CY15B256J, 256 Kbit (32K × 8) Automotive Serial (I2C) FRAM Datasheet.pdf

CY15B256J
2
256-Kbit (32K × 8) Automotive Serial (I C)
F-RAM
256-Kbit (32K × 8) Automotive Serial (I2C) F-RAM
Features
■
■
Functional Description
256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
14
❐ High-endurance 100 trillion (10 ) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
[1]
❐ Up to 3.4-MHz frequency
❐ Direct hardware replacement for serial EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■
Device ID
❐ Manufacturer ID and Product ID
■
Low power consumption
❐ 175-A active current at 100 kHz
❐ 150-A standby current
❐ 8-A sleep mode current
The CY15B256J is a 256-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike EEPROM, the CY15B256J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. F-RAM also exhibits much lower power during writes
than EEPROM because write operations do not require an
internally elevated power supply voltage for write circuits. The
CY15B256J is capable of supporting 1014 read/write cycles, or
100 million times more write cycles than EEPROM.
These capabilities make the CY15B256J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less
overhead for the system.
■
Low-voltage operation: VDD = 2.0 V to 3.6 V
■
Automotive-A temperature: –40 C to +85 C
■
8-pin small outline integrated circuit (SOIC) package
■
Restriction of hazardous substances (RoHS) compliant
The CY15B256J provides substantial benefits to users of serial
EEPROM as a hardware drop-in replacement. The device incorporates a read-only Device ID that allows the host to determine
the manufacturer, product density, and product revision. The
device specifications are guaranteed over an Automotive-A
temperature range of –40 C to +85 C.
For a complete list of related documentation, click here.
Logic Block Diagram
Counter
Address
Latch
15
32 K x 8
F-RAM Array
8
Serial to Parallel
Converter
SDA
Data Latch
8
8
SCL
Device ID and
Manufacturer ID
Control Logic
WP
A0-A2
Note
1. The CY15B256J does not meet the NXP I2C specification in the Fast-mode Plus (Fm+, 1 MHz) for IOL and in the High Speed Mode (Hs-mode, 3.4 MHz) for Vhys.
Refer to the DC Electrical Characteristics table for more details.
Cypress Semiconductor Corporation
Document Number: 001-90843 Rev. *G
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 13, 2016
CY15B256J
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Functional Overview ........................................................ 4
Memory Architecture ........................................................ 4
Two-wire Interface ............................................................ 4
STOP Condition (P) ..................................................... 4
START Condition (S) ................................................... 4
Data/Address Transfer ................................................ 5
Acknowledge / No-acknowledge ................................. 5
High Speed Mode (Hs-Mode) ...................................... 6
Slave Device Address ................................................. 6
Addressing Overview .................................................. 6
Data Transfer .............................................................. 6
Memory Operation ............................................................ 7
Write Operation ........................................................... 7
Read Operation ........................................................... 8
Sleep Mode ................................................................. 9
Device ID ......................................................................... 10
Maximum Ratings ........................................................... 11
Operating Range ............................................................. 11
DC Electrical Characteristics ........................................ 11
Document Number: 001-90843 Rev. *G
Data Retention and Endurance ..................................... 12
Capacitance .................................................................... 12
Thermal Resistance ........................................................ 12
AC Test Loads and Waveforms ..................................... 12
AC Test Conditions ........................................................ 12
AC Switching Characteristics ....................................... 13
Power Cycle Timing ....................................................... 14
Ordering Information ...................................................... 15
Ordering Code Definitions ......................................... 15
Package Diagram ............................................................ 16
Acronyms ........................................................................ 17
Document Conventions ................................................. 17
Units of Measure ....................................................... 17
Document History Page ................................................. 18
Sales, Solutions, and Legal Information ...................... 19
Worldwide Sales and Design Support ....................... 19
Products .................................................................... 19
PSoC® Solutions ...................................................... 19
Cypress Developer Community ................................. 19
Technical Support ..................................................... 19
Page 2 of 19
CY15B256J
Pinout
Figure 1. 8-pin SOIC Pinout
A0
1
A1
2
A2
3
VSS
4
Top View
not to scale
8
VDD
7
WP
6
SCL
5
SDA
Pin Definitions
Pin Name
I/O Type
Description
A0-A2
Input
Device Select Address 0-2. These pins are used to select one of up to eight devices of the same type
on the same two-wire bus. To select the device, the address value on the three pins must match the
corresponding bits contained in the slave address. The address pins are pulled down internally.
