PHILIPS LBE2003S

DISCRETE SEMICONDUCTORS
DATA SHEET
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Mar 03
Philips Semiconductors
Product specification
LBE2003S;
LBE2009S; LCE2009S
NPN microwave power transistors
FEATURES
DESCRIPTION
• Diffused emitter ballasting resistors
The LBE2003S and LBE2009S are NPN silicon planar
epitaxial microwave power transistors in a SOT441A metal
ceramic studless package.The LCE2009S is a
maintenance type in a SOT442A metal ceramic capstan
package.
• Self-aligned process entirely ion implanted and gold
metallization
• Optimum temperature profile
• Excellent performance and reliability.
PINNING
APPLICATIONS
PIN
• Common emitter class-A linear power amplifiers up
to 4 GHz.
handbook, halfpage
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
handbook, halfpage
4
4
c
c
3
3
b
1
b
1
e
e
2
2
Top view
Top view
MAM329
Marking code: LBE2003S = 407; LBE2009S = 409.
MAM330
Marking code: LCE2009S = 408.
Fig.1 Simplified outline and symbol (SOT441A).
Fig.2 Simplified outline and symbol (SOT442A).
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.
TYPE NUMBER
MODE OF
OPERATION
f
(GHz)
VCE
(V)
IC
(mA)
PL1
(mW)
Gpo
(dB)
Zi
(Ω)
ZL
(Ω)
LBE2003S
Class-A (CW) linear
2
18
30
≥200
≥10
6.2 + j30
17.5 + j7
Class-A (CW) linear
2
18
110
≥700
≥9
7.5 + j15
17.5 + j39
LBE2009S
LCE2009S
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
2
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
VCER
collector-emitter voltage
CONDITIONS
MIN.
MAX.
open emitter
LBE2003S
RBE = 220 Ω
LBE2009S; LCE2009S
−
UNIT
40
V
35
V
RBE = 100 Ω
−
35
V
VCEO
collector-emitter voltage
open base
−
16
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
LBE2003S
−
90
mA
LBE2009S; LCE2009S
−
250
mA
LBE2003S
−
1.4
W
LBE2009S; LCE2009S
−
3.5
W
−65
+150
°C
−
200
°C
at 0.3 mm from case; t = 10 s −
235
°C
Tmb ≤ 75 °C
total power dissipation
Ptot
Tstg
storage temperature
Tj
operating junction temperature
Tsld
soldering temperature
MGD996
102
handbook, halfpage
MGD989
2
handbook, halfpage
Ptot
(W)
IC
(mA)
1.5
(2)
(1)
(3)
10
1
0.5
1
10
15
20
30
40
60
0
−50
100
VCE (V)
0
50
100
150
200
Tmb (oC)
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 220 Ω.
(3) Second breakdown limit (independent of temperature).
Fig.4
Fig.3 DC SOAR; LBE2003S.
Power dissipation derating as a function of
mounting-base temperature; LBE2003S.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
3
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
MGD990
103
handbook, halfpage
MGD991
4
handbook, halfpage
P tot
(W)
IC
(mA)
3
(3)
102
2
(1)
(2)
10
1
1
10
20
40
VCE (V)
0
−50
102
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 100 Ω.
(3) Second breakdown limit (independant of temperature).
Fig.5
Fig.6
DC SOAR; LBE2009S, LCE2009S
0
50
100
200
150
Tmb (oC)
Power dissipation derating as a function
of mounting-base temperature;
LBE2009S, LCE2009S.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
CONDITIONS
thermal resistance from junction to mounting-base
LBE2009S; LCE2009S
thermal resistance from mounting-base to heatsink
Tj = 75 °C; note 1
65
K/W
36
K/W
1.5
K/W
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
4
UNIT
Tj = 75 °C; note 1
LBE2003S
Rth mb-h
MAX.
