PHILIPS BSS51

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSS50; BSS51; BSS52
NPN Darlington transistors
Product specification
Supersedes data of 1997 May 13
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V)
1
emitter
• Integrated diode and resistor.
2
base
3
collector, connected to case
DESCRIPTION
APPLICATIONS
• Industrial high gain amplification.
handbook, halfpage
1
3
2
DESCRIPTION
2
NPN Darlington transistor in a TO-39 metal package.
PNP complements: BSS61 and BSS62.
3
1
MAM311
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCES
PARAMETER
collector-base voltage
CONDITIONS
TYP.
MAX.
UNIT
open emitter
BSS50
−
−
60
V
BSS51
−
−
80
V
BSS52
−
−
90
V
BSS50
−
−
45
V
BSS51
−
−
60
V
collector-emitter voltage
VBE = 0
−
−
80
V
−
−
1
A
−
−
0.8
W
Tcase ≤ 25 °C
−
−
5
W
IC = 500 mA; VCE = 10 V
2000
−
−
IC = 500 mA; VCE = 5 V; f = 100 MHz
−
200
−
BSS52
IC
collector current
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
1997 Sep 03
MIN.
Tamb ≤ 25 °C
2
MHz
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
BSS50
−
60
V
BSS51
−
80
V
−
90
V
BSS50
−
45
V
BSS51
−
60
V
BSS52
−
80
V
−
5
V
BSS52
VCES
MIN.
collector-emitter voltage
VBE = 0
VEBO
emitter-base voltage
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IB
base current (DC)
−
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
0.8
W
Tcase ≤ 25 °C
−
5
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
open collector
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
1997 Sep 03
CONDITIONS
in free air
3
VALUE
UNIT
220
K/W
35
K/W
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICES
PARAMETER
CONDITIONS
BSS50
VBE = 0; VCE = 45 V
−
−
50
nA
BSS51
VBE = 0; VCE = 60 V
−
−
50
nA
BSS52
VBE = 0; VCE = 80 V
−
−
50
nA
−
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 4 V
DC current gain
VCE = 10 V
VCEsat
−
IC = 500 mA
2000 −
−
−
−
1.3
V
IC = 500 mA; IB = 0.5 mA; Tj = 200 °C
−
−
1.3
V
IC = 1 A; IB = 1 mA
−
−
1.6
V
IC = 1 A; IB = 1 mA; Tj = 200 °C
−
−
2.3
V
collector-emitter saturation voltage
IC = 1 A; IB = 4 mA
−
−
1.6
V
IC = 1 A; IB = 4 mA; Tj = 200 °C
−
−
1.6
V
IC = 500 mA; IB = 0.5 mA
−
−
1.9
V
BSS51
IC = 1 A; IB = 1 mA
−
−
2.2
V
BSS50; BSS52
IC = 1 A; IB = 4 mA
−
−
2.2
V
VBEsat
base-emitter saturation voltage
VBEsat
base-emitter saturation voltage
fT
1000 −
collector-emitter saturation voltage
BSS50; BSS52
VBEon
IC = 150 mA
collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA
BSS51
VCEsat
TYP. MAX. UNIT
collector cut-off current
hFE
VCEsat
MIN.
base-emitter on-state voltage
transition frequency
IC = 150 mA; VCE = 10 V
1.3
−
1.65
V
IC = 500 mA; VCE = 10 V
1.4
−
1.75
V
IC = 500 mA; VCE = 5 V; f = 100 MHz
−
200
−
MHz
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
−
0.5
−
µs
ICon = 1 A; IBon = 1 mA; IBoff = −1 mA
−
0.4
−
µs
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
−
1.3
−
µs
ICon = 1 A; IBon = 1 mA; IBoff = −1 mA
−
1.5
−
µs
Switching times (between 10% and 90% levels)
ton
toff
turn-on time
turn-off time
1997 Sep 03
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
α
j
w M A M B M
B
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
mm
6.60
6.35
5.08
OUTLINE
VERSION
SOT5/11
1997 Sep 03
b
D
D1
j
L
w
α
14.2
12.7
0.2
45°
k
0.48 9.39 8.33 0.85 0.95
0.41 9.08 8.18 0.75 0.75
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
TO-39
5
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 03
6
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
NOTES
1997 Sep 03
7
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© Philips Electronics N.V. 1997
SCA55
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117047/00/03/pp8
Date of release: 1997 Sep 03
Document order number:
9397 750 02815