SDA
Input/Output Serial Data Address. This is a bidirectional pin for the two-wire interface. It is open-drain and is
intended to be wire-AND'd with other devices on the two-wire bus. The input buffer incorporates a
Schmitt trigger for noise immunity and the output driver includes slope control for falling edges. An
external pull-up resistor is required.
SCL
Input
Serial Clock. The serial clock pin for the two-wire interface. Data is clocked out of the part on the falling
edge, and into the device on the rising edge. The SCL input also incorporates a Schmitt trigger input
for noise immunity.
WP
Input
Write Protect. When tied to VDD, addresses in the entire memory map will be write-protected. When
WP is connected to ground, all addresses are write enabled. This pin is pulled down internally.
VSS
Power supply Ground for the device. Must be connected to the ground of the system.
VDD
Power supply Power supply input to the device.
Document Number: 001-90843 Rev. *G
Page 3 of 19
CY15B256J
Functional Overview
Two-wire Interface
The CY15B256J is a serial F-RAM memory. The memory array
is logically organized as 32,768 × 8 bits and is accessed using a
two-wire (I2C) interface. The functional operation of the F-RAM
is similar to serial EEPROM. The major difference between the
CY15B256J and a serial EEPROM with the same pinout is the
F-RAM's superior write performance, high endurance, and low
power consumption.
The CY15B256J employs a bidirectional two-wire bus protocol
using few pins or board space. Figure 2 illustrates a typical
system configuration using the CY15B256J in a microcontroller-based system. The two-wire bus is familiar to many users
but is described in this section.
By convention, any device that is sending data to the bus is the
transmitter while the target device for this data is the receiver.
The device that is controlling the bus is the master. The master
is responsible for generating the clock signal for all operations.
Any device on the bus that is being controlled is a slave. The
CY15B256J is always a slave device.
Memory Architecture
When accessing the CY15B256J, the user addresses 32K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the two-wire
protocol, which includes a slave address (to distinguish other
non-memory devices) and a two-byte address. The upper MSB
bit of the address range is 'don't care' value. The complete
address of 15 bits specifies each byte address uniquely.
The bus protocol is controlled by transition states in the SDA and
SCL signals. There are four conditions including START, STOP,
data bit, or acknowledge. Figure 3 and Figure 4 illustrate the
signal conditions that specify the four states. Detailed timing
diagrams are shown in the electrical specifications section.
The CY15B256J does not meet the NXP I2C specification in the
Fast-mode Plus (Fm+, 1 MHz) for IOL and in the High Speed
Mode (Hs-mode, 3.4 MHz) for Vhys. Refer to the DC Electrical
Characteristics table for more details.
The access time for the memory operation is essentially zero,
beyond the time needed for the serial protocol. That is, the
memory is read or written at the speed of the two-wire bus. Unlike
a serial EEPROM, it is not necessary to poll the device for a
ready condition because writes occur at bus speed. By the time
a new bus transaction can be shifted into the device, a write
operation is complete. This is explained in more detail in Memory
Operation on page 7.
Figure 2. System Configuration using Serial (I2C) F-RAM
V DD
RPmin = (VDD - VOLmax) / IOL
RPmax = tr / (0.8473 * Cb)
SDA
Microcontroller
SCL
V DD
V DD
A0
SCL
A0
SCL
A0
SCL
A1
SDA
A1
SDA
A1
SDA
WP
A2
WP
A2
CY15B256J
#0
A2
WP
CY15B256J
CY15B256J
#1
#7
STOP Condition (P)
START Condition (S)
A STOP condition is indicated when the bus master drives SDA
from low to HIGH while the SCL signal is HIGH. All operations
using the CY15B256J should end with a STOP condition. If an
operation is in progress when a STOP is asserted, the operation
will be aborted. The master must have control of the SDA (not a
memory read) to assert a STOP condition.
