INTEGRATED CIRCUITS DATA SHEET TEA5570 RF/IF circuit for AM/FM radio Product specification File under Integrated Circuits, IC01 September 1987 Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 GENERAL DESCRIPTION The TEA5570 is a monolithic integrated radio circuit for use in portable receivers and clock radios. The IC is also applicable to mains-fed AM and AM/FM receivers and car radio-receivers. Apart from the AM/FM switch function the IC incorporates for AM a double balanced mixer, 'one-pin' oscillator, i.f. amplifier with a.g.c. and detector, and a level detector for tuning indication. The FM circuitry comprises i.f. stages with a symmetrical limiter for a ratio detector. A level detector for mono/stereo switch information and/or indication complete the FM part. Features • Simple d.c. switching for AM to FM by only one d.c. contact to ground (no switch contacts in the i.f. channel, a.f. or level detector outputs) • AM and FM gain control • Low current consumption (Itot = 6 mA) • Low voltage operation (VP = 2,7 to 9 V) • Ability to handle large AM signals; good i.f. suppression • Applicable for inductive, capacitive and diode tuning • Double smoothing of a.g.c. line • Short-wave range up to 30 MHz • Lumped or distributed i.f. selectivity with coil and/or ceramic filters • AM and a.g.c. output voltage control • Distribution of PCB wiring provides good frequency stability • Economic design for 'AM only' receivers. QUICK REFERENCE DATA (at Tamb = 25 °C) Supply voltage VP = V7-16 typ. 5,4 V Supply current I7 typ. 6,2 mA at Vo = 10 mV Vi typ. 1,7 µV at S/N = 26 dB Vi typ. 16 µV A.F. output voltage at Vi = 1 mV Vo typ. 100 mV Total harmonic distortion at Vi = 1 mV THD typ. 0,5 % Vi typ. 110 µV S/N typ. 65 dB A.F. output voltage at Vi = 1 mV Vo typ. 100 mV Total harmonic distortion at Vi = 1 mV THD typ. 0,3 % AM suppression at Vi = 10 mV AMS typ. 50 dB AM performance (pin 2) for m = 0,3 Sensitivity FM performance (pin 1) for ∆f = ± 22,5 kHz limiting sensitivity, −3 dB Signal-to-noise ratio for Vi = 1 mV PACKAGE OUTLINE 16-lead DIL; plastic (SOT38); SOT38-1; 1996 July 25. September 1987 2 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors RF/IF circuit for AM/FM radio September 1987 3 Product specification TEA5570 Fig.1 Block diagram. Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Supply voltage (pin 7) VP = V7-16 max. 12 V Voltage at pins 4, 5, 9 and 10 to pin 16 (ground) Vn-16 max. 12 V Voltage range at pin 8 V8-16 Current into pin 5 I5 max. Total power dissipation Ptot see Fig.2 Storage temperature range Tstg −55 to + 150 °C Operating ambient temperature range Tamb −30 to + 85 °C Fig.2 Power derating curve. September 1987 4 VP ± 0,5 V 3 mA Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 D.C. CHARACTERISTICS VP = 6 V; Tamb = 25 °C; measured in Fig.10; unless otherwise specified PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply (pin 7) Supply voltage (note 1) VP = V7-16 2,4 5,4 9,0 V at pin 1 (FM) V1-16 − 1,42 − V at pin 1; −I1 = 50 µA (FM) V1-16 − 1,28 − V at pins 2 and 3 (AM) V2,3-16 − 1,42 − V at pin 6 V6-16 − 0,7 − V at pin 11 V11-16 − 1,4 − V at pin 13 V13-16 − 0,7 − V at pin 14 V14-16 − 4,3 − V Voltages Currents Supply current I7 4,2 6,2 8,2 mA Current supplied from pin 1 (FM) −I1 − − 50 µA Current supplied from pin 12 −I12 − − 20 µA Current supplied from pin 15 −I15 − 30 − µA Current into pin 4 (AM) I4 − 0,6 − mA Current into pin 5 (FM) (note 4) I5 − 0,35 − mA Current into pin 8 (AM) I8 − 0,3 − mA Current into pins 9, 10 (FM) I9,10 − 0,65 − mA Current into pin 14 I14 − 0,4 − mA Power consumption P − 40 − mW September 1987 5 Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 A.C. CHARACTERISTICS AM performance VP = 6 V; Tamb = 25 °C; r.f. condition: fi = 1 MHz, m = 0,3, fm = 1 kHz; transfer impedance of the i.f. filter |Ztr| = v6/I4 = 2,7 kΩ; measured in Fig.10; unless otherwise specified PARAMETER SYMBOL MIN. TYP. MAX. UNIT R.F. sensitivity (pin 2) at Vo = 30 mV Vi 3,5 5,0 7,0 µV at S + N/N = 6 dB Vi − 1,3 at S + N/N = 26 dB Vi − 16 20 µV at S + N/N = 50 dB Vi − 1 − mV Signal handling (THD ≤ 10% at m = 0,8) Vi 200 − − mV A.F. output voltage at Vi = 1 mV Vo 80 100 125 mV µV Total harmonic distortion at Vi = 100 µV to 100 mV (m = 0,3) THD − 0,5 − % at Vi = 2 mV (m = 0,8) THD − 1,0 2,5 % at Vi = 200 mV (m = 0,8) THD − 4,0 10 % α 26 35 − dB V8-16 120 160 200 mV I12 − 200 230 µV I.F. suppression at Vo = 30 mV (note 2) Oscillator voltage (pin 8; note 3) at fosc = 1455 kHz Indicator current (pin 12) at Vi = 1 mV FM performance VP = 6 V; Tamb = 25 °C; i.f. condition: fi = 10,7 MHz, ∆f = ± 22,5 kHz, fm = 1 kHz; transfer impedance of the i.f. filter |Ztr| = v6/i5 = 275 Ω; measured in Fig.10; unless otherwise specified PARAMETER SYMBOL MIN. TYP. MAX. UNIT I.F. part I.F. sensitivity (adjustable; note 4) Input voltage Vi 90 110 130 µV at S + N/N = 26 dB Vi − 6 − µV at S + N/N = 65 dB Vi − 1 − mV Vo 80 100 125 mV at −3 dB before limiting A.F. output voltage at Vi = 1 mV Total harmonic distortion at Vi = 1 mV THD − 0,3 − % AM suppression (note 5) AMS − 50 − dB September 1987 6 Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 PARAMETER SYMBOL MIN. TYP. MAX. UNIT Indicator/level detector (pin 12) I12 − 250 325 µA at Vi = 300 µV V12-16 − 0,25 − V at Vi = V12-16 − 1,0 − V −I3 − − 400 µA Indicator current D.C. output voltage 2 mV AM to FM switch Switching current at V3-16 < 1 V Notes to the characteristics 1. Oscillator operates at V7-16 > 2,25 V. V i1 2. I.F. suppression is defined as the ratio α = 20 log -------- where: Vi1 is the input voltage at f = 455 kHz and Vi2 is the V i2 input voltage at f = 1 MHz. 3. Oscillator voltage at pin 8 can be preset by Rosc (see Fig.10). V 3 – 16 4. Maximum current into pin 5 can be adjusted by R1 (see Fig.10); I5 = ---------------- − I3 when V3-16 = 800 mv; I3 = 400 µA. R1 5. AM suppression is measured with fm = 1 kHz, m = 0,3 for AM; fm = 400 Hz, ∆f = ± 22,5 kHz for FM. Facility adaptation Facility adaptation is achieved as follows (see Fig.10): FACILITY COMPONENT FM sensitivity V 3 – 16 R1 fixes the current at pin 5 (I5 = ---------------- − 400 µA) R1 (gain adjustable ± 10 dB; see note 4) AM sensitivity R11 and coil tapping AM oscillator biasing Rosc AM output voltage R7, R11 AM a.g.c. setting R7 September 1987 7 Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 Typical graphs reference level 0 dB = 100 mV (1) A.G.C. range (figure of merit, FOM). Fig.3 Signal, noise and distortion as a function of input voltage (Vi). Measured at fi = 1 MHz in test circuit Fig.10. sensitivity (Vi) at Vo = 30 mV; m = 0,3. − − − output voltage (Vo) at Vi = 2 mV; m = 0,3. Fig.4 Sensitivity (Vi), output voltage (Vo) as a function of temperature behaviour (Tamb). Measured at fi = 1 MHz in test circuit Fig.10. September 1987 8 Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 sensitivity (Vi) at Vo = 30 V; m = 0,3: 6,0 V application. − - − - − sensitivity (Vi) at Vo = 30 mV; m = 0,3: 4,5 V application. − − − − − output voltage (Vo) at Vi = 0,2 mV; m = 0,3. Fig.5 Sensitivity (Vi) and output voltage (Vo) as a function of supply voltage (VP). Measured at fi = 1 MHz in test circuit Fig.10, for application VP = 6 V. Also shown is the sensitivity for VP = 4,5 V application (Fig.16). Fig.6 September 1987 Signal, noise and distortion as a function of input voltage (Vi). Measured at fi = 10,7 MHz in test circuit Fig.10. 