DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections • Frequencies up to 700 MHz. APPLICATIONS PIN SYMBOL DESCRIPTION 1 d drain 2 s source 3 g gate • LF, HF and DC amplifiers. DESCRIPTION 1 handbook, halfpage 2 General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. 3 d g s MAM257 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VDS drain-source voltage CONDITIONS MIN. TYP. MAX. − − ±30 UNIT V VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V −0.25 − −8 V VGSO gate-source voltage open drain − − −30 V IDSS drain current VDS = 15 V; VGS = 0 BF245A 2 − 6.5 mA BF245B 6 − 15 mA BF245C 12 − 25 mA Ptot total power dissipation Tamb = 75 °C − − 300 mW yfs forward transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz; Tamb = 25 °C 3 − 6.5 mS Crs reverse transfer capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz; Tamb = 25 °C − 1.1 − pF 1996 Jul 30 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±30 V VGDO gate-drain voltage open source − −30 V VGSO gate-source voltage open drain − −30 V ID drain current − 25 mA IG gate current − 10 mA Ptot total power dissipation up to Tamb = 75 °C; − 300 mW up to Tamb = 90 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm × 10 mm. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE in free air thermal resistance from junction to ambient UNIT 250 K/W 200 K/W STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER UNIT − V gate-source cut-off voltage ID = 10 nA; VDS = 15 V −0.25 −8.0 V gate-source voltage ID = 200 µA; VDS = 15 V BF245A −0.4 −2.2 V BF245B −1.6 −3.8 V BF245C −3.2 −7.5 V BF245A 2 6.5 mA BF245B 6 15 mA BF245C 12 25 mA VGS = −20 V; VDS = 0 − −5 nA VGS = −20 V; VDS = 0; Tj = 125 °C − −0.5 µA VGSoff VGS drain current gate cut-off current VDS = 15 V; VGS = 0; note 1 Note 1. Measured under pulse conditions: tp = 300 µs; δ ≤ 0.02. 1996 Jul 30 MAX. −30 gate-source breakdown voltage IGSS MIN. IG = −1 µA; VDS = 0 V(BR)GSS IDSS CONDITIONS 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cis input capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 4 − pF Crs reverse transfer capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 1.1 − pF Cos output capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 1.6 − pF gis input conductance VDS = 15 V; VGS = 0; f = 200 MHz − 250 − µS gos output conductance VDS = 15 V; VGS = 0; f = 200 MHz − 40 − µS yfs forward transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz 3 − 6.5 mS VDS = 15 V; VGS = 0; f = 200 MHz − 6 − mS yrs reverse transfer admittance VDS = 15 V; VGS = 0; f = 200 MHz − 1.4 − mS yos output admittance VDS = 15 V; VGS = 0; f = 1 kHz − 25 − µS fgfs cut-off frequency VDS = 15 V; VGS = 0; gfs = 0.7 of its value at 1 kHz − 700 − MHz F noise figure VDS = 15 V; VGS = 0; f = 100 MHz; RG = 1 kΩ (common source); input tuned to minimum noise − 1.5 − dB MGE785 −10 MGE789 6 handbook, halfpage handbook, halfpage ID IGSS (mA) 5 (nA) −1 4 typ −10−1 3 2 −10−2 1 −10−3 0 50 100 Tj (°C) 0 −4 150 VDS = 0; VGS = −20 V. Fig.2 1996 Jul 30 −2 VGS (V) 0 VDS = 15 V; Tj = 25 °C. Gate leakage current as a function of junction temperature; typical values. Fig.3 4 Transfer characteristics for BF245A; typical values. Philips Semiconductors Product specification N-channel silicon field-effect transistors MBH555 6 BF245A; BF245B; BF245C MGE787 15 handbook, halfpage handbook, halfpage ID (mA) 5 ID (mA) VGS = 0 V 4 10 3 −0.5 V 2 5 −1 V 1 −1.5 V 0 0 10 0 −4 20 VDS (V) VDS = 15 V; Tj = 25 °C. Fig.4 −2 VGS (V) 0 VDS = 15 V; Tj = 25 °C. Output characteristics for BF245A; typical values. Fig.5 MBH553 15 Transfer characteristics for BF245B; typical values. MGE788 30 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 10 20 −0.5 V −1 V 5 10 −1.5 V −2 V −2.5 V 0 0 10 VDS (V) 0 −10 20 VDS = 15 V; Tj = 25 °C. Fig.6 1996 Jul 30 −5 VGS (V) 0 VDS = 15 V; Tj = 25 °C. Output characteristics for BF245B; typical values. Fig.7 5 Transfer characteristics for BF245C; typical values. Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C MBH554 30 MGE775 4 handbook, halfpage handbook, halfpage ID (mA) ID (mA) 3 VGS = 0 V 20 VGS = 0 V 2 −0.5 V 1 −1 V −1 V 10 −2 V −3 V −1.5 V −4 V 0 0 10 0 20 VDS (V) 0 VDS = 15 V; Tj = 25 °C. Fig.8 50 100 Tj (°C) 150 VDS = 15 V. Output characteristics for BF245C; typical values. Fig.9 MGE776 Drain current as a function of junction temperature; typical values for BF245A. MGE779 20 15 handbook, halfpage handbook, halfpage ID (mA) ID (mA) 16 10 VGS = 0 V 12 VGS = 0 V 8 −2 V 5 −1 V 4 −2 V −4 V 0 0 0 50 100 Tj (°C) 0 150 50 100 Tj (°C) 150 VDS = 15 V. VDS = 15 V. Fig.10 Drain current as a function of junction temperature; typical values for BF245B. Fig.11 Drain current as a function of junction temperature; typical values for BF245C. 1996 Jul 30 6 Philips Semiconductors Product specification N-channel silicon field-effect transistors MGE778 103 handbook, halfpage gis (µA/V) 102 102 MGE780 104 handbook, halfpage bis (mA/V) gis BF245A; BF245B; BF245C 10 brs (µA/V) Crs (pF) 10 103 1 102 10−1 103 10 Crs 1 bis brs 10 1 10 102 f (MHz) 10 10−1 102 f (MHz) 10−2 103 VDS = 15 V; VGS = 0; Tamb = 25 °C. VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.13 Common source reverse admittance as a function of frequency; typical values. Fig.12 Input admittance; typical values. MGE782 10 −bfs (mA/V) MGE783 103 handbook, halfpage handbook, gfs, halfpage 10 gos (µA/V) 8 bos 102 bos (mA/V) 1 6 gfs gos 4 10−1 10 2 −bfs 0 10 102 f (MHz) 1 103 10 VDS = 15 V; VGS = 0; Tamb = 25 °C. f (MHz) 10−2 103 VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.14 Common-source forward transfer admittance as a function of frequency; typical values. 1996 Jul 30 102 Fig.15 Common-source output admittance as a function of frequency; typical values. 7 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C MGE781 MGE777 6 1.5 handbook, halfpage handbook, halfpage Cis (pF) Crs (pF) 4 typ typ 1 2 0 0 −2 −4 −6 0.5 −8 −10 VGS (V) −2 0 VDS = 20 V; f = 1 MHz; Tamb = 25 °C. −4 −6 −8 −10 VGS (V) VDS = 20 V; f = 1 MHz; Tamb = 25 °C. Fig.16 Input capacitance as a function of gate-source voltage; typical values. Fig.17 Reverse transfer capacitance as a function of gate-source voltage; typical values. MGE791 8 MGE784 −10 handbook, halfpage handbook, V halfpage GSoff at ID = 10 nA |yfs| (mA/V) (V) BF245C BF245B 6 −8 BF245A −6 4 −4 2 BF245C −2 BF245B 0 0 5 10 −0 20 15 BF245A 0 ID (mA) 20 30 IDSS at VGS = 0 (mA) VDS = 15 V; f = 1 kHz; Tamb = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.18 Forward transfer admittance as a function of drain current; typical values. 1996 Jul 30 10 Fig.19 Gate-source cut-off voltage as a function of drain current; typical values. 8 Philips Semiconductors Product specification N-channel silicon field-effect transistors MGE790 103 handbook, halfpage BF245A; BF245B; BF245C MGE786 3 handbook, halfpage RDSon F (dB) (kΩ) 102 2 typ 10 1 BF245A 1 BF245B BF245C 10−1 0 −1 −2 −3 0 −4 1 10 102 VGS (V) VDS = 0; f = 1 kHz; Tamb = 25 °C. 103 VDS = 15 V; VGS = 0; RG = 1 kΩ; Tamb = 25 °C. Input tuned to minimum noise. Fig.20 Drain-source on-state resistance as a function of gate-source voltage; typical values. 1996 Jul 30 f (MHz) Fig.21 Noise figure as a function of frequency; typical values. 9 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C PACKAGE OUTLINE handbook, full pagewidth 0.40 min 4.2 max 1.7 1.4 5.2 max 12.7 min 0.48 0.40 1 4.8 max 2 2.54 3 0.66 0.56 2.5 max Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.22 TO-92 variant. 1996 Jul 30 10 (1) MBC015 - 1 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 11