HITFET= BTS 3134 D Smart Lowside Power Switch Features Product Summary Logic Level Input Input Protection (ESD) Thermal shutdown Overload protection Short circuit protection Overvoltage protection Current limitation Analog driving possible Drain source voltage VDS 42 V On-state resistance RDS(on) 50 m Nominal load current I D(Nom) 3.5 A Clamping energy EAS 3 J Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Current Limitation In Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Pin 1 ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Page 1 2004-02-02 BTS 3134 D Maximum Ratings at T j = 25°C, unless otherwise specified Parameter Symbol Value Drain source voltage VDS 42 Drain source voltage for short circuit protection VDS(SC) 30 Unit V T j = -40...150°C Continuous input current IIN -0.2V VIN 10V mA no limit | IIN | 2 VIN < -0.2V or VIN > 10V Operating temperature Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation Ptot °C W T C = 85 °C 43 6cm 2 cooling area , T A = 85 °C 1.1 Unclamped single pulse inductive energy 1) EAS 3 J Load dump protection VLoadDump2) = V A + VS VLD 65 V 2 kV VIN = 0 and 10 V, t d = 400 ms, RI = 2 , RL = 4.5 , VA = 13.5 V Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - case: RthJC SMD: junction - ambient RthJA 1.5 @ min. footprint 115 @ 6 cm2 cooling area 3) 55 K/W 1 Not tested, specified by design. 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. Page 2 2004-02-02 BTS 3134 D Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 µA Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS VDS = 32 V, VIN = 0 V Input threshold voltage V VIN(th) ID = 1.4 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 1.4 mA, Tj = 150 °C 0.8 - - - 10 30 On state input current IIN(on) On-state resistance RDS(on) m VIN = 5 V, ID = 3 A, Tj = 25 °C - 45 60 VIN = 5 V, ID = 3 A, Tj = 150 °C - 75 100 VIN = 10 V, ID = 3 A, Tj = 25 °C - 35 50 VIN = 10 V, ID = 3 A, Tj = 150 °C - 65 90 On-state resistance µA RDS(on) Nominal load current A ID(Nom) Tj < 150°C, VIN = 10 V, TA = 85 °C, SMD 1) Nominal load current 3.5 - - ID(ISO) 7.1 - - ID(lim) 18 24 30 VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, tm = 200 µs 1@ 6 cm 2 cooling area 2Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs. Page 3 2004-02-02 BTS 3134 D Electrical Characteristics Symbol Parameter at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. t on - 60 100 t off - 60 100 -dV DS/dt on - 0.3 1.5 dV DS/dt off - 0.7 1.5 Dynamic Characteristics Turn-on time VIN to 90% I D: RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V µs V/µs Protection Functions1) Thermal overload trip temperature Tjt 150 175 - °C Input current protection mode IIN(Prot) 80 160 300 µA Input current protection mode IIN(Prot) - 130 300 EAS 3 - - J VSD - 1.0 - V Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 3 A, Tj = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage IF = 15 A, tm = 250 µs, VIN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Page 4 2004-02-02 BTS 3134 D Block diagram Inductive and overvoltage output clamp Terms RL V I IN 1 D IN 2 ID VDS D Z Vbb HITFET VIN S S 3 HITFET Short circuit behaviour Input circuit (ESD protection) V IN Gate Drive Input I Source/ Ground IN I D T t t t j t Page 5 2004-02-02 BTS 3134 D 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TC) resp. RON=f(Tj); I D=3A; VIN=10V Ptot = f(TA) @ R thJA=55 K/W 3 100 m max. W Rthjc = 1.5 K/W RDS(on) 80 Ptot 2 SMD @ 6cm2 1.5 70 typ. 60 50 40 1 30 20 0.5 10 0 -50 -25 0 25 50 75 100 °C 0 -50 150 -25 0 25 50 75 100 125 °C TA;TC 3 On-state resistance 4 Typ. input threshold voltage RON=f(Tj); ID=3A; VIN=5V VIN(th) = f(T j); ID = 0.7 mA; V DS = 12V 2 110 m V max. 90 1.6 80 typ. 70 VGS(th) RDS(on) 175 Tj 1.4 1.2 60 1 50 0.8 40 0.6 30 20 0.4 10 0.2 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Tj -25 0 25 50 75 100 °C 150 Tj Page 6 2004-02-02 BTS 3134 D 5 Typ. transfer characteristics 6 Typ. short circuit current ID=f(VIN ); VDS=12V; TJstart=25°C I D(lim) = f(Tj); VDS=12V Parameter: VIN 30 A A I D(SC) 30 ID 20 20 Vin=10V 15 15 10 10 5 5 0 0 1 2 3 4 5 6 7 8 V 0 -50 10 5V -25 0 25 50 75 100 125 °C VIN 175 Tj 7 Typ. output characteristics 8 Typ. off-state drain current ID=f(VDS ); TJstart =25°C IDSS = f(Tj ) Parameter: VIN 35 11 µA A max. 10V 9 7V 25 8 ID I DSS 6V 5V 20 7 6 4V 5 15 4 10 Vin=3V 3 2 5 typ. 1 0 0 1 2 3 4 V 0 -50 6 VDS -25 0 25 50 75 100 125 °C 175 Tj Page 7 2004-02-02 BTS 3134 D 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb =12 V, no heatsink Z thJA=f(tp) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T 10 2 40 K/W A D=0.5 -40°C 10 1 ZthJA I D(lim) 25 0.2 0.1 30 25°C 0.05 10 0 0.02 0.01 20 85°C 10 -1 15 10 150°C 10 -2 5 0 0 Single pulse 1 2 3 10 -3 -7 -6 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 10 10 5 ms s 10 tp t 11 Determination of ID(lim) ID(lim) = f(t); tm = 200µs Parameter: TJstart 40 A I D(lim) 30 -40°C 25 25°C 20 85°C 15 150°C 10 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Page 8 2004-02-02 3 BTS 3134 D Package Ordering Code P-TO252-3-1 Q67060-S7433-A001 6.5 +0.15 -0.10 2.3 +0.05 -0.10 4.57 0.51 min 0.15 max per side 0.9 +0.08 -0.04 B 0.8 ±0.15 9.9 ±0.5 6.22 -0.2 1 ±0.1 A 5.4 ±0.1 3x 0.75 ±0.1 0...0.15 0.5 +0.08 -0.04 2.28 1 ±0.1 0.25 M A B 0.1 GPT09051 All metal surfaces tin plated, except area of cut. Page 9 2004-02-02 BTS 3134 D Revision History : Previous version : Page 3 2004-02-02 2002-09-04 Subjects (major changes since last revision) VIN(th) test conditions from ID=0.7mA to ID=1.4mA For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com HITFET®, SIPMOS® are registered trademarks of Infineon Technologies AG. Edition 2004-02-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 10 2004-02-02