9 Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 sensitivity at −3 dB limiting. − − − output voltage (Vo) at Vi = 1 mV; ∆f = ± 22 kHz. Fig.7 Sensitivity (Vi), output voltage (Vo) as a function of temperature behaviour (Tamb). Measured at fi = 10,7 MHz in test circuit Fig.10. sensitivity at −3 dB limiting: VP = 6,0 V application. − - − - − - sensitivity at −3 dB limiting: VP = 4,5 V application. − − − − output voltage (Vo) at Vi = 1 mV; ∆f = ± 22,5 kHz. Fig.8 September 1987 Sensitivity (Vi) and output voltage (Vo) as a function of supply voltage (VP). Measured at fi = 10,7 MHz in test circuit Fig.10. 10 Philips Semiconductors Product specification RF/IF circuit for AM/FM radio Fig.9 TEA5570 Indicator output current (I12) and d.c. output voltage (V12-16): AM fi = 1 MHz; FM fi = 10,7 MHz as a function of input voltage (Vi). Measured in Fig.10; VP = 6 V; R12-16 = 5 kΩ. September 1987 11 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors RF/IF circuit for AM/FM radio September 1987 12 Product specification Fig.10 Test circuit. TEA5570 Coil data The transfer impedance of the i.f. filter is: AM: |Ztr| = v6/i4 = 2,7 kΩ (SFZ 455A). FM: |Ztr| = v6/i5 = 275 Ω (SFE 10,7 MS). See also Figs 11, 12, 13 and 14. Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 COIL DATA AM i.f. coils (Fig.10) N1 = 73 N2 = 73 N3 = 9 C16 = 180 pF (internal) Wire = 0,07 mm dia. Fig.11 I.F. bandpass filter (L1). TOKO sample no. 7 MC-7 P. N1 = 90 N2 = 7 Wire = 0,07 mm dia. Fig.12 Oscillator coil (L2). TOKO sample no. 7 BR-7 P. September 1987 13 Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 FM i.f. coils (Fig.10) N1 = 5 N2 = 5 N3 = 4 C19 = 82 pF (internal) Wire = 0,1 mm dia. Fig.13 Primary ratio detector coil (L3). TOKO sample no. 119 AN-7 P. N1 = 2 N2 = 6 N3 = 6 C20 = 68 pF (internal) Wire = 0,1 mm dia. Fig.14 Secondary ratio detector coil (L4). TOKO sample no. 119 AN-7 P. September 1987 14 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors Figs 15 and 17 show the circuit diagrams for the application of 6 V AM MW/LW and 4,5 V AM/FM channels respectively, using the TEA5570. Fig.16 shows the circuitry of the TEA5570. RF/IF circuit for AM/FM radio September 1987 APPLICATION INFORMATION 15 Coil data N1 = 73 L4 N1 = 146 N2 = N3 = C = 180 pF 9 9 N1 = 90 N2 = 6 C = 180 pF Fig.15 Typical application circuit for 6 V AM MW/LW reception using the TEA5570. TEA5570 N2 = 73 L5 Product specification L3 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors RF/IF circuit for AM/FM radio September 1987 16 Product specification TEA5570 Fig.16 TEA5570 circuit diagram. This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors RF/IF circuit for AM/FM radio September 1987 17 Coil data L2 N1 = 3 L3 N1 = 33 N2 = 8 N2 = 113 N3 = 1 N3 = C = 82 pF C = 180 pF 9 L4 N1 = 90 N2 = 6 L5 N1 = 33 L6 N1 = 50 N2 = 113 N2 = 50 N3 = N3 = 4,5 9 N4 = 6,5 C = 82 pF Product specification DETAILED APPLICATION INFORMATION WILL BE SUPPLIED ON REQUEST. TEA5570 Fig.17 Typical application circuit for 4,5 V AM/FM reception using the TEA5570 with coils and single-tuned ratio detector (with silicon diodes). Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 PACKAGE OUTLINE DIP16: plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 9 16 pin 1 index E 1 8 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.7 0.51 3.7 1.40 1.14 0.53 0.38 0.32 0.23 21.8 21.4 6.48 6.20 2.54 7.62 3.9 3.4 8.25 7.80 9.5 8.3 0.254 2.2 inches 0.19 0.020 0.15 0.055 0.045 0.021 0.015 0.013 0.009 0.86 0.84 0.26 0.24 0.10 0.30 0.15 0.13 0.32 0.31 0.37 0.33 0.01 0.087 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT38-1 050G09 MO-001AE September 1987 EIAJ EUROPEAN PROJECTION ISSUE DATE 92-10-02 95-01-19 18 Philips Semiconductors Product specification RF/IF circuit for AM/FM radio TEA5570 The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1987 19