DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A FEATURES • Low noise • Interchangeability of drain and source connections • High gain. handbook, halfpage 3 DESCRIPTION g N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT23 PIN DESCRIPTION 1 source 2 drain 3 gate 1 d s 2 Top view MAM385 Marking codes: PMBF4416: P6A. PMBF4416A: M16. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS CONDITIONS MIN. MAX. UNIT drain-source voltage PMBF4416 − 30 V PMBF4416A − 35 V 5 15 mA 250 mW IDSS drain-source current VDS = 15 V; VGS = 0 Ptot total power dissipation up to Tamb = 25 °C − VGS(off) gate-source cut-off voltage VDS = 15 V; ID = 1 nA Yfs April 1995 PARAMETER PMBF4416 − −6 V PMBF4416A −2.5 −6 V 4.5 7.5 mS common-source transfer admittance 2 VDS = 15 V; VGS = 0; f = 1 kHz Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VDS CONDITIONS MIN. MAX. UNIT drain-source voltage VGSO PMBF4416 − 30 V PMBF4416A − 35 V PMBF4416 − −30 V PMBF4416A − −35 V PMBF4416 − −30 V PMBF4416A − −35 V − 10 mA gate-source voltage VGDO gate-drain voltage IG DC forward gate current Ptot total power dissipation − 250 mW Tstg storage temperature up to Tamb = 25 °C (note 1) −65 +150 °C Tj junction temperature − 150 °C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER THERMAL RESISTANCE from junction to ambient (note 1) 500 K/W Note 1. Mounted on an FR4 printed-circuit board. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)GSS PARAMETER gate-source breakdown voltage CONDITIONS MIN. MAX. UNIT VDS = 0; IG = −1 µA PMBF4416 −30 − V PMBF4416A −35 − V IGSS reverse gate leakage current VDS = 0; VGS = −15 V − 1 nA IDSS drain current VDS = 15 V; VGS = 0 5 15 mA VGSS gate-source forward voltage VDS = 0; IG = 1 mA − 1 V VGS(off) gate-source cut-off voltage VDS = 15 V; ID = 1 nA − −6 V −2.5 −6 V 4.5 7.5 mS PMBF4416 − 50 µS PMBF4416A − 50 µS PMBF4416 PMBF4416A Yfs common source transfer admittance VDS = 15 V; VGS = 0 Yos common source output admittance VDS = 15 V; VGS = 0 April 1995 3 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A DYNAMIC CHARACTERISTICS Tj = 25 °C; VDS = 15 V; VGS = 0. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cis input capacitance f = 1 MHz − − 4 pF Cos output capacitance f = 1 MHz − − 2 pF Crs feedback capacitance f = 1 MHz − − 0.8 pF gis common source input conductance f = 100 MHz − − 100 µS gfs common source transfer conductance grs common source feedback conductance f = 400 MHz − − 1 mS f = 100 MHz − 5.2 − mS f = 400 MHz 4 5 − mS f = 100 MHz − −8 − µS f = 400 MHz − −100 − µS − − 75 µS gos common source output conductance f = 100 MHz f = 400 MHz − − 100 µS Vn equivalent input noise voltage f = 100 Hz − 5 − nV/√Hz MRC168 handbook,25 halfpage MRC169 handbook, 10 halfpage I DSS Y fs (mS) (mA) 20 8 15 6 10 4 5 2 0 0 2 0 4 6 –VGS(off) (V) 0 2 6 –VGS(off) (V) VDS = 15 V; Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.2 Fig.3 April 1995 4 Drain current as a function of gate-source cut-off voltage; typical values. 4 Common source transfer admittance as a function of gate-source cut-off voltage; typical values. Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A MRC167 80 MRC163 12 handbook, halfpage handbook, halfpage Gos ( µ S) ID (mA) VGS = 0 V 60 8 40 –0.5 V 4 20 –1V 0 0 1 2 3 4 5 0 6 0 4 8 12 –VGS(off) (V) 16 Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.4 VDS (V) Fig.5 Typical output characteristics. Common source output conductance as a function of gate-source cut-off voltage; typical values. MRC164 handbook, 12 halfpage MRC158 1 handbook, halfpage C rs (pF) ID (mA) 0.8 8 0.6 0.4 4 0.2 0 –5 –4 –3 –2 0 –10 –1 0 V (V) GS VDS = 15 V; Tj = 25 °C. –6 –4 –2 0 VGS (V) VDS = 15 V; Tj = 25 °C. Fig.6 Typical input characteristics. April 1995 –8 Fig.7 Typical feedback capacitance. 5 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A MRC157 MRC165 4 handbook,10 halfpage 3.5 handbook, halfpage –I G Cis (pF) 3 (pA) I D = 1 mA 10 3 2.5 10 2 2 10 0.1 mA 1.5 1 1 I GSS –1 10 0.5 –2 0 –10 –8 –6 –4 10 –2 0 VGS (V) 0 4 8 12 16 20 VDG (V) VDS = 15 V; Tj = 25 °C. Fig.8 Typical input capacitance. Fig.9 MRC166 300 handbook, halfpage Gate current as a function of drain-gate voltage, typical values. MRC160 handbook,100 halfpage gis , b is Ptot (mW) (mS) 10 b is 200 1 g is 100 0.1 00 50 100 Tamb ( oC) 0.01 10 150 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.10 Power derating curve. April 1995 Fig.11 Common source input conductance; typical values. 6 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A MRC159 100 MRC162 handbook,100 halfpage handbook, halfpage –g rs , –brs (mS) 10 g fs , –bfs (mS) –brs 10 g fs 1 0.1 –b fs 1 –g rs 0.01 0.1 10 100 0.001 10 1000 f (MHz) 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 °C. VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.12 Common source transfer conductance; typical values. Fig.13 Common source feedback conductance; typical values. SPICE parameters for PMBF4416 September 1992; version 1.0. MRC161 100 1 VTO = −3.553 V µA/V2 handbook, halfpage gos , bos (mS) 2 BETA = 792.6 3 LAMBDA = 18.46 m/V 10 4 RD = 7.671 Ω 5 RS = 7.671 Ω 6 IS = 333.4 aA 7 CGSO = 2.920 pF 8 CGDO = 2.261 pF 9 PB = 1.090 V 10 (note 1) FC = 500.0 m b os 1 0.1 g os Note 0.01 10 100 f (MHz) 1. Parameter not extracted; default value. 1000 VDS = 15 V; VGS = 0; Tamb = 25 °C. Fig.14 Common source output conductance; typical values. April 1995 7 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 April 1995 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 9