A START condition is indicated when the bus master drives SDA
from HIGH to LOW while the SCL signal is HIGH. All commands
should be preceded by a START condition. An operation in
progress can be aborted by asserting a START condition at any
time. Aborting an operation using the START condition will ready
the CY15B256J for a new operation.
Document Number: 001-90843 Rev. *G
Page 4 of 19
CY15B256J
If the power supply drops below the specified VDD minimum
during operation, the system should issue a START condition
prior to performing another operation.
Figure 3. START and STOP Conditions
full pagewidth
SDA
SDA
SCL
SCL
S
P
STOP Condition
START Condition
Figure 4. Data Transfer on the I2C Bus
handbook, full pagewidth
P
SDA
Acknowledgement
signal from slave
MSB
SCL
S
1
2
7
9
8
1
Acknowledgement
signal from receiver
2
3
4-8
ACK
START
condition
9
ACK
All data transfers (including addresses) take place while the SCL
signal is HIGH. Except under the three conditions described
above, the SDA signal should not change while SCL is HIGH.
Acknowledge / No-acknowledge
The acknowledge takes place after the 8th data bit has been
transferred in any transaction. During this state the transmitter
should release the SDA bus to allow the receiver to drive it. The
receiver drives the SDA signal LOW to acknowledge receipt of
the byte. If the receiver does not drive SDA LOW, the condition
is a no-acknowledge and the operation is aborted.
S
or
P
STOP or
START
condition
Byte complete
Data/Address Transfer
S
The receiver will fail to acknowledge for two distinct reasons, the
first being that a byte transfer fails. In this case, the
no-acknowledge ceases the current operation so that the part
can be addressed again. This allows the last byte to be
recovered in the event of a communication error.
The second and most common reason is that, the receiver does
not acknowledge to deliberately end an operation. For example,
during a read operation, the CY15B256J will continue to place
data on the bus as long as the receiver sends acknowledges
(and clocks). When a read operation is complete and no more
data is needed, the receiver must not acknowledge the last byte.
If the receiver acknowledges the last byte, this causes the
CY15B256J to attempt to drive the bus on the next clock while
the master is sending a new command such as STOP.
Figure 5. Acknowledge on the I2C Bus
handbook, full pagewidth
DATA OUTPUT
BY MASTER
No Acknowledge
DATA OUTPUT
BY SLAVE
Acknowledge
SCL FROM
MASTER
1
2
8
9
S
START
Condition
Document Number: 001-90843 Rev. *G
Clock pulse for
acknowledgement
Page 5 of 19
CY15B256J
High Speed Mode (Hs-Mode)
The CY15B256J supports a 3.4-MHz high-speed mode. A master code (00001XXXb) must be issued to place the device into the
high-speed mode. Communication between master and slave will then be enabled for speeds up to 3.4 MHz. A STOP condition will
exit Hs-mode. Single- and multiple-byte reads and writes are supported.
Figure 6. Data Transfer Format in Hs-Mode
handbook, full pagewidth
Hs-mode
F/S-mode
S
MASTER CODE
1 S
SLAVE ADD. R/W 0
F/S-mode
DATA
A /1 P
n (bytes+ ack.)
No Acknowledge
Acknowledge or
No Acknowledge
Hs-mode continues
S
SLAVE ADD.
Slave Device Address
Addressing Overview
The first byte that the CY15B256J expects after a START
condition is the slave address. As shown in Figure 7, the slave
address contains the device type or slave ID, the device select
address bits, and a bit that specifies if the transaction is a read
or a write.
After the CY15B256J (as receiver) acknowledges the slave
address, the master can place the memory address on the bus
for a write operation. The address requires two bytes. The
complete 15-bit address is latched internally. Each access
causes the latched address value to be incremented automatically. The current address is the value that is held in the latch;
either a newly written value or the address following the last
access. The current address will be held for as long as power
remains or until a new value is written. Reads always use the
current address. A random read address can be loaded by
beginning a write operation as explained below.
Bits 7-4 are the device type (slave ID) and should be set to 1010b
for the CY15B256J. These bits allow other function types to
reside on the two-wire bus within an identical address range. Bits
3-1 are the device select address bits. They must match the
corresponding value on the external address pins to select the
device. Up to eight CY15B256J devices can reside on the same
two-wire bus by assigning a different address to each. Bit 0 is the
read/write bit (R/W). R/W = ‘1’ indicates a read operation and
R/W = ‘0’ indicates a write operation.