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
µA
LBE2003S
−
−
150
µA
LBE2009S; LCE2009S
−
−
250
µA
ICBO
collector cut-off current
VCB = 40 V; IE = 0
Ccb
Cce
collector cut-off current
LBE2003S
VCB = 35 V; RBE = 220 Ω
−
−
500
µA
LBE2009S; LCE2009S
VCB = 35 V; RBE = 100 Ω
−
−
1000
µA
LBE2003S
−
−
0.05
µA
LBE2009S; LCE2009S
−
−
0.2
µA
VCE = 5 V; IC = 30 mA
15
−
150
VCE = 5 V; IC = 110 mA
15
−
150
LBE2003S
−
0.3
−
pF
LBE2009S; LCE2009S
−
0.6
−
pF
−
0.45
−
pF
−
0.6
−
pF
LBE2003S
−
1.7
−
pF
LBE2009S; LCE2009S
−
3.3
−
pF
emitter cut-off current
DC current gain
collector-base capacitance
collector-emitter capacitance
VEB = 1.5 V; IC = 0
VCB = 18 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
VCE = 18 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
LBE2003S
LBE2009S; LCE2009S
Ceb
emitter-base capacitance
VCB = 10 V; VEB = 1 V;
IE = IC = 0; f = 1 MHz
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
UNIT
0.1
VCB = 20 V; IE = 0
hFE
MAX.
−
collector cut-off current
IEBO
TYP.
−
ICBO
ICER
MIN.
5
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Table 1
f
(MHz)
Scattering parameters LBE2003S: VCE = 18 V; IC = 30 mA (VCE and IC regulated); Tmb = 25 °C; Zo = 50 Ω;
typical values. (The figures given between brackets are values in dB).
s21
s11
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
500
0.56
−143
0.037 (−28.6)
41
9.50 (19.6)
600
0.55
−154
0.040 (−28.0)
39
700
0.55
−164
0.040 (−27.9)
800
0.55
−171
0.041 (−27.7)
900
0.55
−178
1000
0.55
1100
0.55
1200
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
101
0.56
−34
8.28 (18.4)
93
0.51
−35
40
7.13 (17.1)
88
0.50
−36
40
6.35 (16.1)
82
0.49
−37
0.043 (−27.4)
41
5.69 (15.1
77
0.47
−38
176
0.045 (−26.9)
40
5.14 (14.2
72
0.46
−39
170
0.048 (−26.4)
40
4.72 (13.5
68
0.46
−39
0.55
165
0.051 (−25.9)
41
4.37 (12.8
64
0.45
−41
1300
0.56
159
0.056 (−25.1)
41
4.05 (12.2
60
0.44
−44
1400
0.55
158
0.060 (−24.5)
41
3.76 (11.5
57
0.45
−46
1500
0.55
149
0.062 (−24.2)
40
3.52 (10.9
53
0.43
−48
1600
0.55
146
0.065 (−23.8)
42
3.33 (10.5
50
0.43
−50
1700
0.56
142
0.068 (−23.3)
42
3.15 (10.0
46
0.43
−53
1800
0.57
137
0.070 (−23.1)
41
2.96 (9.4)
42
0.43
−54
1900
0.57
132
0.072 (−22.9)
40
2.80 (8.9)
39
0.43
−56
2000
0.58
128
0.074 (−22.7)
40
2.66 (8.5)
36
0.42
−57
2200
0.60
121
0.081 (−21.8)
39
2.43 (7.7)
28
0.41
−61
2400
0.62
114
0.091 (−20.8)
37
2.24 (7.0)
23
0.40
−67
2600
0.64
108
0.099 (−20.1)
36
2.08 (6.4)
16
0.39
−75
2800
0.66
102
0.105 (−19.6)
33
1.90 (5.6)
10
0.38
−82
3000
0.68
96
0.108 (−19.4)
31
1.79 (5.1)
4
0.39
−87
3200
0.71
92
0.124 (−18.7)
29
1.63 (4.3)
−2
0.37
−94
3400
0.73
89
0.125 (−18.0)
27
1.58 (4.0)
−7
0.40
−101
3600
0.75
86
0.137 (−17.3)
25
1.46 (3.3)
−13
0.39
−112
3800
0.76
82
0.142 (−17.0)
23
1.40 (2.9)
−18
0.38
−120
4000
0.77
79
0.149 (−16.6)
20
1.31 (2.3)
−24
0.38
−128
4200
0.78
75
0.155 (−16.2)
17
1.25 (1.9)
−28
0.38
−133
4400
0.80
73
0.167 (−15.5)
15
1.20 (1.6)
−34
0.39
−142
4600
0.81
69
0.177 (−15.0)
12
1.14 (1.1)
−38
0.39
−151
4800
0.81
68
0.187 (−14.6)
10
1.10 (0.8)
−43
0.42
−159
5000
0.81
65
0.194 (−14.3)
6
1.04 (0.4)
−47
0.44
−165
5200
0.80
60
0.203 (−13.8)
4
1.03 (0.3)
−53
0.47
−169
5400
0.81
56
0.219 (−13.2)
−1
0.98 (−0.2)
−57
0.48
−175
5600
0.81
51
0.229 (−12.8)
−3
0.97 (−0.3)
−62
0.49
−178
5800
0.81
48
0.243 (−12.3)
−8
0.92 (−0.7)
−68
0.51
−171
6000
0.80
44
0.245 (−12.2)
−12
0.90 (−0.9)
−72
0.55
−165
1997 Mar 03
6
ANGLE
(deg)
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Table 2
f
(MHz)
Scattering parameters LBE2009S; LCE2009S: VCE = 18 V; IC = 110 mA (VCE and IC regulated); Tmb = 25 °C;
Zo = 50 Ω; typical values. (The figures given between brackets are values in dB).
