PHILIPS HEF4510BD

INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
• The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
• The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4510B
MSI
BCD up/down counter
Product specification
File under Integrated Circuits, IC04
January 1995
Philips Semiconductors
Product specification
HEF4510B
MSI
BCD up/down counter
DESCRIPTION
The HEF4510B is an edge-triggered synchronous
up/down BCD counter with a clock input (CP), an up/down
count control input (UP/DN), an active LOW count enable
input (CE), an asynchronous active HIGH parallel load
input (PL), four parallel inputs (P0 to P3), four parallel
outputs (O0 to O3), an active LOW terminal count output
(TC), and an overriding asynchronous master reset input
(MR).
Information on P0 to P3 is loaded into the counter while PL
is HIGH, independent of all other input conditions except
the MR input, which must be LOW. With PL LOW, the
counter changes on the LOW to HIGH transition of CP if
CE is LOW. UP/DN determines the direction of the count,
HIGH for counting up, LOW for counting down. When
counting up, TC is LOW when O0 and O3 are HIGH and
CE is LOW. When counting down, TC is LOW when O0 to
O3 and CE are LOW. A HIGH on MR resets the counter
(O0 to O3 = LOW) independent of all other input
conditions.
Fig.1 Functional diagram.
PINNING
HEF4510BP(N):
16-lead DIL; plastic
PL
parallel load input (active HIGH)
(SOT38-1)
P0 to P3
parallel inputs
HEF4510BD(F):
16-lead DIL; ceramic (cerdip)
CE
count enable input (active LOW)
(SOT74)
CP
HEF4510BT(D):
16-lead SO; plastic
clock pulse input (LOW to HIGH,
edge triggered)
UP/DN
up/down count control input
MR
master reset input
TC
terminal count output (active LOW)
O0 to O3
parallel outputs
(SOT109-1)
( ): Package Designator North America
FAMILY DATA, IDD LIMITS category MSI
See Family Specifications
Fig.2 Pinning diagram.
January 1995
2
Philips Semiconductors
Product specification
HEF4510B
MSI
BCD up/down counter
Fig.3 Logic diagram (continued in Fig.4).
January 1995
3
Philips Semiconductors
Product specification
HEF4510B
MSI
BCD up/down counter
Fig.4 Logic diagram (continued from Fig.3).
January 1995
4
Philips Semiconductors
Product specification
HEF4510B
MSI
BCD up/down counter
FUNCTION TABLE
CE
CP
MODE
MR
PL
UP/DN
L
H
X
X
X
parallel load
L
L
X
H
X
no change
L
L
L
L
count down
L
L
H
L
count up
H
X
X
X
X
reset
Notes
1. H = HIGH state (the more positive voltage)
L = LOW state (the less positive voltage)
X = state is immaterial
= positive-going transition
Fig.5 State diagram.
Logic equation for terminal count:
TC = CE ⋅ { ( UP/DN ) ⋅ O 0 ⋅ O 3 + ( UP ⁄ DN ) ⋅ O 0 ⋅ O 1 ⋅ O 2 ⋅ O 3 }
A.C. CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; input transition times ≤ 20 ns
VDD
V
Dynamic power
dissipation per
package (P)
TYPICAL FORMULA FOR P (µW)
5
1000 fi + ∑ (foCL) × VDD2
where
10
4500 fi + ∑ (foCL) × VDD2
fi = input freq. (MHz)
15
11 200 fi + ∑ (foCL) × VDD
2
fo = output freq. (MHz)
CL = load capacitance (pF)
∑ (foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
5
Philips Semiconductors
Product specification
HEF4510B
MSI
BCD up/down counter
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL
MIN.
TYP.
MAX.
TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
CP → On
HIGH to LOW
145
290 ns
118 ns + (0,55 ns/pF) CL
60
120 ns
49 ns + (0,23 ns/pF) CL
45
90 ns
37 ns + (0,16 ns/pF) CL
155
310 ns
128 ns + (0,55 ns/pF) CL
65
130 ns
54 ns + (0,23 ns/pF) CL
45
90 ns
37 ns + (0,16 ns/pF) CL
260
525 ns
233 ns + (0,55 ns/pF) CL
105
210 ns
94 ns + (0,23 ns/pF) CL
75
150 ns
67 ns + (0,16 ns/pF) CL
180
360 ns
153 ns + (0,55 ns/pF) CL
75
150 ns
64 ns + (0,23 ns/pF) CL
55
115 ns
47 ns + (0,16 ns/pF) CL
125
255 ns
98 ns + (0,55 ns/pF) CL
55
110 ns
44 ns + (0,23 ns/pF) CL
15
40
85 ns
32 ns + (0,16 ns/pF) CL
5
170
340 ns
143 ns + (0,55 ns/pF) CL
5
10
tPHL
15
5
LOW to HIGH
10
tPLH
15
CP → TC
HIGH to LOW
5
10
tPHL
15
5
LOW to HIGH
10
tPLH
15
PL → On
HIGH to LOW
LOW to HIGH
PL → TC
HIGH to LOW
LOW to HIGH
CE → TC
HIGH to LOW
LOW to HIGH
MR → On, TC
HIGH to LOW
MR → TC
LOW to HIGH
5
10
tPHL
70
140 ns
59 ns + (0,23 ns/pF) CL
15
50
105 ns
42 ns + (0,16 ns/pF) CL
5
250
500 ns
223 ns + (0,55 ns/pF) CL
10
tPLH
110
220 ns
99 ns + (0,23 ns/pF) CL
15
80
160 ns
72 ns + (0,16 ns/pF) CL
5
250
500 ns
223 ns + (0,55 ns/pF) CL
10
tPHL
110
220 ns
99 ns + (0,23 ns/pF) CL
15
80
160 ns
72 ns + (0,16 ns/pF) CL
5
165
330 ns
138 ns + (0,55 ns/pF) CL
10
tPLH
65
135 ns
54 ns + (0,23 ns/pF) CL
15
50
100 ns
42 ns + (0,16 ns/pF) CL
5
145
290 ns
118 ns + (0,55 ns/pF) CL
10
tPHL
60
125 ns
49 ns + (0,23 ns/pF) CL
15
45
95 ns
37 ns + (0,16 ns/pF) CL
5
205
405 ns
178 ns + (0,55 ns/pF) CL
65
130 ns
54 ns + (0,23 ns/pF) CL
10
10
tPLH
tPHL
15
45
85 ns
37 ns + (0,16 ns/pF) CL
5
225
450 ns
198 ns + (0,55 ns/pF) CL
75
150 ns
64 ns + (0,23 ns/pF) CL
50
100 ns
42 ns + (0,16 ns/pF) CL
10
tPLH
15
January 1995
6
Philips Semiconductors
Product specification
HEF4510B
MSI
BCD up/down counter
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
Output transition times
HIGH to LOW
LOW to HIGH
SYMBOL
MIN.
TYP.
5
60
120 ns
TYPICAL EXTRAPOLATION
FORMULA
10 ns + (1,0 ns/pF) CL
30
60 ns
9 ns + (0,42 ns/pF) CL
15
20
40 ns
6 ns + (0,28 ns/pF) CL
5
60
120 ns
30
60 ns
9 ns + (0,42 ns/pF) CL
20
40 ns
6 ns + (0,28 ns/pF) CL
10
10
tTHL
tTLH
15
January 1995
MAX.
7
10 ns + (1,0 ns/pF) CL
Philips Semiconductors
Product specification
HEF4510B
MSI
BCD up/down counter
VDD
V
Minimum clock
pulse width; LOW
Minimum PL
pulse width; HIGH
Minimum MR
pulse width; HIGH
Recovery time
for MR
Recovery time
for PL
SYMBOL
5
10
tWCPL
MIN.
TYP.
TYPICAL EXTRAPOLATION
FORMULA
MAX.
95
45
ns
35
20
ns
15
25
15
ns
5
105
55
ns
10
tWPLH
45
25
ns
15
35
15
ns
5
120
60
ns
50
25
ns
15
40
20
ns
5
130
65
ns
45
20
ns
15
30
15
ns
5
150
75
ns
50
25
ns
10
10
10
tWMRH
tRMR
tRPL
15
30
15
ns
Set-up times
5
100
50
ns
Pn → PL
10
50
25
ns
UP/DN → CP
CE → PL
tsu
15
40
20
ns
5
250
125
ns
100
50
ns
15
75
35
ns
5
120
60
ns
40
20
ns
25
10
ns
10
−40
ns
5
−20
ns
0
−20
ns
10
10
tsu
tsu
15
Hold times
5
Pn → PL
10
thold
15
5
UP/DN → CP
10
thold
15
5
CE → CP
10
thold
15
Maximum clock
pulse frequency
5
10
15
January 1995
fmax
35
−90
ns
15
−35
ns
15
−25
ns
20
−40
ns
5
−15
ns
5
−10
ns
5
10
MHz
12
24
MHz
17
34
MHz
8
see also waveforms
Figs 6 and 7
Philips Semiconductors
Product specification
HEF4510B
MSI
BCD up/down counter
Fig.6
Waveforms showing minimum pulse width for CP, set-up and hold times for CE to CP and UP/DN to CP.
Fig.7
Waveforms showing minimum pulse width for PL and MR, recovery time for PL and MR and set-up and
hold times for Pn to PL.
January 1995
9
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Philips Semiconductors
BCD up/down counter
January 1995
10
Fig.8 Timing diagram.
Product specification
HEF4510B
MSI