Figure 7. Memory Slave Device Address
MSB
handbook, halfpage
1
LSB
0
1
Slave ID
0
A2
A1
A0 R/W
Device Select
Document Number: 001-90843 Rev. *G
After transmission of each data byte, just prior to the
acknowledge, the CY15B256J increments the internal address
latch. This allows the next sequential byte to be accessed with
no additional addressing. After the last address (7FFFh) is
reached, the address latch will roll over to 0000h. There is no
limit to the number of bytes that can be accessed with a single
read or write operation.
Data Transfer
After the address bytes have been transmitted, data transfer
between the bus master and the CY15B256J can begin. For a
read operation the CY15B256J will place 8 data bits on the bus
then wait for an acknowledge from the master. If the
acknowledge occurs, the CY15B256J will transfer the next
sequential byte. If the acknowledge is not sent, the CY15B256J
will end the read operation. For a write operation, the
CY15B256J will accept 8 data bits from the master then sends
an acknowledge. All data transfer occurs MSB (most significant
bit) first.
Page 6 of 19
CY15B256J
Memory Operation
occurs in less time than a single bus clock. Therefore, any
operation including read or write can occur immediately following
a write. Acknowledge polling, a technique used with EEPROMs
to determine if a write is complete is unnecessary and will always
return a ready condition.
The CY15B256J is designed to operate in a manner very similar
to other two-wire interface memory products. The major differences result from the higher performance write capability of
F-RAM technology. These improvements result in some differences between the CY15B256J and a similar configuration
EEPROM during writes. The complete operation for both writes
and reads is explained below.
Internally, an actual memory write occurs after the 8th data bit is
transferred. It will be complete before the acknowledge is sent.
Therefore, if the user desires to abort a write without altering the
memory contents, this should be done using START or STOP
condition prior to the 8th data bit. The CY15B256J uses no page
buffering.
Write Operation
All writes begin with a slave address, then a memory address.
The bus master indicates a write operation by setting the LSB of
the slave address (R/W bit) to a '0'. After addressing, the bus
master sends each byte of data to the memory and the memory
generates an acknowledge condition. Any number of sequential
bytes may be written. If the end of the address range is reached
internally, the address counter will wrap from 7FFFh to 0000h.
The memory array can be write-protected using the WP pin.
Setting the WP pin to a HIGH condition (VDD) will write-protect
all addresses. The CY15B256J will not acknowledge data bytes
that are written to protected addresses. In addition, the address
counter will not increment if writes are attempted to these
addresses. Setting WP to a LOW state (VSS) will disable the write
protect. WP is pulled down internally.
Unlike other nonvolatile memory technologies, there is no
effective write delay with F-RAM. Since the read and write
access times of the underlying memory are the same, the user
experiences no delay through the bus. The entire memory cycle
Figure 8 and Figure 9 below illustrate a single-byte and
multiple-byte write cycles in Fast-mode Plus (Fm+). Figure 10
below illustrate a single-byte write cycles in Hs mode.
Figure 8. Single-Byte Write
Start
By Master
Stop
Address & Data
S
Slave Address
0 A
Address MSB
By F-RAM
A
Address LSB
A
Data Byte
A
P
Acknowledge
Figure 9. Multi-Byte Write
Start
Stop
Address & Data
By Master
S
Slave Address
0 A
Address MSB
By F-RAM
A
Address LSB
A
Data Byte
A
Data Byte
A
P
Acknowledge
Figure 10. Hs-Mode Byte Write
Start
Start &
Enter Hs-mode
Hs-mode command
By Master
S
0
0
0
0
1
X
By F-RAM
Document Number: 001-90843 Rev. *G
X
X
1
S
No
Acknowledge
Slave Address 0 A
Stop &
Exit Hs-mode
Address & Data
Address MSB
A
Address LSB
A
Data Byte
A P
Acknowledge
Page 7 of 19
CY15B256J
Read Operation
address read with multiple byte transfers. After each byte the
internal address counter will be incremented.
