ILD1205T/1206T/1207T Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package, 110 °C Rated FEATURES A1 8C C2 7E A3 6C C4 5E i179018 DESCRIPTION The 110 °C rated ILD1205T/1206T/1207T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD1205T/1206T/ 1207T come in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V. • Operating temperature from - 55 °C to + 110 °C • Two Channel Coupler • SOIC-8 Surface Mountable Package • Isolation Test Voltage, 4000 VRMS • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS • UL - File No. E52744 System Code Y • CUL - File No. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-2(VDE0884) Available with Option 1 APPLICATIONS • AC Adapters • PLCs • Switch Mode Power Supplies • DC/DC Converters • Microprocessor I/O Interfaces • General impedance matching circuits ORDER INFORMATION PART REMARKS ILD1205T CTR 40 - 80 %, SOIC-8 ILD1206T CTR 63 - 125 %, SOIC-8 ILD1207T CTR 100 - 200 %, SOIC-8 Note: For additional information on the available options refer to Option Information. Document Number 83599 Rev. 1.9, 20-Apr-07 For technical support, please contact: [email protected] www.vishay.com 1 ILD1205T/1206T/1207T Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT IF 30 mA VR 6.0 V IFSM 1.0 A INPUT Continuous forward current per channel Peak reverse voltage Peak pulsed current 1.0 µs, 300 pps Pdiss Power dissipation Derate linearly from 25 °C 50 mW 0.5 mW/°C 70 V OUTPUT Collector-emitter voltage VCE Power dissipation per channel Pdiss Derate linearly from 25 °C 125 mW 1.25 mW/°C COUPLER Isolation test voltage t = 1.0 s Operating temperature Total package dissipation ambient (2 LEDs + 2 detectors, 2 channels) VISO 4000 VRMS Tamb - 55 to + 110 °C Ptot 300 mW 4.0 mW/°C Tstg - 55 to + 150 °C Derate linearly from 25 °C Storage temperature Note: Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. 1) 150 120 Ptotal (mW) Phototransistor 90 IR - Diode 60 30 0 0 17544 20 40 60 80 100 120 Ambient Temperature (°C) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 For technical support, please contact: [email protected] Document Number 83599 Rev. 1.9, 20-Apr-07 ILD1205T/1206T/1207T Vishay Semiconductors ELECTRICAL CHARACTERISTICS1) PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT VF 1.2 1.55 V 100 µA INPUT Forward voltage IF = 10 mA Reverse current VR = 6.0 V IR 0.1 VR = 0 CI 25 Capacitance pF OUTPUT VCE = 10 V, IF = 0 ICEO Collector-emitter breakdown voltage IC = 100 µA BVCEO 70 Emitter-collector breakdown voltage IE = 10 µA BVECO 7.0 Collector-emitter saturation voltage IF = 10 mA, IC = 2.5 mA VCEsat VCE = 0 CCE Collector-emitter leakage current Collector-emitter capacitance 5.0 50 nA V V 0.4 10 V pF COUPLER VCE = 5.0 V, IF = 10 mA DC Current Transfer Ratio ILD1205T CTR 40 80 ILD1206T CTR 63 125 % ILD1207T CTR 100 200 % CIO Capacitance (input-output) 0.5 % pF Note: 1) T amb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. SWITCHING CHARACTERISTICS PARAMETER SYMBOL MIN. Turn-on time IC = 2.0 mA, RL = 100 Ω, VCC = 5.0 V TEST CONDITION PART TYPE MAX UNIT ton 5.0 µs Turn-off time IC = 2.0 mA, RL = 100 Ω, VCC = 5.0 V toff 4.0 µs Input toff ton V CC = 5 V Input RL V OUT tpdoff tpdon Output td tr ts tr 10 % 10 % 50 % 50 % 90 % 90 % iild205t_08 Figure 2. Switching Test Circuit Document Number 83599 Rev. 1.9, 20-Apr-07 For technical support, please contact: [email