ATP206 D

Ordering number : ENA1395A
ATP206
N-Channel Power MOSFET
http://onsemi.com
40V, 40A, 16mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
4.5V drive
Halogen free compliance
Large current
Slim package
Protection diode in
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (PW≤10μs)
Allowable Power Dissipation
Unit
40
PW≤10μs, duty cycle≤1%
V
40
A
120
A
40
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
26
mJ
20
A
Avalanche Current *2
Tc=25°C
V
±20
Note : *1 VDD=10V, L=100μH, IAV=20A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP206-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP206
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
3
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
1.7
2,4
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/10709PA MS IM TC-00001774 No. A1395-1/7
ATP206
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Conditions
Ratings
min
typ
Unit
max
40
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
V
1.5
9
VDS=10V, ID=20A
ID=20A, VGS=10V
ID=10A, VGS=4.5V
VDS=20V, f=1MHz
1
μA
±10
μA
2.6
15
V
S
12
16
mΩ
20
28
mΩ
1630
pF
205
pF
Reverse Transfer Capacitance
Crss
110
pF
Turn-ON Delay Time
td(on)
19
ns
Rise Time
tr
110
ns
Turn-OFF Delay Time
td(off)
83
ns
Fall Time
tf
73
ns
Total Gate Charge
Qg
27
nC
Gate-to-Source Charge
Qgs
7.0
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=20V, VGS=10V, ID=40A
5.2
IS=40A, VGS=0V
0.99
nC
1.2
V
Switching Time Test Circuit
10V
0V
VDD=20V
VIN
ID=20A
RL=1Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP206
P.G
50Ω
S
Ordering Information
Device
ATP206-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1395-2/7
ATP206
VGS=3.5V
0.5
1.0
1.5
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Single pulse
Tc=25°C
35
30
25
20
ID=10A
20A
15
10
5
0
2
3
4
5
6
7
8
9
10
11
12
13
14
Gate-to-Source Voltage, VGS -- V
=
Tc
5°C
--2
3
75
°C
2
1.0
5 7 1.0
2
3
5 7 10
2
Drain Current, ID -- A
3
5 7
20
A
=20
V, I D
0
.
0
=1
VGS
15
10
5
--20
0
20
tf
3
tr
td(on)
2
40
60
80
100
120
140
160
IT14336
IS -- VSD
VGS=0V
Single pulse
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
IT14338
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss, Coss, Crss -- pF
5
6.0
A
2
7
5.5
IT14334
3
2
100
5.0
=10
V, I D
5
.
4
=
VGS
25
5
td (off)
4.5
Diode Forward Voltage, VSD -- V
VDD=20V
VGS=10V
3
4.0
Single pulse
IT14337
SW Time -- ID
5
3.5
30
0.01
7
5
3
2
0.001
5
3
3.0
35
100
7
5
3
2
7
2
2.5
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
2.0
RDS(on) -- Tc
0
--60 --40
16
C
25°
7
3
0.1
Switching Time, SW Time -- ns
15
1.5
40
2
10
1.0
Gate-to-Source Voltage, VGS -- V
VDS=10V
3
0.5
IT14335
| yfs | -- ID
5
0
IT14333
RDS(on) -- VGS
40
0
2.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
Tc=
--25
°C
75°C
10
5
0
20
--25°
C
10
25°
C
15
30
C
4.0V
--25
°
20
40
5°C
25°C
25
Tc=
75°
C
Drain Current, ID -- A
8 .0
50
V
30
Tc=
7
6.0V
VDS=10V
V
4.5
16.0V 10.0
Drain Current, ID -- A
V
35
ID -- VGS
60
Tc=25°C
25°
C
ID -- VDS
40
Ciss
1000
7
5
3
Coss
2
Crss
10
100
7
7
5
0.1
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT14339
5
0
5
10
15
20
25
30
35
Drain-to-Source Voltage, VDS -- V
40
IT14340
No. A1395-3/7
ATP206
VGS -- Qg
10
8
7
6
5
4
3
3
2
5
10
15
25
20
Total Gate Charge, Qg -- nC
PD -- Tc
35
30
25
20
15
10
5
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT14343
1m
s
DC
op
er
s
ati
on
Tc=25°C
Single pulse
2
3
5
7 1.0
2
3
5
7 10
2
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
40
0
Operation in
this area is
limited by RDS(on).
IT14341
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
45
0m
m
0.1
0.1
30
10
10
3
2
1
PW≤10μs
1
10 0μs
0μ
s
s
10
7
5
1.0
7
5
0
ID=40A
3
2
2
0
IDP=120A
100
7
5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
ASO
3
2
VDS=20V
ID=40A
3
5
7
IT14342
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1395-4/7
ATP206
Taping Specification
ATP206-TL-H
No. A1395-5/7
ATP206
Outline Drawing
ATP206-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1395-6/7
ATP206
Note on usage : Since the ATP206 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1395-7/7
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