Si7888DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D Optimized for “High-Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 15.7 0.020 @ VGS = 4.5 V 12.1 APPLICATIONS D DC/DC Converters PowerPAK SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View Ordering Information: Si7888DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS Avalanche Current IAS L= 0.1 0 1 mH Single Pulse Avalanche Energy TA = 25_C Maximum Power Dissipationa TA = 70_C 9.4 12.5 7.5 Operating Junction and Storage Temperature Range A "50 4.1 1.5 20 EAS PD V 15.7 IDM A 20 mJ 5.0 1.8 3.2 1.1 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 21 25 55 70 2.4 3.0 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71876 S-31727—Rev. B, 18-Aug-03 www.vishay.com 1 Si7888DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.80 IGSS Typ Max Unit 2 V VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 70_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 50 A VGS = 10 V, ID = 12.4 A 0.010 0.012 VGS = 4.5 V, ID = 9.6 A 0.016 0.020 gfs VDS = 15 V, ID = 12.4 A 27 VSD IS = 2.6 A, VGS = 0 V 0.75 1.2 8.7 10.5 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 2.4 nC 3.5 1 1.5 td(on) 10 20 tr 11 20 24 50 10 20 50 75 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 5.0 V, ID = 12.4 A 0.2 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.6 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 3V 10 30 20 TC = 125_C 10 25_C 2V 0 0 1 2 3 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 4 0 0.0 0.5 1.0 1.5 - 55_C 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 71876 S-31727—Rev. B, 18-Aug-03 Si7888DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1200 1000 0.020 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.025 VGS = 4.5 V 0.015 VGS = 10 V 0.010 Ciss 800 600 Coss 400 Crss 0.005 200 0.000 0 0 10 20 30 40 0 50 5 Gate Charge 20 25 30 On-Resistance vs. Junction Temperature 1.8 10 VDS = 15 V ID = 12.4 A 8 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 6 4 2 VGS = 10 V ID = 12.4 A 1.6 1.4 1.2 1.0 0.8 0 0 2 4 6 8 10 12 14 0.6 - 50 16 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 0.04 0.03 ID = 12.4 A 0.02 0.01 0.00 1 0.00 25 TJ - Junction Temperature (_C) 50 I S - Source Current (A) 10 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 71876 S-31727—Rev. B, 18-Aug-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7888DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power Threshold Voltage 0.4 50 ID = 250 mA 40 - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 - 0.4 30 20 - 0.6 10 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ - Temperature (_C) Safe Operating Area 100 rDS(on) Limited IDM Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 ID(on) Limited 1 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 TC = 25_C Single Pulse 0.1 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 55_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71876 S-31727—Rev. B, 18-Aug-03 Si7888DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 71876 S-31727—Rev. B, 18-Aug-03 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 www.vishay.com 5