protected] www.vishay.com 3 ILD1205T/1206T/1207T Vishay Semiconductors SAFETY AND INSULATION RATINGS1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYPE Climatic Classification (according to IEC 68 part 1) MAX UNIT 55/110/21 Polution Degree (DIN VDE 0109) 2.0 Comparative tracking index per DIN IEC112/VDE 0303 part 1, group IIIa per DIN VDE 6110 175 399 mm 175 399 VIOTM VIOTM 6000 V VIORM VIORM 560 V RIO Resistance, input to output Ω 100 PSI 350 mW ISI 150 mA TSI 165 °C Creeapage 4.0 mm Clearance 4.0 mm Note: 1) As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 30 60 0 °C 50 - 55 °C 50 °C 40 25 °C 30 20 10 0 0.6 19149 0.8 1.0 1.2 1.4 1.6 1.8 Vf-Forward Voltage (V) Figure 3. Forward Current vs. Forward Voltage www.vishay.com 4 Collector Current (mA) If-Forward Current (mA) 110 °C IF = 30 mA 25 IF= 20 mA 20 IF = 15 mA 15 IF = 10 mA 10 IF = 5 mA 5 0 0 1 2 3 4 5 6 7 8 9 10 VCE (V) Figure 4. VCE vs. IC, (Non-Saturated) For technical support, please contact: [email protected] Document Number 83599 Rev. 1.9, 20-Apr-07 ILD1205T/1206T/1207T 10000 1.2 1.1 1000 IF = 10 mA 1.0 VCE = 40 V 100 Normalized CTR Collector to Emitter Leakage current ICE0 (nA) Vishay Semiconductors VCE = 24 V 10 VCE = 12 V 1 0.1 0.9 0.8 IF = 5 mA 0.7 0.6 0.5 IF = 1 mA 0.4 0.3 Normalized to I F = 10 mA Tamb = 25 °C 0.2 0.01 0.1 0.001 0.0 - 55 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 - 55 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 Tamb (°C) Tamb (°C) Figure 5. Collector to Emitter Leakage Current vs. Ambient Temperature Normalized CTR vs. Ambient Temperature (Non-Saturated, VCE = 5 V) 1000 20 16 IF = 25 mA 14 12 10 IF = 10 mA 8 6 IF = 5 mA 4 IF = 2 mA 2 0 0.0 0.1 0.2 IF = 1 mA 0.3 0.4 Cut-off-Frequency fctr (kHz) Collector Current (mA) 18 ILD1205,6 100 + 25 °C + 50 °C 0 °C 10 VCE = 5 V, Tamb = 25 °C 1 0.1 0.5 1.0 VCE (V) Figure 6. VCE vs. IC, (Saturated) 1000 IF = 5 mA IF = 10 mA ton, toff (usec) Normalized CTR 1.1 1.0 0.7 0.6 IF = 1 mA 0.5 0.4 0.3 0.2 0.1 0.0 100.0 Figure 8. Cut-off-Frequency (- 3 dB) vs. Collector Current 1.2 0.9 0.8 10.0 Ic (mA) 100 toff 10 Normalized to IF = 10 mA Tamb = 25 °C - 55 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 Tamb (°C) Figure 7. Normalized CTR vs. Ambient Temperature (Saturated, VCE = 0.4 V) Document Number 83599 Rev. 1.9, 20-Apr-07 ton 1 0.1 1 10 100 Load Resistance (kΩ) Figure 9. ton, toff vs. Load Resistance (100 Ω to 20000 Ω) For technical support, please contact: [email protected] www.vishay.com 5 ILD1205T/1206T/1207T Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) 0.120 ± 0.002 (3.05 ± 0.05) R 0.010 (0.13) 0.050 (1.27) 0.014 (0.36) C L 0.154 ± 0.002 (3.91 ± 0.05) 0.240 (6.10) 0.036 (0.91) 0.045 (1.14) 0.170 (4.32) 0.260 (6.6) 0.016 (0.41) Pin One I.D. 0.230 ± 0.002 (5.84 ± 0.05) 7° 0.015 ± 0.002 (0.38 ± 0.05) 40° 0.0585 ± 0.002 (1.49 ± 0.05) ISO Method A 0.004 (0.10) 0.008 (0.20) 0.008 (0.20) 0.050 (1.27) Typ. 0.040 (1.02) i178020 www.vishay.com 6 0.020 ± 0.004 (0.51 ± 0.10) 2 Plcs. 5° Max. R0.010 (0.25) Max. For technical support, please contact: [email protected] 0.125 ± 0.002 (3.18 ± 0.05) Lead coplanarity ± 0.001 Max. Document Number 83599 Rev. 1.9, 20-Apr-07 ILD1205T/1206T/1207T Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 83599 Rev. 1.9, 20-Apr-07 For technical support, please contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1