PHILIPS PUMD9

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMD9
NPN/PNP resistor-equipped
transistors
Product specification
Supersedes data of 1999 Jan 07
1999 May 20
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD9
FEATURES
• Transistors with different polarity and built-in bias
resistors R1 and R2 (typ. 10 kΩ and 47 kΩ respectively)
• No mutual interference between the transistors
6
handbook, halfpage
• Simplification of circuit design
• Reduces number of components and board space.
6
5
5
4
4
R1
R2
TR2
TR1
APPLICATIONS
R2
• Especially suitable for space reduction in portable
equipment
1
Top view
2
R1
3
1
MAM343
2
3
• Inverter circuit configurations without use of external
resistors.
Fig.1 Simplified outline (SC-88) and symbol.
DESCRIPTION
NPN/PNP resistor-equipped transistors in an SC-88
(SOT363) plastic package.
PINNING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector TR1; TR2
2, 5
6, 3
1, 4
MBK120
MARKING
TYPE NUMBER
PUMD9
1999 May 20
MARKING CODE
Fig.2 Equivalent inverter symbol.
Dt9
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
VI
input voltage
positive
−
+40
V
negative
−
−6
V
IO
output current (DC)
−
100
mA
ICM
peak collector current
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Refer to SC-88 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient note 1
Note
1. Refer to SC-88 standard mounting conditions.
1999 May 20
3
VALUE
UNIT
416
K/W
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD9
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector cut-off current
IC = 0; VCB = 50 V
−
−
100
nA
ICEO
collector cut-off current
IB = 0; VCE = 30 V
−
−
1
µA
IB = 0; VCE = 30 V; Tj = 150 °C
−
−
50
µA
µA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
−
150
hFE
DC current gain
IC = 5 mA; VCE = 5 V
100
−
−
VCEsat
collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA
−
−
100
mV
Vi(off)
input-off voltage
IC = 100 µA; VCE = 5 V
−
0.7
0.5
V
Vi(on)
input-on voltage
IC = 1 mA; VCE = 0.3 V
1.4
0.8
−
V
R1
input resistor
7
10
13
kΩ
R2
------R1
resistor ratio
3.7
4.7
5.7
Cc
collector capacitance
TR1 (NPN)
−
−
2.5
pF
TR2 (PNP)
−
−
3
pF
1999 May 20
IE = ie = 0; VCB = 10 V; f = 1 MHz
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
MGR757
103
handbook, halfpage
PUMD9
MGR756
103
handbook, halfpage
(1)
hFE
(2)
VCEsat
(3)
(mV)
102
102
(1)
(2)
(3)
10
1
10−1
1
10
IC (mA)
10
10−1
102
TR1 (NPN); VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MGR759
2
1
10
Vi(off)
(V)
1.6
102
Collector-emitter saturation voltage as a
function of collector current; typical values.
MGR758
102
handbook, halfpage
handbook, halfpage
IC (mA)
Vi(on)
(V)
10
1.2
(1)
(2)
0.8
1 (1)
(3)
(2)
0.4
(3)
0
10−2
10−1
1
IC (mA)
10−1
10−1
10
TR1 (NPN); VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
TR1 (NPN); VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5
Fig.6
Input-off voltage as a function of collector
current; typical values.
1999 May 20
5
1
10
IC (mA)
102
Input-on voltage as a function of collector
current; typical values.
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
MGR761
103
handbook, halfpage
hFE
PUMD9
MGR760
−103
handbook, halfpage
(1)
VCEsat
(2)
(3)
102
(mV)
−102
(1)
10
(2)
(3)
1
−10−1
−1
−10
IC (mA)
−10
−10−1
−102
TR2 (PNP); VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.7
Fig.8
DC current gain as a function of collector
current; typical values.
MGR763
−2
−1
−10
Vi(off)
(V)
−1.6
−102
Collector-emitter saturation voltage as a
function of collector current; typical values.
MGR762
−102
handbook, halfpage
handbook, halfpage
IC (mA)
Vi(on)
(V)
−10
−1.2
(1)
(2)
−0.8
(1)
−1
(3)
(2)
(3)
−0.4
−0
−10−2
−10−1
−1
IC (mA)
−10−1
−10−1
−10
−1
−10
IC (mA)
−102
TR2 (PNP); VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
TR2 (PNP); VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.9
Fig.10 Input-on voltage as a function of collector
current; typical values.
Input-off voltage as a function of collector
current; typical values.
1999 May 20
6
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD9
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
1999 May 20
REFERENCES
IEC
JEDEC
EIAJ
SC-88
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD9
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 20
8
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
NOTES
1999 May 20
9
PUMD9
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
NOTES
1999 May 20
10
PUMD9
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
NOTES
1999 May 20
11
PUMD9
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© Philips Electronics N.V. 1999
SCA 64
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Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 May 20
Document order number:
9397 750 05874