PHILIPS PDTA114

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTA114EE
PNP resistor-equipped transistor
Preliminary specification
Supersedes data of 1997 Jul 03
File under Discrete Semiconductors, SC04
1998 Jul 23
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
FEATURES
• Built-in bias resistors R1 and R2
(typ. 10 kΩ each)
• Simplification of circuit design
handbook, halfpage
• Reduces number of components
and board space.
3
3
R1
1
R2
APPLICATIONS
1
• Especially suitable for space
reduction in interface and driver
circuits
Top view
• Inverter circuit configurations
without use of external resistors.
2
2
MAM345
Fig.1 Simplified outline (SC-75) and symbol.
DESCRIPTION
MARKING
PNP resistor-equipped transistor in
an SC-75 plastic package.
NPN complement: PDTC114EE.
1
TYPE
NUMBER
3
MARKING
CODE
PDTA114EE
PINNING
PIN
03
2
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
MGA893 - 1
Fig.2
Equivalent inverter
symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
−
−
−50
V
IO
output current (DC)
−
−
−100
mA
ICM
peak collector current
−
−
−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
−
150
mW
hFE
DC current gain
IC = −5 mA; VCE = −5 V
30
−
−
R1
input resistor
7
10
13
R2
------R1
resistor ratio
0.8
1
1.2
1998 Jul 23
open base
2
kΩ
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−10
V
VI
input voltage
positive
−
+10
V
negative
−
−40
V
−
−100
mA
IO
output current (DC)
ICM
peak collector current
Ptot
total power dissipation
Tstg
−
−100
mA
−
150
mW
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
833
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
ICEO
collector cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IC = 0; VCB = −50 V
−
−
−100
nA
IB = 0; VCE = −30 V
−
−
−1
µA
IB = 0; VCE = −30 V; Tj = 150 °C
−
−
−50
µA
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
−400
hFE
DC current gain
IC = −5 mA; VCE = −5 V
30
−
−
VCEsat
collector-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−
−
−150
mV
Vi(off)
input-off voltage
IC = −100 µA; VCE = −5 V
−
−1100 −800
mV
Vi(on)
input-on voltage
IC = −10 mA; VCE = −300 mV
−2.5
−1.8
−
V
R1
input resistor
7
10
13
kΩ
R2
------R1
resistor ratio
0.8
1
1.2
Cc
collector capacitance
−
3
1998 Jul 23
IE = ie = 0; VCB = −10 V; f = 1 MHz −
3
pF
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
MBK780
103
handbook, halfpage
MBK779
−1
handbook, halfpage
hFE
VCEsat
(1)
(2)
102
(V)
(3)
−10−1
(1)
(2)
(3)
10
1
−10−1
−1
−10
IC (mA)
−10−2
−1
−102
−10
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MBK782
−10
Collector-emitter saturation voltage as a
function of collector current; typical values.
MBK781
−102
handbook, halfpage
handbook, halfpage
−102
IC (mA)
Vi(on)
(V)
Vi(off)
(V)
−10
(1)
(2)
−1
(1) (2) (3)
(3)
−1
−10−1
−10−2
−10−1
−1
IC (mA)
−10−1
−10−1
−10
VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5
Fig.6
Input-off voltage as a function of collector
current; typical values.
1998 Jul 23
4
−1
−10
IC (mA)
−102
Input-on voltage as a function of collector
current; typical values.
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
1998 Jul 23
REFERENCES
IEC
JEDEC
EIAJ
SC-75
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 23
6
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114EE
NOTES
1998 Jul 23
7
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
115104/00/02/pp8
Date of release: 1998 Jul 23
Document order number:
9397 750 04119