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
500
0.70
177
0.029 (−30.7)
50
7.55 (17.6)
83
0.25
−48
600
0.70
171
0.033 (−29.6)
51
6.43 (16.2)
77
0.22
−50
700
0.70
168
0.036 (−29.0)
53
5.46 (14.6)
73
0.23
−52
800
0.70
163
0.039 (−28.4)
54
4.80 (13.6)
68
0.22
−54
900
0.71
159
0.041 (−27.8)
54
4.27 (12.6)
64
0.22
−56
1000
0.71
155
0.045 (−27.0)
55
3.84 (11.7)
60
0.21
−59
1100
0.71
151
0.049 (−26.2)
54
3.53 (11.0)
56
0.21
−62
1200
0.71
148
0.054 (−25.4)
54
3.27 (10.3)
52
0.21
−65
1300
0.71
144
0.060 (−24.5)
53
3.01 (9.6)
48
0.20
−74
1400
0.72
143
0.066 (−23.6)
54
2.80 (9.0)
45
0.20
−79
1500
0.72
136
0.070 (−23.1)
52
2.61 (8.3)
41
0.21
−80
1600
0.72
133
0.075 (−22.5)
53
2.47 (7.9)
38
0.21
−83
1700
0.72
130
0.080 (−21.9)
51
2.33 (7.3)
34
0.22
−87
1800
0.73
127
0.084 (−21.5)
49
2.18 (6.8)
30
0.22
−90
1900
0.73
123
0.087 (−21.2)
48
2.05 (6.3)
26
0.22
−94
2000
0.74
120
0.090 (−20.9)
46
1.97 (5.9)
23
0.22
−97
2200
0.75
114
0.100 (−20.0)
43
1.78 (5.0)
15
0.22
−109
2400
0.77
108
0.112 (−19.0)
40
1.63 (4.3)
10
0.21
−122
2600
0.79
103
0.123 (−18.2)
37
1.51 (3.6)
2
0.24
−133
2800
0.80
97
0.129 (−17.8)
33
1.36 (2.7)
−4
0.25
−143
3000
0.81
92
0.134 (−17.5)
30
1.28 (2.1)
−11
0.27
−151
3200
0.83
88
0.143 (−16.9)
26
1.15 (1.2)
−17
0.28
−163
3400
0.85
85
0.152 (−16.4)
24
1.10 (0.9)
−21
0.30
−173
3600
0.86
82
0.163 (−15.8)
20
1.00 (0)
−28
0.34
178
3800
0.87
79
0.168 (−15.5)
17
0.96 (−0.4)
−32
0.37
173
4000
0.88
75
0.175 (−15.2)
14
0.88 (−1.1)
−39
0.41
168
4200
0.88
71
0.180 (−14.9)
11
0.83 (−1.6)
−42
0.42
162
4400
0.89
69
0.193 (−14.3)
8
0.79 (−2.1)
−48
0.45
155
4600
0.90
66
0.200 (−14.0)
5
0.74 (−2.6)
−51
0.48
149
4800
0.90
64
0.211 (−13.5)
2
0.71 (−3.0)
−56
0.52
145
5000
0.90
61
0.214 (−13.4)
−2
0.66 (−3.6)
−59
0.55
144
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
7
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
APPLICATION INFORMATION
Microwave performance for LBE2003S up to Tmb = 25 °C in a common emitter class-A test circuit; note 1.
