PHILIPS UAA2077AM

INTEGRATED CIRCUITS
DATA SHEET
UAA2077AM
Image rejecting front-end
for DECT applications
Product specification
Supersedes data of 1995 Feb 16
File under Integrated Circuits, IC17
1996 Jul 04
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in I
and Q IF channels that phase shift the IF by 45° and 135°
respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.
FEATURES
• Low-noise, wide dynamic range amplifier
• Very low noise figure
• Dual balanced mixer for over 25 dB on-chip image
rejection
For instance, signals presented at the RF input at LO + IF
frequency are rejected through this signal processing
while signals at LO − IF frequency can form the IF signal.
An internal switch enables the upper or lower image
frequency to be rejected.
• IF I/Q combiner at 110 MHz
• On-chip quadrature network
• RX fast on/off power-down mode
• Shrink small outline packaging
The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45° and 135° phase shifting and a combining
network for image rejection. The IF driver has differential
open-collector type outputs.
• Very small application (no image filter).
APPLICATIONS
• 1800 MHz front-end for DECT hand-portable
equipment
The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers.The centre frequency of the phase shifter is
adjustable for maximum image rejection in a given band.
The all-pass filters outputs are buffered before being fed to
the receive mixers. All RF and IF inputs or outputs are
balanced.
• Compact digital mobile communication equipment
• TDMA receivers.
GENERAL DESCRIPTION
UAA2077AM contains a high frequency low noise receiver
front-end intended to be used in DECT mobile telephones.
Designed in an advanced BiCMOS process it combines
high performance with low power consumption and a high
degree of integration, thus reducing external component
costs and total front-end size.
Two pins RXON and SXON are used to control the
different power-down modes. A special mode of operation
called synthesizer-on mode (SX mode), controlled by pin
SXON can be used to minimize the LO pulling when the
receiver is turned on. When SXON is HIGH, all internal
buffers on the LO path are turned on. Pin SBS allows a
selection of whether to reject the upper or lower image
frequency. Special care has been taken for fast power-up
switching.
The main advantage of the UAA2077AM is its ability to
provide over 25 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Tamb = 0 to +70 °C
3.15
4.0
5.3
V
over full temperature range
3.6
4.0
5.3
V
ICC(RX)
receive supply current
21.5
26.5
33.5
mA
ICC(PD)
supply current in power-down
−
0.2
50
µA
Tamb
operating ambient temperature
−30
+25
+85
°C
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
UAA2077AM
1996 Jul 04
SSOP20
DESCRIPTION
plastic shrink small outline package; 20 leads; body width 4.4 mm
2
VERSION
SOT266-1
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
BLOCK DIAGRAM
handbook, full pagewidth
VCCLNA
n.c.
n.c.
4
7
SXON RXON
9
12
SBS
UAA2077AM
+45o
11
3
17
RFINA
RFINB
LNAGND
5
6
LNA
+135o
18
8
low-noise
amplifier
RECEIVE SECTION
VCCLO
VQUADLO
LOGND
15
LOCAL OSCILLATOR
SECTION
10
QUADRATURE
PHASE
SHIFTER
16
14
13
LOINA
LOINB
MBH154
Fig.1 Block diagram.
1996 Jul 04
3
IFA
IF
COMBINER
IFB
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
PINNING
SYMBOL
PIN
DESCRIPTION
n.c.
1
not connected
n.c.
2
not connected
VCCLNA
3
supply voltage for LNA and IF parts
n.c. 1
20 n.c.
n.c.
4
not connected
n.c. 2
19 n.c.
RFINA
5
RF input A (balanced)
VCCLNA 3
18 IFB
RFINB
6
RF input B (balanced)
n.c. 4
17 IFA
n.c.
7
not connected
LNAGND
8
ground for LNA and IF parts
SXON
9
SX mode enable (see Table 1)
VQUADLO
10
input voltage for LO quadrature
trimming
SBS
11
sideband selection
RXON
12
RX mode enable (see Table 1)
LOINB
13
LO input B (balanced)
LOINA
14
LO input A (balanced)
VCCLO
15
supply voltage for LO parts
LOGND
16
ground for LO parts
IFA
17
IF output A (balanced)
IFB
18
IF output B (balanced)
n.c.
19
not connected
n.c.
20
not connected
handbook, halfpage
RFINA 5
15 VCCLO
RFINB 6
n.c. 7
14 LOINA
LNAGND 8
13 LOINB
SXON 9
12 RXON
VQUADLO 10
11 SBS
MBH151
Fig.2 Pin configuration.
Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics.
FUNCTIONAL DESCRIPTION
Receive section
The IF output is differential and of the open-collector type.
Typical application will load the output with a differential
1 kΩ load; for example, a 1 kΩ resistor load at each IF
output, plus a differential 2 kΩ load consisting of the input
impedance of the IF filter or the input impedance of the
matching network for the IF filter. The power gain refers to
the available power on this 2 kΩ load. The path to VCC for
the DC current should be achieved via tuning inductors.
The output voltage is limited to VCC + 3Vbe or 3 diode
forward voltage drops.
