PHILIPS NE4558N

Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
DESCRIPTION
NE/SA/SE4558
PIN CONFIGURATIONS
The 4558 is a dual operational amplifier that is internally
compensated. Excellent channel separation allows the use of a dual
device in a single amp application, providing the highest packaging
density. The NE/SA/SE4558 is a pin-for-pin replacement for the
RC/RM/RV4558.
D and N Packages
AOUT 1
AIN– 2
AIN+ 3
FEATURES
V– 4
• 2MHz unity gain bandwidth guaranteed
• Supply voltage ±22V for SE4558 and ±18V for NE4558
• Short-circuit protection
• No frequency compensation required
• No latch-up
• Large common-mode and differential voltage ranges
• Low power consumption
A
–+
B
+–
8
V+
7
BOUT
6
BIN–
5
BIN+
ORDERING INFORMATION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Plastic Small Outline (SO) Package
DESCRIPTION
0 to +70°C
NE4558D
0174C
8-Pin Plastic Dual In-Line Package (DIP)
0 to +70°C
NE4558N
0404B
8-Pin Plastic Dual In-Line Package (DIP)
-40 to +85°C
SA4558N
0404B
8-Pin Plastic Dual In-Line Package (DIP)
-40 to +85°C
SA4558D
0404B
8-Pin Plastic Dual In-Line Package (DIP)
-55 to +125°C
SE4558N
0404B
EQUIVALENT SCHEMATIC
8
v+
–
OUYPUT 1(7)
2(6)
INPUTS
3(5)
+
4 V–
August 31, 1994
65
853-0840 13721
Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
NE/SA/SE4558
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
UNIT
SE4558
±22
V
NE4558, SA4558
±18
V
N package
1160
mW
D package
780
mW
Differential input voltage
±30
V
VIN
Input voltage2
±15
V
TSTG
Storage temperature range
-65 to +150
°C
TA
Operating ambient temperature range
SE4558
-55 to +125
°C
SA4558
-40 to +85
°C
NE4558
0 to +70
°C
300
°C
VCC
PARAMETER
Supply voltage
PD MAX
Maximum power dissipation,
TA=25°C (Still air)1
TSOLD
Lead soldering temperature (10sec max)
Output short-circuit duration3
Indefinite
NOTES:
1. Derate above 25°C at the following rates:
N package at 9.3mW/°C
D package at 6.2mW/°C
2. For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.
3. Short-circuit may be to ground on one amp only. Rating applies to +125°C case temperature or +75°C ambient temperature for NE4558 and
to +85°C ambient temperature for SA4558.
DC ELECTRICAL CHARACTERISTICS
VCC=+15V, TA= 25°C unless otherwise specified.
SYMBOL
VOS
PARAMETER
Input offset voltage
∆VOS/∆T
IOS
AV
RS≤10kΩ
Over temp.
Output voltage swing
Over temp.
40
Typ
Max
5.0
2.0
6.0
200
30
200
20
500
200
mV
µV/°C
4
40
UNIT
nA
pA/°C
500
nA
40
pA/°C
0.3
1.0
0.3
1.0
MΩ
RL≥2kΩ
VOUT=±10V
50,00
0
300,0
00
20,00
0
300,0
00
V/V
RL≥10kΩ
RL≥2kΩ
±12
±10
±14
±13
±12
±10
±14
±13
V
V
±12
±13
±12
±13
V
70
100
70
100
dB
Input voltage range
CMRR
Common-mode rejection ratio
RS≤10kΩ
PSRR
Power supply rejection ratio
RS≤10kΩ
ISC
Short-circuit current
August 31, 1994
1.0
Min
20
Over temp.
VIN
Power consumption (all amplifiers)
Max
4
Input resistance
Large-signal voltage gain
SA/NE4558
Typ
50
Input bias current
∆IB/∆T
RIN
SE4558
Min
Input offset current
∆IOS/∆T
IBIAS
TEST CONDITIONS
5
RL=∞
66
10
150
25
60
120
170
5
µV/V
10
150
25
60
mA
120
170
mW
Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
NE/SA/SE4558
DC ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
PARAMETER
Transient response (unity gain)
tR
SR
TEST CONDITIONS
SE4558
Min
Typ
SA/NE4558
Max
Min
Typ
Max
UNIT
VIN=20mV
RL=2kΩ
CL≤100pF
Rise time
100
100
Overshoot
15.0
15.0
ns
%
Slew rate (unity gain)
RL≥2kΩ
1.0
1.0
V/µs
Channel separation (gain=100)
f=10kHz
RS=1kΩ
90
90
dB
3.0
MHz
45
45
Degree
25
25
nV/√H
z
GBW
Unity gain bandwidth (gain=1)
θM
Phase margin
VNOISE
Input noise voltage
2.0
f=1kΩ
3.0
2.0
NOTE: The following specifications apply over operating temperature range.
