A
VDD =480V, ID =11A,
nC
VGS =0 to 10V
Gate plateau voltage
V(plateau) VDD =480V, ID =11A
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
V
AV=EA R*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4C
is a fixed capacitance that gives the same stored energy as C
while V is rising from 0 to 80% V
o(er)
oss
DS
DSS.
5C
o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% VDSS.
Rev. 2.9
Page 3
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
Electrical Characteristics
Symbol
Parameter
Inverse diode continuous
Conditions
Values
min.
typ.
max.
-
-
11
-
-
33
TC =25°C
IS
Unit
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS =0V, IF =IS
-
1
1.2
V
Reverse recovery time
trr
VR =480V, IF =IS ,
-
400
600
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
6
-
µC
Peak reverse recovery current
Irrm
-
41
-
A
Peak rate of fall of reverse
dirr /dt
-
1200
-
A/µs
Tj =25°C
recovery current
Typical Transient Thermal Characteristics
Symbol
Value
Unit
SPP_I
SPA
Rth1
0.015
0.15
Rth2
0.03
Rth3
Symbol
Value
Unit
SPP_I
SPA
Cth1
0.0001878
0.0001878
0.03
Cth2
0.0007106
0.0007106
0.056
0.056
Cth3
0.000988
0.000988
Rth4
0.197
0.194
Cth4
0.002791
0.002791
Rth5
0.216
0.413
Cth5
0.007285
0.007401
Rth6
0.083
2.522
Cth6
0.063
0.412
R th1
R th,n
Tj
K/W
T case
Ws/K
External Heatsink
P tot (t)
C th1
C th2
C th,n
T amb
Rev. 2.9
Page 4
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
1 Power dissipation
2 Power dissipation FullPAK
Ptot = f (TC)
Ptot = f (TC)
SPP11N65C3
35
140
W
W
120
110
25
P tot
P tot
100
90
20
80
70
15
60
50
10
40
30
20
5
10
0
0
20
40
60
80
100
120
°C
0
160
0
20
40
60
80
100
120
TC
3 Safe operating area
4 Safe operating area FullPAK
ID = f ( VDS )
ID = f (VDS)
parameter : D = 0 , TC=25°C
parameter: D = 0, TC = 25°C
10
2
2
10
A
°C 160
TC
A
10
0
10
1
10
0
ID
1
ID
10
10
-1
10
-2
10
tp = 0.0008 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
0
Rev. 2.9
10
1
10
2
V
10
V DS
3
Page 5
10
-1
10
-2
10
tp = 0.0008 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
0
10
1
10
2
V
10
VDS
2007-08-30
3
SPP11N65C3,SPA11N65C3
SPI11N65C3
5 Transient thermal impedance FullPAK
6 Typ. output characteristic
ZthJC = f (tp)
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
parameter: D = t p/t
1
10
40
K/W
0
32
7V
28
10
10
10
ID
Z thJC
10
20V
10V
8V
A
-1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-2
6,5V
24
20
6V
16
12
-3
5,5V
8
5V
4
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
4,5V
0
1
0
3
6
9
12
15
18
V
27
VDS
21
tp
7 Typ. output characteristic
8 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
2
22
20V
8V
7V
7.5V
A
18
Ω
R DS(on)
16
ID
4.5V
4V
6V
14
5V
6V
5.5V
1.6
1.4
5.5V
12
1.2
10
5V
8
1
6
4.5V
0.8
4V
0.6
4
6.5V
8V
20V
2
0
0
5
10
15
V
0.4
25
0
V DS
Rev. 2.9
Page 6
2
4
6
8
10
12
14
16
A
ID
20
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
9 Drain-source on-state resistance
10 Typ. transfer characteristics
RDS(on) = f (Tj)
ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 7 A, V GS = 10 V
parameter: tp = 10 µs
SPP11N65C3
2.1
40
Ω
A
25°C
1.8
28
1.4
ID
R DS(on)
32
1.6
1.2
24
150°C
20
1
16
0.8
12
0.6
98%
0.4
8
typ
4
0.2
0
-60
-20
20
60
100