The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type, the whole internal architecture is fully
differential.
The local oscillator, shifted in phase to 45° and 135°,
mixes the amplified RF to create I and Q channels.
The two I and Q channels are buffered, phase shifted by
45° and 135° respectively, amplified and recombined
internally to realize the image rejection.
Fast switching, on/off, of the receive section is controlled
by the hardware input RXON.
Pin SBS allows sideband selection:
• fLO > fRF (SBS = 1)
• fLO < fRF (SBS = 0).
where fRF is the frequency of the wanted signal.
1996 Jul 04
16 LOGND
UAA2077AM
4
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
SBS
handbook, full pagewidth
MIXER
VCCLNA
IF
amplifier
+45o
IFA
RFINA
RFINB
IF
COMBINER
MIXER
IFB
LNA
LNAGND
IF
amplifier
+135o
MBH152
RXON
LOIN
Fig.3 Block diagram, receive section.
Local oscillator section
The local oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.
to RX
handbook, halfpage
The centre frequency of the receive band is adjustable by
the voltage on pin VQUADLO. This should be achieved by
connecting a resistor between VQUADLO and VCC. Over
25 dB of image rejection can be obtained by an optimum
resistor value.
VCCLO
VQUADLO
A synthesizer-on (SX) mode is used to power-up the LO
input buffers, thus minimizing the pulling effect on the
external VCO when entering receive mode. This mode is
active when SXON = 1.
QUAD
LOGND
MBH153
LOINA
LOINB
There are no internal biassing components attached to the
pins LOINA and LOINB. These pins are connected by
capacitors to the internal phase shifting network.
Fig.4 Block diagram, LO section.
1996 Jul 04
5
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
Table 1 Control of power status
EXTERNAL PIN LEVEL
CIRCUIT MODE OF OPERATION
RXON
SXON
LOW
LOW
HIGH
X
LOW
HIGH
power-down mode
RX mode (receive and LO sections on)
SX mode (only LO section on)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCC
supply voltage
∆GND
Pl(max)
Tj(max)
MIN.
−
MAX.
UNIT
9
V
difference in ground supply voltage applied between LOGND and LNAGND −
0.6
V
maximum power input
−
20
dBm
maximum operating junction temperature
−
150
°C
Pmax
maximum power dissipation
−
250
mW
Tstg
IC storage temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
120
K/W
thermal resistance from junction to ambient in free air
HANDLING
Every pin withstands the ESD test in accordance with “MIL-STD-883C Class 2 (method 3015.5)”.
DC CHARACTERISTICS
VCC = 4.0 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins VCCLNA and VCCLO
VCC
supply voltage
Tamb = 0 to +70 °C
3.15
over full temperature range 3.6
4.0
5.3
V
4.0
5.3
V
ICC(RX)
supply current in RX mode
21.5
26.5
33.5
mA
ICC(PD)
supply current in power-down mode
−
0.2
50
µA
ICC(SX)
