Si7970DP Vishay Siliconix New Product Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.019 @ VGS = 10 V 10.2 0.026 @ VGS = 4.5 V 8.7 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAK Dual MOSFET for Space Savings 100% Rg Tested Package APPLICATIONS Primary Side Switch − Low Power Quarter Buck Intermediate BUS Switch PowerPAK SO-8 D1 S1 6.15 mm 1 D2 5.15 mm G1 2 S2 3 G2 4 G1 D1 8 G2 D1 7 D2 6 D2 5 S1 Bottom View S2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si7970DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Single Avalanche Current IS L = 0.1 mH Single Avalanche Energy TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range 6.5 8.2 5.2 40 A 2.9 1.2 IAS 30 EAS 45 PD V 10.2 IDM mJ 3.5 1.4 2.2 0.9 TJ, Tstg Unit −55 to 150 W C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 26 35 60 85 2.2 2.7 Unit C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72826 S-40431—Rev. A, 15-Mar-04 www.vishay.com 1 Si7970DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1 IGSS Typ Max Unit 3 V VDS = 0 V, VGS = "20 V "100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V mA A VGS = 10 V, ID = 10.2 A 0.016 0.019 VGS = 4.5 V, ID = 8.7 A 0.021 0.026 gfs VDS = 15 V, ID = 10.2 A 26 VSD IS = 2.9 A, VGS = 0 V 0.8 1.2 23 35 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS =20 V, VGS = 10 V, ID = 10.2 A nC 4.4 5.6 f = 1 MHz 2.3 3.9 td(on) 15 25 tr 15 25 50 75 16 25 30 60 VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 1 IF = 2.9 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 6 V 32 5V I D − Drain Current (A) I D − Drain Current (A) 32 24 16 8 24 16 TC = 125C 8 25C 4V −55C 0 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72826 S-40431—Rev. A, 15-Mar-04 Si7970DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) On-Resistance vs. Drain Current 0.04 0.03 VGS = 4.5 V VGS = 10 V 0.02 1600 Ciss 1200 800 Coss 0.01 400 0.00 0 0 8 16 24 32 Capacitance 2000 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.05 40 Crss 0 10 ID − Drain Current (A) Gate Charge 40 On-Resistance vs. Junction Temperature 1.8 VDS = 20 V ID = 10.2 A VGS = 10 V ID = 10.2 A 1.6 8 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 30 VDS − Drain-to-Source Voltage (V) 10 6 4 2 1.4 1.2 1.0 0.8 0 0 5 10 15 20 0.6 −50 25 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.06 r DS(on) − On-Resistance ( W ) TJ = 150C 10 TJ = 25C 1 0.0 25 TJ − Junction Temperature (C) 40 I S − Source Current (A) 20 0.05 0.04 ID = 10.2 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72826 S-40431—Rev. A, 15-Mar-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7970DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 100 0.2 80 ID = 250 mA −0.2 60 Power (W) V GS(th) Variance (V) −0.0 −0.4 −0.6 40 −0.8 20 −1.0 −1.2 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 100 600 Time (sec) TJ − Temperature (C) 100 Safe Operating Area, Junction-To-Ambient rDS(on) Limited IDM Limited P(t) = 0.0001 I D − Drain Current (A) 10 P(t) = 0.001 1 0.1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 TA = 25C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 60C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72826 S-40431—Rev. A, 15-Mar-04 Si7970DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Document Number: 72826 S-40431—Rev. A, 15-Mar-04 www.vishay.com 5