MODE OF OPERATION
f
(GHz)
VCE
(V) (2)
IC
(mA) (2)
PL1
(mW) (3)
Gpo
(dB) (4)
Zi
(Ω)
ZL
(Ω)
2
18
30
≥200 (23)
typ. 250 (24)
≥10
typ. 11
6.2 + j30
17.5 + j7
Class-A (CW)
Notes
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
2. IC and VCE regulated.
3. Load power for 1 dB compressed power gain.
4. Low level power gain associated with PL1.
handbook, full pagewidth
3
2.5
66.5
2
12.5
1.2
12.5
6
21
3
2 2
7
10.5
10.5
6
5
2
1
input
2
5
0.5
2
output
3.5
C
C
14.5
MCD635
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.54); thickness: 0.8 mm.
Fig.7 Prematching test circuit board for 2 GHz.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
8
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
MGD992
300
MGD993
10
handbook, halfpage
handbook, halfpage
PL
(mW)
200
typ
S12
(dB)
PL1
(1)
typ
5
100
0
0
0
10
20
Pi (mW)
30
0
f = 2 GHz; Tmb = 25 °C.
VCE = 18 V; IC = 30 mA.
(1) Gpo = 11 dB.
20
40
60
IC (mA)
Class-A operation.
f = 2 GHz; Tmb = 25 °C; VCE = 18 V.
Fig.8 Load power as a function of input power.
Fig.9
s12 as a function of collector current.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
80
9
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Microwave performance for LBE2009S; LCE2009S up to Tmb = 75 °C in a common emitter class-A test circuit; note 1.
MODE OF OPERATION
Class-A (CW)
f
(GHz)
VCE
(V) (2)
IC
(mA) (2)
PL1
(mW) (3)
Gpo
(dB) (4)
Zi
(Ω)
ZL
(Ω)
2
18
110
≥700 (28.5)
typ. 900 (29.5)
≥9
typ. 9.8
7.5 + j14.5
17.5 + j38.5
Notes
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
2. IC and VCE regulated.
3. Load power for 1 dB compressed power gain.
4. Low level power gain associated with PL1.
1.2
handbook, full pagewidth
input
VSWR < 3.5
Zo = 50 Ω
2
26.4
12.4
13
0.8
2
6.8
25
5.2
2
2
output
VSWR < 3
Zo = 50 Ω
MGD999
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.54); thickness: 0.8 mm.
Fig.10 Prematching test circuit board for 2 GHz.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
10
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
MGD994
1
MGD995
8
handbook, halfpage
handbook, halfpage
PL1
(1)
PL
(W)
S12
(dB)
typ
4
0.5
0
0
0
50
100
Pi (mW)
150
0
f = 2 GHz; Tmb = 25 °C.
VCE = 18 V; IC = 110 mA.
(1) Gpo = 9.8 dB.
50
100
IC (mA)
Class-A operation.
f = 2 GHz; Tmb = 25 °C; VCE = 18 V.
Fig.11 Load power as a function of input power.
Fig.12 s12 as a function of collector current.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
150
11
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
PACKAGE OUTLINES
Studless ceramic package; 4 leads
SOT441A
D
A
AI2O3
Q
BeO
seating plane
D1
c
b
α
4
L
3
b1
1
L
2
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
b
b1
c
D
D1
L
min.
Q
α
mm
2.4
3.2
0.75
0.125
3.38
3.08
5.28
5.12
6
1.3
1.0
90°
Note
1. This device corporates naked beryllium oxide, the dust of witch is toxic.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT441A
1997 Mar 03
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Studded ceramic package; 4 leads
SOT442A
D2
D
A
Q
c
D1
N1
M
seating plane
W
N2
N
X
N3
M1
detail X
b
α
4
L
3
b1
1
L
2
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
b
b1
c
D
D1
D2
L
min.
M
M1
N
max.
N1
max.
N2
N3
min
Q
W
α
mm
4.0
3.2
0.75
0.125
3.38
3.08
5.25
5.10
5.28
5.12
6
3.27
3.01
1.6
1.4
12.5
1.6
8.5
7.5
2.9
2.80
2.50
8-32
UNC
90°
Note
1. This device corporates naked beryllium oxide, the dust of witch is toxic.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT442A
1997 Mar 03
EUROPEAN
PROJECTION
13
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Mar 03
14
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
NOTES
1997 Mar 03
15
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp16
Date of release: 1997 Mar 03
Document order number:
9397 750 01864