supply current in SX mode
3
5
7
mA
Pins RXON, SXON and SBS
Vth
CMOS threshold voltage
−
1.25
−
V
VIH
HIGH level input voltage
0.7VCC
−
VCC
V
VIL
LOW level input voltage
−0.3
−
+0.8
V
IIH
HIGH level static input current
pin at VCC − 0.4 V
−1
−
+1
µA
IIL
LOW level static input current
pin at 0.4 V
−1
−
+1
µA
1996 Jul 04
note 1
6
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
SYMBOL
UAA2077AM
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins RFINA and RFINB
VI
DC input voltage level
receive section on
−
2.0
−
V
receive section on
−
2.5
−
mA
Pins IFA and IFB
IO
DC output current
Note
1. The referenced inputs should be connected to a valid CMOS input level.
AC CHARACTERISTICS
VCC = 4.0 V; Tamb = −30 to +85 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Receive section (receive section enabled)
RiRX
RF input resistance
(real part of the parallel input
impedance)
balanced; at 1890 MHz
−
60
−
Ω
CiRX
RF input capacitance
(imaginary part of the parallel
input impedance)
balanced; at 1890 MHz
−
1
−
pF
fiRX
RF input frequency
1880
−
1900
MHz
RLiRX
return loss on matched RF
input
balanced; note 1
11
15
−
dB
GCP
conversion power gain
differential RF inputs to
differential IF outputs loaded to
1 kΩ differential
17
20
23
dB
Grip
gain ripple as a function of RF
frequency
note 2
−
0.2
−
dB
∆G/T
gain variation with temperature Tamb = −30 to +25 °C; note 2
−20
0
+10
mdB/°C
Tamb = +25 to +85 °C; note 2
−40
−30
−20
mdB/°C
CP1RX
1 dB compression point
differential RF inputs to
differential IF outputs; note 1
−26
−23
−
dBm
DES3
3 dB desensitisation point
interferer frequency offset:
3 MHz; differential RF inputs to
differential IF outputs; note 1
−
−30
−
dBm
interferer frequency offset:
−
20 MHz; differential RF inputs to
differential IF outputs; note 1
−28
−
dBm
IP2DRX
2nd order intercept point
differential RF inputs to
differential IF outputs; note 2
15
30
−
dBm
IP3RX
3rd order intercept point
differential RF inputs to
differential IF outputs; note 2
−23
−17
−
dBm
NFRX
overall noise figure
differential RF inputs to
differential IF outputs;
notes 2 and 3
−
4.3
5.0
dB
1996 Jul 04
7
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
SYMBOL
UAA2077AM
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ZLRX
typical application IF output
load impedance
balanced
−
1
−
kΩ
RLoRX
return loss on matched IF
output
balanced; note 1
11
15
−
dB
foRX
IF frequency
−
110
−
MHz
IR
rejection of image frequency
26
32
−
dB
1770
−
2010
MHz
fLO < fRF; fIF = 110 MHz; note 4
Local oscillator section (receive section enabled)
fiLO
LO input frequency
RiLO
LO input resistance
(real part of the parallel input
impedance)
balanced; at 1780 MHz
−
40
−
Ω
CiLO
LO input capacitance
(imaginary part of the parallel
input impedance)
balanced; at 1780 MHz
−
2
−
pF
RLiLO
return loss on matched LO
input (including power-down
mode)
note 1
9
12
−
dB
∆RLiLO
return loss variation ratio
between SX and RX modes
linear S11 variation; note 1
−
5
−
mU
PiLO
LO input power level
−6
−3
+3
dBm
RILO
reverse isolation
40
−
−
dB
1
5
20
µs
LOIN to RFIN at LO frequency;
note 2
Timing
tstart
start-up time of each block
Notes
1. Measured and guaranteed only on UAA2077AM demonstration board at Tamb = 25 °C.
2. Measured and guaranteed only on UAA2077AM demonstration board.
3. This value includes printed-circuit board and balun losses.
4.
Measured and guaranteed only on UAA2077AM demonstration board at Tamb = 25 °C. VQUADLO open-circuit.
1996 Jul 04
8
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
INTERNAL PIN CONFIGURATION
SYMBOL
VCCLNA
PIN
DC
VOLTAGE
(V)
3
4.0
EQUIVALENT CIRCUIT
VCC
RFINA
5
2.0
5
RFINB
6
6
2.0
GND
MGG090
LNAGND
8
0
SXON
9
−
SBS
11
−
VCC
9, 11,12
GND
RXON
12
−
MGG088
VCC
LOINB
13
−
13,14
LOINA
14
−
GND
MGG089
VCCLO
1996 Jul 04
15
4.0
9
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
SYMBOL
LOGND
PIN
DC
VOLTAGE
(V)
16
0
UAA2077AM
EQUIVALENT CIRCUIT
VCC
IFA
17
2.5
17
18
GND
IFB
18
2.5
GND
MGG091
1996 Jul 04
10
19
C6
8.2 pF
L6 5.6 nH
C5
82 pF
3
18
4
17
R6
1200 Ω
16
4V
6.8 pF
C1
5
RFIN
1880 to1900
MHz
8.2 pF
C2 1.2 pF
C3
L1 5.6 nH
UAA2077AM
L15
6.8 nH
8.2 pF
C14 1.2 pF
11
15
7
14
8
13
9
12
10
11
SXON
2
C30
8.2 pF
C31
82 pF
L12
220
nH
120 nH
L13
IF
110 MHz
C23
6.8 pF
C24
C25
22 pF
IFB
L14 120 nH
R4
560
kΩ
1
C27
8.2 pF
SBS
2
C8
8.2
pF
R7
1200 Ω
C22 IFA
120 pF
4V
VQUADLO
1
6
L11
220
nH
22 pF C26
Philips Semiconductors
2
4V
Image rejecting front-end
for DECT applications
20
APPLICATION INFORMATION
1996 Jul 04
1
RXON
C19
8.2 pF
C29
8.2 pF
3.3 nH
L9
C21
1.8 pF
C28
1 nF
2
C7
8.2
pF
R3
560
kΩ
1
C9
8.2
pF
R5
560
kΩ
C20
1.8 pF
LOIN
1770 to 1790
MHz
4V
MGC631 - 1
Fig.5 Application diagram.
Product specification
Figure 5 illustrates the electrical diagram of the UAA2077AM Philips demonstration board for DECT applications. All matching is to 50 Ω for measurement purposes. Different values will
be used in a real application.
UAA2077AM
handbook, full pagewidth
3.3 nH
L10
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
SOT266-1
E
A
X
c
y
HE
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1.0
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
90-04-05
95-02-25
SOT266-1
1996 Jul 04
EUROPEAN
PROJECTION
12
o
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1996 Jul 04
13
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 04
14
Philips Semiconductors
Product specification
Image rejecting front-end
for DECT applications
UAA2077AM
NOTES
1996 Jul 04
15
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20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 83749, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 926 5361, Fax. +7 095 564 8323
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165,
252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 825 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com/ps/
(1) UAA2077AM_4 June 26, 1996 11:51 am
© Philips Electronics N.V. 1996
SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
647021/1200/04/pp16
Date of release: 1996 Jul 04
Document order number:
9397 750 00919