VOS
Input offset voltage
IOS
Input offset current
IBIAS
Input bias current
AV
Large-signal voltage gain
PC
RS≤10kΩ
7.5
mV
300/5001
nA
800/1500
1500
RL≥2kΩ
VOUT=±10V
25,000
Output voltage swing
RL≥2kΩ
±10
Power consumption
TA=HIGH
TA=LOW
67
1
15,000
150
200
nA
V/V
±10
105
125
NOTES:
1. SA4558 only.
August 31, 1994
6.0
500
V
115
120
150
200
mW
mW
Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
NE/SA/SE4558
TYPICAL PERFORMANCE CURVES
Input Bias as a
Function of Ambient
Temperature
Input Offset Current as
as a Function of Ambient
Temperature
80
60
40
20
–15
VS = + 15V
15
10
5
0
0
0
10
20
30 40 50
0
60 70
10 20
30
40 50
Open–Loop Voltage Gain
as a Function of
Frequency
–5
0
5
10
15
60 70
4
TEMPERATURE (oC)
TEMPERATURE (oC)
POWER CONSUMPTION (mV)
VOLTAGE GAIN
20
RL = 2KΩ
600K
400K
200K
0
–20
1
0
Typical Output Voltage
as a Function of
Supply Voltage
–5
–10
RL = 2KΩ
6
8
10 12
14 16
SUPPLY VOLTAGE (V)
August 31, 1994
20
30 40 50
60
120
110
100
90
70
0
18
40
26
36
24
22
32
28
TA = 25oC
18
16
VS = + 15V
14
12
10
8
0.1 0.2
0.5 1.0 2.0
5.0
LOAD RESISTANCE (KΩ))
68
40 50
60 70
Output Voltage Swing
as a Function of
Frequency
28
20
10 20 30
TEMPERATURE (oC)
PEAK TO PEAK
0
4
10
10
OUTPUT SWING (V)
5
PEAK TO PEAK
10
OUTPUT SWING (V)
OUTPUT SWING (V)
TA = 25oC
–15
130
Output Voltage Swing
as a Function of
Load Resistance)
15
18
140
TEMPERATURE (oC)
FREQUENCY (Hz)
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
14 16
80
0K
10 100 1K 10K 100K1K 10M
10 12
Power Consumption as
a Function of Ambient
Temperature
V = + 15V
VS S
= + 15V
40
8
SUPPLY VOLTAGE (V)
800K
100
60
6
Open–Loop Gain as a
Function of
Temperature
120
80
TA = 25oC
–10
20
COMMON MODE
VOLTAGE RANGE (V)
INPUT offset current ( µ A)
INPUT BIAS CURRENT (µ A)
VS = + 15V
VOLTAGE GAIN (dB)
Common–Mode Range as
a Function of Supply
Voltage
25
100
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
24
20
18
12
8
4
0
100
VS = + 15V
TA = 25oC
RL = 25KΩ
1K
10K
100K
FREQUENCY (Hz)
1M
Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
NE/SA/SE4558
TYPICAL PERFORMANCE CURVES (Continued)
Quiescent Current as a
Function of
Supply Voltage
Transient Response
6
28
TA = 25oC
5
4
3
2
OUTPUT VOLTAGE
24
OUTPUT (mV)
QUIESCENT CURRENT (mA)
Voltage–Follower
Large–Signal Pulse
Response
20
90%
16
12
VS = + 15V
TA = 25oC
RS = 2KΩ
CL = 100pF
8
4
10% RISE TIME
1
0
0
0
3
6
9
12
15
0
18
.25
SUPPLY VOLTAGE (V)
.50
.75
1.0
TA = 25oC
RS = 50Ω
AV = 60dB
100
10
30
40
VS = + 15V
T = 25oC
10
RS = 100K
AV = 60dB
1
0.1
10
100
1K
10K
1
100K
10
100
TOTAL HARMONIC DISTROTION
ON (2) 1kHz (%)
120
100
80
60
VS = +
15V
TA = 25oC
100
1K
FREQUENCY (Hz)
10K
100k
6
VS = +
15V
RL = 2KΩ
AV = 40dB
= 1kHz
RS = 1KΩ
5
4
3
2
1
0
1
2
3
4
5
6
7
8
VO OUTPUT VOLTAGE (VRMS)
69
9
10
TOTAL HARMONIC DISTORATION (%)
Total Harmonic Distortion vs
Output Voltage
140
1K
10K
100K
FREQUENCY (Hz)
Channel Separation
CHANNEL SEPARATION (dB)
20
100
FREQUENCY (Hz)
August 31, 1994
0 5 10
TIME (µS)
NOISE CURRENT (PA√ Hz)
NOISE CURRENT (nV√ Hz)
VS = + 15V
1
10
–6
–8
Input Noise Current as a Function
of Frequency
1
0
–4
TIME (µS)
1000
20
VS = + 15V
TA = 25oC
2
0
–2
–10
1.25
Input Noise Voltage as a Function
of Frequency
40
10
8
6
4
Distortion vs Frequency
VO = 1VRMS
7
6
5
V10S = +30V
RIAA COMPENSATION
4
3
2
1
0
0
100
1K
FREQUENCY (Hz)
10K
100K