PMEM4020AND NPN transistor/Schottky rectifier module Rev. 02 — 31 August 2009 Product data sheet 1. Product profile 1.1 General description Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. PNP complement: PMEM4020APD 1.2 Features n n n n n n 600 mW total power dissipation High current capability up to 2 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor u Low collector-emitter saturation voltage n Diode u Ultra high-speed switching u Very low forward voltage u Guard ring protected 1.3 Applications n n n n n DC-to-DC converters Inductive load drivers General purpose load drivers Reverse polarity protection circuits MOSFET drivers 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit - - 40 V - - 2 A NPN transistor VCEO IC collector-emitter voltage collector current (DC) open base continuous; Ts ≤ 55 °C [1] PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit Schottky barrier rectifier VR continuous reverse voltage - - 40 V IF continuous forward current - - 1 A [1] Soldering point of collector or cathode tab. 2. Pinning information Table 2. Discrete pinning Pin Description 1 emitter 2 not connected 3 cathode 4 anode 5 base 6 collector Simplified outline 6 5 Symbol 4 4 3 6 5 1 2 1 3 sym041 3. Ordering information Table 3. Ordering information Type number PMEM4020AND Package Name Description Version SC-74 plastic surface mounted package; 6 leads SOT457 4. Marking Table 4. Marking Type number Marking code PMEM4020AND D2 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit NPN transistor VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 5 V PMEM4020AND_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 2 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IC Parameter collector current (DC) ICM peak collector current IBM peak base current Ptot total power dissipation Conditions Min Max Unit continuous [1] - 0.95 A continuous [2] - 1.30 A continuous [3] - 1.65 A continuous; Ts ≤ 55 °C [4] - 2 A - 3 A - 1 A Tamb ≤ 25 °C [1] - 295 mW Tamb ≤ 25 °C [2] - 400 mW Tamb ≤ 25 °C [3] - 500 mW Ts ≤ 55 °C [4] - 1000 mW - 150 °C - 40 V junction temperature Tj Schottky barrier rectifier VR continuous reverse voltage IF continuous forward voltage - 1 A IFRM repetitive peak forward current tp ≤ 1ms; δ ≤ 0.5 - 3.5 A IFSM non-repetitive peak forward current t = 8 ms; square wave - 10 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 295 mW Tamb ≤ 25 °C [2] - 400 mW Tamb ≤ 25 °C [3] - 500 mW Ts ≤ 55 °C [4] - 1000 mW [2] - 150 °C [2] - 600 mW −65 +150 °C −65 +150 °C junction temperature Tj Combined device Ptot total power dissipation Tstg storage temperature Tamb ambient temperature Tamb ≤ 25 °C [1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [2] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both collector and cathode. [3] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint. [4] Soldering point of collector or cathode tab. PMEM4020AND_2 Product data sheet [2] © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 3 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module 6. Thermal characteristics Table 6. Thermal characteristics[1] Symbol Parameter Conditions Min Typ Max Unit Single device Rth(j-s) thermal resistance from junction to soldering point in free air [2] - - 95 K/W Rth(j-a) thermal resistance from junction to ambient in free air [3] - - 250 K/W [4] - - 315 K/W [5] - - 425 K/W [3] - - 208 K/W Combined device Rth(j-a) thermal resistance from junction to ambient in free air [1] For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. [2] Soldering point of collector or cathode tab. [3] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint. [4] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both collector and cathode tab. [5] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. PMEM4020AND_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 4 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit NPN transistor ICBO collector-base cut-off current VCB = 40 V; IE = 0 A - - 100 nA VCB = 40 V; IE = 0 A; Tj = 150 °C - - 50 µA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 300 - - VCE = 5 V; IC = 500 mA 300 - 900 VCE = 5 V; IC = 1 A 200 - - 75 - - - - 75 VCE = 5 V; IC = 2 A VCEsat collector-emitter saturation voltage [1] IC = 100 mA; IB = 1 mA mV IC = 500 mA; IB = 50 mA - - 100 mV IC = 1 