PHILIPS LLE16120X

DISCRETE SEMICONDUCTORS
DATA SHEET
LLE16120X
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
APPLICATIONS
LLE16120X
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
Zi; ZL
(Ω)
Class AB (CW)
1.65
24
0.1
≥11
≥8.7
see Figs 8 and 9
PINNING - SOT437A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
handbook, 4 columns
1
c
Intended for use in common emitter,
class AB power amplifiers in CW
conditions for professional
applications at 1.65 GHz.
b
3
e
2
Top view
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
MAM112
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
45
V
VCER
collector-emitter voltage
RBE = 220 Ω
−
30
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
2
A
Ptot
total power dissipation
−
23
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
Tmb = 75 °C
t ≤ 10 s; note1
Note
1. Up to 0.2 mm from ceramic.
MRA544
30
Ptot
(W)
25
MRA545
10
handbook, halfpage
handbook, halfpage
IC
(A)
20
1
15
(1)
10
10−1
5
10−2
0
1
10
VCE (V)
102
Tmb ≤ 75 °C.
(I) Region of permissible DC operation.
50
100
150
250
200
Tmb (oC)
Ptot max = 23 W.
Fig.3
Fig.2 DC SOAR.
1997 Feb 18
0
3
Maximum power dissipation derating as a
function of mounting base temperature.
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
4.2
K/W
0.2
K/W
Tj = 100 °C
Rth j-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink note1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 20 V; IE = 0
−
1
mA
V(BR)CER
collector-emitter breakdown voltage
IC = 5 mA; RBE = 220 Ω
30
−
V
V(BR)CBO
collector-base breakdown voltage
IC = 5 mA; IB = 0
45
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 5 mA; IC = 0
3
−
V
hFE
DC current gain
VCE = 3 V; IC = 1 A
15
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier (note 1).
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(Ω)
Class AB (CW)
1.65
24
0.1
≥11;
typ. 13
≥8.7;
typ. 10.8
typ. 45
see Figs 8 and 9
Note
1. The test circuit is split into 2 independant halves each being 30 × 40 mm in size.
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
30 mm
handbook, full pagewidth
3
1
3
1.2
30 mm
2.5
9.3
5
5
0.5
7
12.5
2
4.5
12.5
0.635
10.2
2x
0.5
40 mm
0.635
input
1.4
3
0.5
1
40 mm
1
2
0.5
5.8
output
2x
0.5
2
10
MCD661
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.4 Prematching test circuit board.
List of components (see bias circuit)
COMPONENT
DESCRIPTION
VALUE
TR1
transistor, BDT85 (or equivalent)
D1
diode, BY239800 (or equivalent); note 1
D2
diode, BY239800; note 2
R1
resistor
100 Ω
R2
resistor
3.3 kΩ
R3
resistor
56 Ω
P1
potentiometer, 10 turns (sfernice)
4.7 kΩ
C1
electrolytic capacitor
10 µF, 40 V
C5, C6
feedthrough bypass capacitor
1500 pF
L1
5 turns 0.5 mm copper wire with ferrite bead
L2
5 turns 0.5 mm copper wire
Notes
1. In thermal contact with TR1.
2. In thermal contact with D.U.T.
1997 Feb 18
5
ORDERING INFORMATION
Erie, ref. 1250-003
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
BIAS CIRCUIT
handbook, full pagewidth
PREMATCHINGTEST CIRCUIT
+VCC
R1
C6
TR1
C5
R2
L2
L1
P1
R3
D1
D.U.T.
C1
D2
0V
MBC421 - 1
Fig.5 Class AB bias circuit at 1.65 GHz.
MGA246
MGA245
−15
handbook,15
halfpage
handbook, halfpage
dim
(dBc)
PL
(W)
(1)
(1)
(2)
(3)
10
−25
(2)
−35
5
(3)
0
0
0.4
0.8
−45
0
1.8
1.4
2
4
6
8
POUT (W)
PIN (W)
VCE = 24 V; f1 = 1.65 GHz; f2 = 1.6502 GHz.
VCE = 24 V; f = 1.65 GHz.
(1) ICQ = 100 mA.
(2) ICQ = 30 mA.
(3) ICQ = 3 mA.
(1) ICQ = 3 mA.
(2) ICQ = 30 mA.
(3) ICQ = 100 mA.
Fig.7
Fig.6 Load power as a function of input power.
1997 Feb 18
6
Intermodulation distortion as a function
of average output power.
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
1
handbook, full pagewidth
0.5
2
0.2
5
1.65
Zi
10
1.75
+j
0
0.2
0.5
1
–j
2
5
10
∞
1.85 GHz
10
5
0.2
2
0.5
1
MGA247
VCE = 24 V; Zo = 10 Ω; ICQ = 0.1 A.
Fig.8 Input impedance as a function of frequency; typical values.
1
handbook, full pagewidth
0.5
2
0.2
5
ZL
+j
0
10
1.65
0.2
1.75 0.5
1
2
5
10
∞
1.85 GHz
–j
10
5
0.2
2
0.5
1
MGA248
VCE = 24 V; Zo = 10 Ω; ICQ = 0.1 A.
Fig.9 Optimum load impedance as a function of frequency; typical values.
1997 Feb 18
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
PACKAGE OUTLINE
19.1 max
0.13
max
6.5
max
1.7
max
4.8
max
2.3
2.0
seating
plane
14.22
0.25 M
1
4.5 min
6.5
6.2
O 3.3
3
4.5 min
2
1.7 max
Dimensions in mm.
Torque on screws: max. 0.5 Nm.
Recommended screw: M3.
Recommended pitch for mounting screw: 19 mm.
Fig.10 SOT437A.
1997 Feb 18
8
MBB945
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
9
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
NOTES
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16120X
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01697