INFINEON Q67000-S283

SIPMOS Small-Signal Transistor
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BSP 135
VDS
600 V
ID
0.100 A
RDS(on) 60 Ω
N channel
Depletion mode
High dynamic resistance
Available grouped in VGS(th)
Type
Ordering
Code
Tape and Reel Information Pin Configuration Marking Package
BSP 135 Q62702-S655 E6327: 1000 pcs/reel
1
2
3
4
G
D
S
D
BSP 135 SOT-223
BSP 135 Q67000-S283 E6906: 1000 pcs/reel
VGS(th) selected in groups:
(see page 219)
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
600
V
Drain-gate voltage, RGS = 20 kΩ
VDGR
600
Gate-source voltage
VGS
± 14
Gate-source peak voltage, aperiodic
Vgs
± 20
Continuous drain current, TA = 44 ˚C
ID
0.100
A
Pulsed drain current,
TA = 25 ˚C
ID puls
0.30
Max. power dissipation,
TA = 25 ˚C
Ptot
1.7
W
Operating and storage temperature range
Tj, Tstg
– 55 … + 150
˚C
Thermal resistance 1) chip-ambient
chip-soldering point RthJS
RthJA
RthJS
72
12
K/W
DIN humidity category, DIN 40 040
–
E
–
IEC climatic category, DIN IEC 68-1
–
55/150/56
1)
Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.
Semiconductor Group
1
09.96
BSP 135
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
600
–
–
− 1.8
− 1.5
− 0.7
–
–
–
–
100
200
–
10
100
–
40
60
0.01
0.04
–
Static Characteristics
Drain-source breakdown voltage
VGS = − 3 V, ID = 0.25 mA
V(BR)DSS
Gate threshold voltage
VDS = 3 V, ID = 1 mA
VGS(th)
Drain-source cutoff current
VDS = 600 V, VGS = − 3 V
Tj = 25 ˚C
Tj = 125 ˚C
IDSS
Gate-source leakage current
VGS = 20 V, VDS = 0
IGSS
Drain-source on-resistance
VGS = 0 V, ID = 0.01 A
RDS(on)
V
nA
µA
nA
Ω
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × RDS(on)max, ID = 0.01 A
gfs
Input capacitance
VGS = − 3 V, VDS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = − 3 V, VDS = 25 V, f = 1 MHz
Coss
Reverse transfer capacitance
VGS = − 3 V, VDS = 25 V, f = 1 MHz
Crss
Turn-on time ton, (ton = td(on) + tr)
S
pF
–
110
150
–
8
12
–
3
5
td(on)
–
4
6
VDD = 30 V, VGS = − 3 V ... + 5 V, RGS = 50 Ω,
ID = 0.2 A
tr
–
10
15
Turn-off time toff, (toff = td(off) + tf)
td(off)
–
15
20
VDD = 30 V, VGS = − 3 V ... + 5 V, RGS = 50 Ω,
ID = 0.2 A
tf
–
20
30
Semiconductor Group
2
ns
BSP 135
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
–
–
0.100
–
–
0.300
Reverse Diode
Continuous reverse drain current
TA = 25 ˚C
IS
Pulsed reverse drain current
TA = 25 ˚C
ISM
Diode forward on-voltage
IF = 0.2 A, VGS = 0
VSD
VGS(th) Grouping
Symbol
∆VGS(th)
Range of VGS(th)
Threshold voltage selected in groups
P
R
S
T
U
V
W
A
1):
–
0.90
Limit Values
Unit
Test Condition
–
min.
max.
–
0.15
V
– 0.95
– 1.08
– 1.21
– 1.34
– 1.47
– 1.60
– 1.73
– 0.80
– 0.93
– 1.06
– 1.19
– 1.32
– 1.45
– 1.58
V
V
V
V
V
V
V
VGS(th)
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
Package Outline
SOT-223
Dimensions in mm
Semiconductor Group
V
3
1.30
VDS1 = 0.2 V;
VDS2 = 3 V;
ID = 1 mA
BSP 135
Characteristics
at Tj = 25 ˚C, unless otherwise specified
Total power dissipation Ptot = f (TA)
Safe operating area ID = f (VDS)
parameter: D = 0.01, TC = 25 ˚C
Typ. output characteristics ID = f (VDS)
parameter: tp = 80 µs
Typ. drain-source on-resistance
RDS(on) = f (ID)
parameter: VGS
Semiconductor Group
4
BSP 135
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max.
Typ. forward transconductance gfs = f (ID)
parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs
Drain-source on-resistance
RDS(on) = f (Tj)
parameter: ID = 0.01 A, VGS = 0 V, (spread)
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Semiconductor Group
5
BSP 135
Gate threshold voltage VGS(th) = f (Tj)
parameter: VDS = 3 V, ID = 1 mA, (spread)
Forward characteristics of reverse diode
IF = f (VSD)
parameter: tp = 80 µs, Tj, (spread)
Drain current ID = f (TA)
parameter: VGS ≥ 3 V
Transient thermal impedance ZthJA = f (tp)
parameter: D = tp / T
Semiconductor Group
6
BSP 135
Safe operating area ID = f (VDS)
parameter: D = 0, TC = 25 ˚C
Drain-source breakdown voltage
V(BR) DSS = b × V(BR)DSS (25 ˚C)
Semiconductor Group
7