There are two basic types of read operations. They are current
address read and selective address read. In a current address
read, the CY15B256J uses the internal address latch to supply
the address. In a selective read, the user performs a procedure
to set the address to a specific value.
Note Each time the bus master acknowledges a byte, this
indicates that the CY15B256J should read out the next
sequential byte.
There are four ways to properly terminate a read operation.
Failing to properly terminate the read will most likely create a bus
contention as the CY15B256J attempts to read out additional
data onto the bus. The four valid methods are:
1. The bus master issues a no-acknowledge in the 9th clock
cycle and a STOP in the 10th clock cycle. This is illustrated in
the diagrams below. This is preferred.
2. The bus master issues a no-acknowledge in the 9th clock
cycle and a START in the 10th.
3. The bus master issues a STOP in the 9th clock cycle.
4. The bus master issues a START in the 9th clock cycle.
Current Address & Sequential Read
As mentioned above the CY15B256J uses an internal latch to
supply the address for a read operation. A current address read
uses the existing value in the address latch as a starting place
for the read operation. The system reads from the address
immediately following that of the last operation.
To perform a current address read, the bus master supplies a
slave address with the LSB set to a '1'. This indicates that a read
operation is requested. After receiving the complete slave
address, the CY15B256J will begin shifting out data from the
current address on the next clock. The current address is the
value held in the internal address latch.
If the internal address reaches 7FFFh, it will wrap around to
0000h on the next read cycle. Figure 11 and Figure 12 below
show the proper operation for current address reads.
Beginning with the current address, the bus master can read any
number of bytes. Thus, a sequential read is simply a current
Figure 11. Current Address Read
Start
By Master
No
Acknowledge
Address
Stop
S
Slave Address
By F-RAM
1 A
Data Byte
Acknowledge
1
P
Data
Figure 12. Sequential Read
Start
By Master
Address
No
Acknowledge
Acknowledge
Stop
S
Slave Address
By F-RAM
1 A
Data Byte
Acknowledge
A
Data Byte
1 P
Data
Figure 13. Hs-Mode Current Address Read
Start
Start &
Enter Hs-mode Address
Hs-mode command
By Master
S
0
0
0
0
By F-RAM
Document Number: 001-90843 Rev. *G
1
X
X
X
1
S
No
Acknowledge
No
Acknowledge
Stop &
Exit Hs-mode
Slave Address 1 A
Acknowledge
Data Byte
1
P
Data
Page 8 of 19
CY15B256J
Selective (Random) Read
There is a simple technique that allows a user to select a random
address location as the starting point for a read operation. This
involves using the first three bytes of a write operation to set the
internal address followed by subsequent read operations.
To perform a selective read, the bus master sends out the slave
address with the LSB (R/W) set to 0. This specifies a write
operation. According to the write protocol, the bus master then
sends the address bytes that are loaded into the internal address
latch. After the CY15B256J acknowledges the address, the bus
master issues a START condition. This simultaneously aborts
the write operation and allows the read command to be issued
with the slave address LSB set to a '1'. The operation is now a
current address read.
Figure 14. Selective (Random) Read
Start
Address
By Master
Start
No
Acknowledge
Address
Stop
S
Slave Address
0 A
Address MSB
A
Address LSB
By F-RAM
A
S
Slave Address
1 A
A low-power mode called Sleep Mode is implemented on the
CY15B256J device. The device will enter this low power state
when the Sleep command 86h is clocked-in. Sleep Mode entry
can be entered as follows:
1. The master sends a START command.
2. The master sends Reserved Slave ID 0xF8.
3. The CY15B256J sends an ACK.
4. The master sends the I2C-bus slave address of the slave
device it needs to identify. The last bit is a 'Don't care' value
(R/W bit). Only one device must acknowledge this byte (the
one that has the I2C-bus slave address).
5. The CY15B256J sends an ACK.
1 P
Data
Acknowledge
Sleep Mode
Data Byte
6. The master sends a Re-START command.
7. The master sends Reserved Slave ID 0x86.
8. The CY15B256J sends an ACK.
9. The master sends STOP to ensure the device enters sleep
mode.