0
°C
180
0
2
4
6
8
10
12
Tj
V 15
VGS
11 Typ. gate charge
12 Forward characteristics of body diode
VGS = f (QGate)
IF = f (V SD)
parameter: ID = 11 A pulsed
parameter: Tj , tp = 10 µs
SPP11N65C3
16
10
V
2 SPP11N65C3
A
0,2 VDS max
10
10
1
10
0
IF
VGS
12
0,8 VDS max
8
6
T j = 25 °C typ
4
T j = 150 °C typ
T j = 25 °C (98%)
2
T j = 150 °C (98%)
10
0
0
10
20
30
40
50
nC
70
0
QGate
Rev. 2.9
-1
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
Page 7
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
13 Typ. switching time
14 Typ. switching time
t = f (ID), inductive load, T j=125°C
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, R G=6.8Ω
par.: VDS=380V, VGS=0/+13V, I D=11 A
350
70
ns
ns
60
td(off)
55
250
50
t
t
45
200
40
td(off)
td(on)
tr
tf
35
150
30
25
20
100
tf
15
td(on)
10
50
tr
5
0
0
2
4
6
8
0
A
12
0
10
20
30
40
50
Ω
ID
70
RG
15 Typ. drain current slope
16 Typ. drain source voltage slope
di/dt = f(RG), inductive load, Tj = 125°C
dv/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, I D=11A
par.: VDS=380V, VGS=0/+13V, I D=11A
140
3000
V/ns
A/µs
dv/dt(off)
120
dv/dt
di/dt
110
2000
100
90
80
1500
70
60
1000
50
di/dt(off)
500
40
dv/dt(on)
30
di/dt(on)
20
0
0
20
40
60
80
10
Ω
120
0
RG
Rev. 2.9
10
20
30
40
50
Ω
70
RG
Page 8
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
17 Typ. switching losses
18 Typ. switching losses
E = f (I D), inductive load, Tj=125°C
E = f(R G), inductive load, T j=125°C
par.: VDS=380V, VGS=0/+13V, R G=6.8Ω
par.: VDS=380V, VGS=0/+13V,I D=11A
0.04
0.24
*) Eon includes SPD06S60 diode
commutation losses
mWs
*) Eon includes SPD06S60 diode
commutation losses
mWs
0.03
Eoff
E
E
0.16
0.025
0.02
0.12
0.015
0.08
Eon*
0.01
Eon*
0.04
0.005
Eoff
0
0
2
4
6
0
A
8
12
0
10
20
30
40
50
ID
70
RG
19 Avalanche SOA
20 Avalanche energy
IAR = f (tAR)
EAS = f (T j)
par.: T j ≤ 150 °C
par.: ID = 2.5 A, V DD = 50 V
350
4
A
mJ
3
Tj(Start)=25°C
250
E AS
I AR
Ω
2.5
200
2
Tj(Start)=125°C
150
1.5
100
1
50
0.5
0 -3
10
Rev. 2.9
10
-2
10
-1
10
0
10
1
10
2
µs 10
t AR
4
Page 9
0
20
40
60
80
100
120
°C 160
Tj
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
21 Drain-source breakdown voltage
22 Avalanche power losses
V(BR)DSS = f (Tj)
PAR = f (f )
parameter: EAR=0.6mJ
785
300
V
745
725
P AR
V(BR)DSS
W
705
685
200
150
665
100
645
625
50
605
585
-60
-20
20
60
100
°C
0 4
10
180
10
5
Hz
Tj
10
f
23 Typ. capacitances
24 Typ. Coss stored energy
C = f (V DS)
Eoss=f(V DS)
parameter: VGS=0V, f=1 MHz
10
4
7.5
µJ
pF
Ciss
10
6
3
C
E oss
5.5
5
4.5
10
4
2
Coss
3.5
3
2.5
10
1
2
Crss
1.5
1
0.5
10
0
0
100
200
300
400
V
0
600
0
V DS
Rev. 2.9
100
200
300
400
V
600
VDS
Page 10
2007-08-30
6
SPP11N65C3,SPA11N65C3
SPI11N65C3
Definition of diodes switching characteristics
Rev. 2.9
Page 11
2007-08-30
SPP11N65C3, SPA11N65C3
SPI11N65C3
PG-TO220-3-1, PG-TO220-3-21
Rev. 2.9
Page 12
2007-08-30
SPP11N65C3, SPA11N65C3
SPI11N65C3
PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute )
Rev. 2.9
Page 13
2007-08-30
SPP11N65C3, SPA11N65C3
SPI11N65C3
PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
Rev. 2.9
Page 14
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.9
Page 15
2007-08-30