A; IB = 100 mA - - 190 mV IC = 2 A; IB = 200 mA - - 400 mV - 150 190 mΩ RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA [1] VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA [1] - - 1.2 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A [1] - - 1.1 V fT transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz 150 - - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 10 pF Schottky barrier rectifier continuous forward voltage VF reverse current IR diode capacitance Cd [1] see Figure 1 IF = 0.1 mA [1] - 95 130 mV IF = 1 mA [1] - 155 210 mV IF = 10 mA [1] - 220 270 mV IF = 100 mA [1] - 295 350 mV IF = 1000 mA [1] - 540 640 mV VR = 10 V [1] - 7 20 µA VR = 40 V [1] - 30 100 µA - 43 48 pF see Figure 2 VR = 1 V; f = 1 MHz; see Figure 3 Pulse test: tp ≤ 300 µs; δ ≤ 0.02 PMEM4020AND_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 5 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module mdb670 105 mdb669 103 IR (µA) IF (mA) (1) 104 102 103 (1) 10 (2) (2) (3) 102 1 10−1 10 (3) 1 0 0.2 0.4 VF (V) 0 0.6 Schottky barrier rectifier 10 30 VR (V) 40 Schottky barrier rectifier (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C Fig 1. 20 Forward current as a function of forward voltage; typical values mdb671 100 Cd (pF) Fig 2. Reverse current as a function of reverse voltage; typical values mhc077 1000 hFE (1) 80 800 60 600 (2) 400 40 (3) 200 20 0 10−1 0 0 5 10 15 20 1 10 102 VR (V) Schottky barrier rectifier; 103 104 IC (mA) NPN transistor; VCE = 5 V Tamb = 25 °C; f = 1 MHz (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. Diode capacitance as a function of reverse voltage; typical values Fig 4. DC current gain as a function of collector current; typical values PMEM4020AND_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 6 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module mhc078 10 mhc079 103 VCEsat (mV) VBE (V) 102 1 (1) (1) (2) (3) (2) 10 (3) 10−1 10−1 1 10 102 1 104 103 IC (mA) NPN transistor; VCE = 5 V 1 103 IC (mA) 104 NPN transistor; IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = −55 °C Fig 5. 102 10 Base-emitter voltage as a function of collector current; typical values mhc080 102 Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values mhc081 400 fT (MHz) RCEsat (Ω) 300 10 200 1 100 (1) (2) (3) 10−1 10−1 1 10 102 0 104 103 IC (mA) 0 NPN transistor; IC/IB = 10 200 400 600 800 1000 I C (mA) NPN transistor; VCE = 10 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Equivalent on-resistance as a function of collector current; typical values Fig 8. Transition frequency as a function of collector current PMEM4020AND_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 7 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module 8. Application information VCC VIN VOUT CONTROLLER IN Rload mle231 Fig 9. DC-to-DC converter mdb577 Fig 10. Inductive load driver (relays, motors and buzzers) with free-wheeling diode PMEM4020AND_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 8 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module 9. Package outline Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT457 JEITA SC-74 EUROPEAN PROJECTION ISSUE DATE 05-11-07 06-03-16 Fig 11. Package outline SOT457 (SC-74) PMEM4020AND_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 9 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 PMEM4020AND [1] SOT457 10000 4 mm pitch, 8 mm tape and reel; T1 -115 -135 4 mm pitch, 8 mm tape and reel; T2 -125 -165 For further information and the availability of packing methods, see Section 13. PMEM4020AND_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 10 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEM4020AND_2 20090831 Product data sheet - PMEM4020AND_1 Modifications: PMEM4020AND_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • • Table 2 “Discrete pinning”: amended Figure 11 “Package outline SOT457 (SC-74)”: updated 20041004 Product data sheet PMEM4020AND_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 11 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMEM4020AND_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 31 August 2009 12 of 13 PMEM4020AND NXP Semiconductors NPN transistor/Schottky rectifier module 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 31 August 2009 Document identifier: PMEM4020AND_2