Once in sleep mode, the device draws IZZ current, but the device
continues to monitor the I2C pins. Once the master sends a
Slave Address that the CY15B256J identifies, it will "wakeup"
and be ready for normal operation within tREC (400 s max.). As
an alternative method of determining when the device is ready,
the master can send read or write commands and look for an
ACK. While the device is waking up, it will NACK the master until
it is ready.
Figure 15. Sleep Mode Entry
Start
Address
By Master
S
Rsvd Slave ID (F8)
By F-RAM
Document Number: 001-90843 Rev. *G
A
Start
Slave Address
X A
S
Address
Rsvd Slave ID (86)
Stop
A
P
Acknowledge
Page 9 of 19
CY15B256J
Device ID
The CY15B256J device incorporates a means of identifying the device by providing three bytes of data, which are manufacturer,
product ID, and die revision. The Device ID is read-only. It can be accessed as follows:
1. The master sends a START command.
7. The master sends Reserved Slave ID 0xF9.
2. The master sends Reserved Slave ID 0xF8
8. The CY15B256J sends an ACK.
3. The CY15B256J sends an ACK.
9. The Device ID Read can be done, starting with the 12
manufacturer bits, followed by the 9 part identification bits,
4. The master sends the I2C-bus slave address of the slave
and then the 3 die revision bits.
device it needs to identify. The last bit is a 'Don't care' value
(R/W bit). Only one device must acknowledge this byte (the
10.The master ends the Device ID read sequence by NACKing
one that has the I2C-bus slave address).
the last byte, thus resetting the slave device state machine
and allowing the master to send the STOP command.
5. The CY15B256J sends an ACK.
Note The reading of the Device ID can be stopped anytime by
6. The master sends a Re-START command.
sending a NACK command.
Table 1. Device ID
Device ID Description
23–12
(12 bits)
Device ID
(3 bytes)
11–8
(4 bits)
2–0
(3 bits)
Product ID
Manufacturer ID
004221h
7–3
(5 bits)
000000000100
Density
Variation
Die Rev
0010
00100
001
Note Product ID bits 0 and 4 are reserved.
Figure 16. Read Device ID
Start
Address
By Master
Start
No
Acknowledge
Acknowledge
Address
Stop
S
Rsvd Slave ID (F8)
A
Slave Address
By F-RAM
Document Number: 001-90843 Rev. *G
A
S
Acknowledge
Rsvd Slave ID (F9)
A
Data Byte
A
Data Byte
A
Data Byte
1
P
Data
Page 10 of 19
CY15B256J
Maximum Ratings
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Surface mount lead soldering
temperature (3 seconds) ......................................... +260 C
Storage temperature ................................ –55 C to +125 C
Electrostatic discharge voltage
Human Body Model (JEDEC Std JESD22-A114-B) ................ 2 kV
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on VDD relative to VSS .........–1.0 V to +4.5 V
Input voltage* ......... –1.0 V to + 4.5 V and VIN < VDD + 1.0 V
DC voltage applied to outputs
in HI-Z state ........................................ –0.5 V to VDD + 0.5 V
Charged Device Model (JEDEC Std JESD22-C101-A) .......... 500 V
Latch-up current .................................................... > 140 mA
* Exception: The “VIN < VDD + 1.0 V” restriction does not apply
to the SCL and SDA inputs.
Operating Range
Range
Ambient Temperature (TA)
VDD
Automotive-A
–40 C to +85 C
2.0 V to 3.6 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VDD + 2.0 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
VDD
Power supply
IDD
Average VDD current
Test Conditions
SCL toggling
between
VDD – 0.2 V and VSS,
other inputs VSS or
VDD – 0.2 V.
fSCL = 100 kHz
Min
Typ [2]
Max
Unit
2.0
3.3
3.6
V
–
–
175
A
fSCL = 1 MHz
–
–
400
A
fSCL = 3.4 MHz
–
–
1000
A
ISB
VDD standby current
SCL = SDA = VDD. All other inputs VSS
or VDD. Stop command issued.
–
90
150
A
IZZ
Sleep mode current
SCL = SDA = VDD. All other inputs VSS
or VDD. Stop command issued.
