ETC BSR51

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BSR50; BSR51; BSR52
NPN Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 12
Philips Semiconductors
Product specification
NPN Darlington transistors
BSR50; BSR51; BSR52
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V)
1
base
• Integrated diode and resistor.
2
collector
3
emitter
DESCRIPTION
APPLICATIONS
• Industrial high gain amplification.
handbook, halfpage
DESCRIPTION
2
1
1
2
NPN Darlington transistor in a TO-92; SOT54 plastic
package. PNP complements: BSR60, BSR61 and BSR62.
3
3
MAM307
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCES
PARAMETER
collector-base voltage
CONDITIONS
TYP.
MAX.
UNIT
open emitter
BSR50
−
−
60
V
BSR51
−
−
80
V
BSR52
−
−
90
V
BSR50
−
−
45
V
BSR51
−
−
60
V
collector-emitter voltage
VBE = 0
−
−
80
V
−
−
1
A
Tamb ≤ 25 °C
−
−
0.83
W
IC = 150 mA; VCE = 10 V
1000
−
−
IC = 500 mA; VCE = 10 V
2000
−
−
IC = 500 mA; VCE = 5 V; f = 100 MHz
−
200
−
BSR52
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
1997 May 12
MIN.
2
MHz
Philips Semiconductors
Product specification
NPN Darlington transistors
BSR50; BSR51; BSR52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BSR50
−
60
V
BSR51
−
80
V
BSR52
−
90
V
BSR50
−
45
V
BSR51
−
60
V
BSR52
−
80
V
−
5
V
collector-emitter voltage
VBE = 0
VEBO
emitter-base voltage
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IB
base current (DC)
−
100
mA
open collector
Ptot
total power dissipation
−
0.83
W
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 May 12
3
VALUE
UNIT
150
K/W
Philips Semiconductors
Product specification
NPN Darlington transistors
BSR50; BSR51; BSR52
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICES
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
collector cut-off current
BSR50
VBE = 0; VCE = 45 V
−
−
50
nA
BSR51
VBE = 0; VCE = 60 V
−
−
50
nA
BSR52
VBE = 0; VCE = 80 V
−
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 4 V
−
−
50
nA
hFE
DC current gain
VCE = 10 V; see Fig.2
IC = 150 mA
1000
−
−
IC = 500 mA
2000
−
−
−
−
1.3
V
VCEsat
collector-emitter saturation voltage IC = 0.5 A; IB = 0.5 mA
VCEsat
collector-emitter saturation voltage
BSR51
IC = 1 A; IB = 1 mA
−
−
1.6
V
BSR50; BSR52
IC = 1 A; IB = 4 mA
−
−
1.6
V
IC = 0.5 A; IB = 0.5 mA
−
−
1.9
V
BSR51
IC = 1 A; IB = 1 mA
−
−
2.2
V
BSR50; BSR52
IC = 1 A; IB = 4 mA
−
−
2.2
V
200
−
MHz
−
−
500
ns
−
−
1300
ns
VBEsat
base-emitter saturation voltage
VBEsat
base-emitter saturation voltage
fT
transition frequency
IC = 500 mA; VCE = 5 V; f = 100 MHz −
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
toff
turn-off time
1997 May 12
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BSR50; BSR51; BSR52
MGD838
5000
handbook, full pagewidth
hFE
4000
3000
2000
1000
0
10−1
1
102
10
VCE = 10 V.
Fig.2 DC current gain; typical values.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = −1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
1997 May 12
5
oscilloscope
IC (mA)
103
Philips Semiconductors
Product specification
NPN Darlington transistors
BSR50; BSR51; BSR52
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1997 May 12
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN Darlington transistors
BSR50; BSR51; BSR52
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 12
7
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© Philips Electronics N.V. 1997
SCA54
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117047/00/02/pp8
Date of release: 1997 May 12
Document order number:
9397 750 02279