Si7948DP Vishay Siliconix New Product Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 4.6 0.100 @ VGS = 4.5 V 4.0 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAK Dual MOSFET for Space Savings APPLICATIONS Automotive - ABS - Coil Driver - Load Switch PowerPAK SO-8 D1 S1 6.15 mm 1 Package D2 5.15 mm G1 2 S2 3 G2 4 G1 D1 8 G2 D1 7 D2 6 D2 5 S1 Bottom View S2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si7948DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Single Avalanche Current IS L = 0.1 mH Single Avalanche Energy TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range 3.0 3.6 2.4 15 A 2.7 1.2 IAS 15 EAS 11 PD V 4.6 IDM mJ 3.3 1.4 2.1 0.9 TJ, Tstg Unit -55 to 150 W C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 29 38 60 85 4.0 5.2 Unit C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72403 S-31867—Rev. A, 15-Sep-03 www.vishay.com 1 Si7948DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1 IGSS Typ Max Unit 3 V VDS = 0 V, VGS = "20 V "100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 15 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 4.6 A 0.060 0.075 VGS = 4.5 V, ID = 4.0 A 0.080 0.100 gfs VDS = 15 V, ID = 4.6 A 6 VSD IS = 2.7 A, VGS = 0 V 0.8 1.2 12 20 W S V Dynamicb Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 15 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.5 Gate Resostamce Rg 1.5 td(on) 7 20 tr 8 25 15 40 7 20 30 60 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 30 V, RL = 2 W ID ^ 15 A, VGEN = 10 V, RG = 2.5 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 2 IF = 2.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Output Characteristics Transfer Characteristics 15 15 VGS = 10 thru 4 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 9 6 3V 3 9 6 TC = 125C 3 25C -55C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 72403 S-31867—Rev. A, 15-Sep-03 Si7948DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 800 700 0.10 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.06 0.04 Ciss 600 500 400 300 Coss 200 0.02 Crss 100 0.00 0 0 3 6 9 12 15 0 4 ID - Drain Current (A) 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 20 2.2 VDS = 30 V ID = 15 A r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 8 16 12 8 4 VGS = 10 V ID = 10 A 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 4 8 12 16 20 0.6 -50 24 -25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.200 40 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.175 TJ = 150C 10 TJ = 25C 0.150 0.125 ID = 4.6 A 0.100 0.075 0.050 0.025 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72403 S-31867—Rev. A, 15-Sep-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7948DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 100 0.4 80 ID = 250 mA TA = 25C Single Pulse -0.0 Power (W) V GS(th) Variance (V) 0.2 -0.2 -0.4 60 40 -0.6 20 -0.8 -1.0 -50 -25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 Time (sec) TJ - Temperature (C) 100 Safe Operating Area, Junction-to-Case IDM Limited 10 ms I D - Drain Current (A) 10 rDS(on) Limited 100 ms 1 ms 1 10 ms 0.1 ID(on) Limited 10 s BVDSS Limited 0.01 0.1 100 ms 1s TA = 25C Single Pulse 1 10 dc, 100 S 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 60C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72403 S-31867—Rev. A, 15-Sep-03 Si7948DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 100 Square Wave Pulse Duration (sec) Document Number: 72403 S-31867—Rev. A, 15-Sep-03 www.vishay.com 5