PHILIPS LXE16350X

DISCRETE SEMICONDUCTORS
DATA SHEET
LXE16350X
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
APPLICATIONS
Common emitter class AB power
amplifiers for military and
professional applications at
1.65 GHz.
LXE16350X
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
Zi; ZL
(Ω)
Class AB (CW)
1.65
24
0.3
≥32
≥9
see Figs 8 and 9
PINNING - SOT439A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
1
andbook, 4 columns
c
b
3
3
e
2
DESCRIPTION
MAM045
Top view
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic package,
with emitter connected to flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
45
V
VCER
collector-emitter voltage
RBE = 220 Ω
−
30
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
6
A
Ptot
total power dissipation
−
57
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
Tmb = 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MRA441
10
MRA442
100
handbook, halfpage
handbook, halfpage
Ptot
(W)
IC
(A)
80
1
60
40
(1)
10−1
20
0
10−2
1
10
VCE (V)
0
102
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
100
150
200
Tmb (oC)
Ptot max = 57 W.
Fig.3
Fig.2 DC SOAR.
1997 Feb 19
50
3
Maximum power dissipation derating as a
function of mounting base temperature.
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tj = 100 °C
1.7
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.2
K/W
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
VCB = 20 V; IE = 0
−
3
mA
VCB = 40 V; IE = 0
−
30
mA
−
30
mA
ICER
collector cut-off current
VCE = 30 V; RBE = 220 Ω
ICEO
collector cut-off current
VCE = 20 V; IB = 0
−
30
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
−
300
µA
hFE
DC current gain
VCE = 3 V; IC = 3 A
15
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common-emitter class AB amplifier (note 1).
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
Zi; ZL
(Ω)
Class AB (CW)
1.65
24
0.3
≥32
typ. 35
≥9
typ. 10
see Figs 8 and 9
Note
1. The test circuit is split into 2 independent halves each being 30 × 40 mm in size.
List of components (see Fig 4).
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1
5 turns 0.5 mm diameter copper
wire with ferrite bead
int. dia. 2 mm
L2
5 turns 0.5 mm diameter copper
wire
int. dia. 2 mm
C1, C4
DC blocking chip capacitor
100 pF
C2, C3
trimmer capacitor
0.5 to 5 pF
Tekelec
C5, C6
feedthrough bypass capacitor
1500 pF
Erie, ref. 1250-003
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
30 mm
handbook, full pagewidth
1 4
3
10
30 mm
5
6
6
4
5
2 3
2.5
1
0.8
0.8
10
10
10
40 mm
2
6
4
5
0.65
1.5
3.75
40 mm
3
1.5
MCD620
V BB
handbook, full pagewidth
VCC
C5
C6
L1
input
L2
output
C4
C1
10
C2
4
5
3
C3
MCD621
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.4 Prematching test circuit board.
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
BIAS CIRCUIT
handbook, full pagewidth
PREMATCHINGTEST CIRCUIT
+VCC
R1
C6
TR1
C5
R2
L2
L1
P1
D1
R3
D.U.T.
C1
D2
0V
MBC421 - 1
Fig.5 Class AB bias circuit at 1.65 GHz.
List of components (see Fig 5)
COMPONENT
DESCRIPTION
VALUE
TR1
transistor, BDT85 (or equivalent)
D1
diode, IN4148 (or equivalent); note 1
D2
diode, BY239800; note 2
R1
resistor
100 Ω
R2
resistor
10 kΩ
R3
resistor
56 Ω
P1
potentiometer, 10 turns (sfernice)
4.7 kΩ
C1
electrolytic capacitor
10 µF (>30 V)
C5, C6
feedthrough bypass capacitor
1500 pF
L1
5 turns 0.5 mm copper wire with ferrite bead
L2
5 turns 0.5 mm copper wire
Notes
1. In thermal contact with TR1.
2. In thermal contact with D.U.T.
1997 Feb 19
6
CATALOGUE NO.
Erie, ref. 1250-003
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
MRA440
40
MRA439
−15
handbook, halfpage
handbook, halfpage
PL
(W)
dim
(dBc)
(1)
30
−25
(1)
(2)
(3)
20
(2)
−35
10
(3)
−45
0
0
2
4
Pi (W)
0
6
20
Po (W)
30
VCE = 24 V.
f1 = 1.65 GHz
f2 = 1.6502 GHz.
(1) ICQ = 10 mA.
(2) ICQ = 100 mA.
(3) ICQ = 300 mA.
VCE = 24 V.
(1) ICQ = 300 mA.
(2) ICQ = 100 mA.
(3) ICQ = 10 mA.
Fig.7
Fig.6 Load power as a function of input power.
1997 Feb 19
10
7
Intermodulation distortion as a function of
average output power.
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
1
handbook, full pagewidth
0.5
2
Zi
0.2
5
1.65
10
+
j
0.2
0
–j
1.75 1
0.5
2
5
10
∞
1.85 GHz
10
5
0.2
2
0.5
MBC422
1
VCE = 24 V; Zo = 10 Ω; ICQ = 0.3 A.
Fig.8 Input impedance as a function of frequency; typical values.
1
handbook, full pagewidth
0.5
0.2
2
5
ZL
10
+j
0
0.2
0.5
1.85 GHz
–j
1.75
1
2
5
10
∞
1.65
10
5
0.2
2
0.5
MBC423
1
VCE = 24 V; Zo = 10 Ω; ICQ = 0.3 A.
Fig.9 Optimum load impedance as a function of frequency; typical values.
1997 Feb 19
8
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
PACKAGE OUTLINE
12.85 max
handbook, full pagewidth
0.15 max
6
max
3.3
2.9
1.6 max
3
23 max
seating plane
3.7
max
2.7
min
1
9.85
max
3.3
2.7
min
2
MBC881
8.25
16.5
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screw: 19 mm.
Fig.10 SOT439A.
1997 Feb 19
9
10.3
10.0
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 19
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
NOTES
1997 Feb 19
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number:
9397 750 01712