ATP207 D

Ordering number : ENA1319A
ATP207
N-Channel Power MOSFET
http://onsemi.com
40V, 65A, 9.1mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
4.5V drive
Halogen free compliance
Large current
Slim package
Protection diode in
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (PW≤10μs)
Allowable Power Dissipation
Unit
40
PW≤10μs, duty cycle≤1%
V
65
A
195
A
50
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
35
mJ
33
A
Avalanche Current *2
Tc=25°C
V
±20
Note : *1 VDD=10V, L=50μH, IAV=33A
*2 L≤50μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP207-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP207
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
3
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
1.7
2,4
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/91708PA TIIM TC-00001572 No. A1319-1/7
ATP207
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=17A, VGS=4.5V
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Turn-OFF Delay Time
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
RDS(on)1
Ratings
min
typ
Unit
max
40
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VDS=10V, ID=33A
ID=33A, VGS=10V
Input Capacitance
Rise Time
Conditions
V
1.5
12
1
μA
±10
μA
2.6
20
V
S
7
9.1
mΩ
11
15.5
mΩ
2710
pF
330
pF
Crss
220
pF
td(on)
tr
27
ns
290
ns
170
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=20V, VGS=10V, ID=65A
110
ns
54
nC
14
nC
11
IS=65A, VGS=0V
1.0
nC
1.2
V
Switching Time Test Circuit
10V
0V
VDD=20V
VIN
ID=33A
RL=0.61Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP207
P.G
50Ω
S
Ordering Information
Device
ATP207-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1319-2/7
ATP207
ID -- VDS
V
40
30
50
40
30
VGS=3.5V
20
10
Tc=25°C
Single pulse
10
1.0
1.5
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
25
33A
15
10
5
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
10
Tc=
7
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
C
25°
5°C
--2
75°C
5
3
2
7
5
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5
4.5
5.0
15
10
=33A
V, I D
=10.0
VGS
5
--40
--20
0
20
40
60
80
100
120
IS -- VSD
100
7
5
3
2
10
7
5
3
2
tf
100
7
5
tr
td(on)
3
160
VGS=0V
Single pulse
0
0.2
0.4
0.6
0.8
1.0
1.2
Ciss, Coss, Crss -- VDS
1.4
IT14028
f=1MHz
Ciss
3
td(off)
140
IT14026
5
2
6.0
A
7
VDD=20V
VGS=10V
3
5.5
IT14024
=17
V, I D
=4.5
VGS
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
5 7 100
IT14027
SW Time -- ID
1000
4.0
20
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
1.0
3
0.1
3.5
Case Temperature, Tc -- °C
3
2
3.0
Single pulse
0
--60
16
VDS=0V
Single pulse
5
2.5
RDS(on) -- Tc
IT14025
| yfs | -- ID
7
2.0
1.5
Gate-to-Source Voltage, VGS -- V
0
2
1.0
25
20
0
0.5
0
IT14023
Tc=25°C
Single pulse
ID=17A
0
2.0
5°C
25°C
--25°C
0.5
Tc=
7
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
25
°
C
20
C
4.0V
5°C
50
60
--25°
60
70
Tc=
7
Drain Current, ID -- A
10.
V
70
80
4.5V
1 6 .0
Drain Current, ID -- A
80
VDS=10V
Single pulse
90
0V
90
ID -- VGS
100
6.0
8.0V
100
2
1000
7
5
Coss
3
Crss
2
2
100
10
0.1
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT14029
7
0
5
10
15
20
25
30
35
Drain-to-Source Voltage, VDS -- V
40
IT14030
No. A1319-3/7
ATP207
VGS -- Qg
10
3
2
7
6
10
0
20
30
40
50
Total Gate Charge, Qg -- nC
PD -- Tc
60
30
20
10
0
40
60
80
100
3
5
7 1.0
120
Case Temperature, Tc -- °C
140
160
IT14010
2
3
5
7 10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT14032
EAS -- Ta
120
40
20
2
IT14031
50
0
Tc=25°C
Single pulse
0.1
0.1
Avalanche Energy derating factor -- %
60
Allowable Power Dissipation, PD -- W
1.0
7
5
3
2
1
0
Operation in this area
is limited by RDS(on).
3
2
n
2
0μ
s
io
3
3
2
10
7
5
s
10
m
0m s
s
10
at
er
4
ID=65A
op
5
100
7
5
PW≤10μs
10
μs
10
1m
C
Drain Current, ID -- A
8
IDP=195A
D
Gate-to-Source Voltage, VGS -- V
9
ASO
5
VDS=20V
ID=65A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT14011
No. A1319-4/7
ATP207
Taping Specification
ATP207-TL-H
No. A1319-5/7
ATP207
Outline Drawing
ATP207-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1319-6/7
ATP207
Note on usage : Since the ATP207 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A1319-7/7
Similar pages