PHILIPS 2PD601AQW

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
2PD601AW
NPN general purpose transistor
Preliminary specification
2002 Jun 26
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PD601AW
FEATURES
PINNING
• High collector current (max. 100 mA)
PIN
• Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification.
DESCRIPTION
3
handbook, halfpage
NPN transistor in an SC-70 (SOT323) plastic package.
PNP complement: 2PB709AW.
3
1
MARKING
MARKING CODE(1)
TYPE NUMBER
2PD601AQW
*6D
2PD601ARW
*6E
2PD601ASW
*6F
2
1
2
Top view
Note
Fig.1
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
MAM062
Simplified outline SC-70 (SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
2002 Jun 26
2
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PD601AW
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
625
K/W
note 1
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 60 V
−
10
nA
IE = 0; VCB = 60 V; Tj = 150 °C
−
5
µA
nA
IEBO
emitter-base cut-off current
IC = 0; VEB = 5 V
−
10
hFE
DC current gain
IC = 100 mA; VCE = 2 V; note 1
90
−
DC current gain
IC = 2 mA; VCE = 10 V
2PD601AQW
160
260
2PD601ARW
210
340
2PD601ASW
290
460
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 10 mA; note 1
−
500
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
3.5
pF
fT
transition frequency
IC = 2 mA; VCE = 10 V;
f = 100 MHz
100
−
MHz
2PD601ARW
120
−
MHz
2PD601ASW
140
−
MHz
2PD601AQW
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2002 Jun 26
3
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PD601AW
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2002 Jun 26
REFERENCES
IEC
JEDEC
EIAJ
SC-70
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PD601AW
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Jun 26
5
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PD601AW
NOTES
2002 Jun 26
6
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PD601AW
NOTES
2002 Jun 26
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2002
Jun 26
Document order number:
9397 750 09757