–
5
8
A
ILI
Input leakage current
(Except WP and A2-A0)
VSS < VIN < VDD
–1
–
+1
A
Input leakage current
(for WP and A2-A0)
VSS < VIN < VDD
–1
–
+100
A
ILO
Output leakage current
VSS < VOUT < VDD
–1
–
+1
A
VIH
Input HIGH voltage (SDL, SDA)
0.7 × VDD
–
VDD(max) +
0.3
V
Input HIGH voltage (WP, A2-A0)
0.7 × VDD
–
VDD + 0.3
V
– 0.3
–
0.3 × VDD
V
IOL = 3 mA
–
–
0.4
V
IOL = 6 mA
–
–
0.6
V
For VIN = VIL(Max)
50
–
–
k
For VIN = VIH(Min)
1
–
–
M
fSCL = 100 kHz,
400 kHz, 1 MHz
0.05 × VDD
–
–
V
fSCL = 3.4 MHz
0.06 × VDD
–
–
V
VIL
Input LOW voltage
VOL[3]
Output LOW voltage
Rin
[4]
Vhys[5]
Input resistance (WP, A2-A0)
Hysteresis of Schmitt Trigger
inputs
Notes
2. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.
3. The CY15B256J does not meet the NXP I2C specification in the Fast-mode Plus (Fm+, 1 MHz) for IOL of 20 mA at a VOL of 0.4 V.
4. The input pull-down circuit is strong (50 k) when the input voltage is below VIL and weak (1 M) when the input voltage is above VIH.
5. The CY15B256J does not meet the NXP I2C specification in the High Speed Mode (Hs-mode, 3.4 MHz) for Vhys of 0.1 × VDD.
Document Number: 001-90843 Rev. *G
Page 11 of 19
CY15B256J
Data Retention and Endurance
Parameter
TDR
NVC
Description
Test condition
Data retention
Endurance
Min
Max
Unit
TA = 85 C
10
–
Years
TA = 75 C
38
–
TA = 65 C
151
–
Over operating temperature
1014
–
Cycles
Capacitance
Parameter [6]
Description
pin
Test Conditions
Max
Unit
8
pF
6
pF
capacitance TA = 25 C, f = 1 MHz, VDD = VDD(typ)
CIO
Input/Output
(SDA)
CI
Input pin capacitance
Thermal Resistance
Parameter [6]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
8-pin SOIC
Unit
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA / JESD51.
146
C/W
48
C/W
AC Test Loads and Waveforms
Figure 17. AC Test Loads and Waveforms
3.0 V
867 
OUTPUT
100 pF
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times .................................................10 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance ............................................ 100 pF
Note
6. These parameters are guaranteed by design and are not tested.
Document Number: 001-90843 Rev. *G
Page 12 of 19
CY15B256J
AC Switching Characteristics
Over the Operating Range
Alt.
Parameter[7] Parameter
Fast-mode Plus (Fm+)[9]
Description
Hs-mode[9]
Unit
Min
Max
Min
Max
–
1.0
–
3.4
MHz
fSCL[8]
SCL clock frequency
tSU; STA
Start condition setup for repeated Start
260
–
160
–
ns
tHD;STA
Start condition hold time
260
–
160
–
ns
tLOW
Clock LOW period
500
–
160
–
ns
tHIGH
Clock HIGH period
260
–
60
–
ns
tSU;DAT
tSU;DATA
Data in setup
50
–
10
–
ns
tHD;DAT
tHD;DATA
Data in hold
0
–
0
70
ns
Data output hold (from SCL at VIL)
0
–
0
–
ns
tR[10]
tr
Input rise time
–
120
10
80
ns
tF[10]
tf
Input fall time
20 × (VDD / 5.5 V)
120
10
80
ns
260
–
160
–
ns
SCL LOW to SDA Data Out Valid
–
450
–
130
ns
ACK output valid time
–
450
–
130
ns
20 × (VDD/5.5 V)
120
–
80
ns
500
–
300
–
ns
0
50
–
5
ns
tDH
STOP condition setup
tSU;STO
tVD;DATA
tAA
tVD;ACK
tOF
[10]
Output fall time from VIH min to VILmax
tBUF
Bus free before new transmission
tSP
Noise suppression time constant on SCL, SDA
Figure 18. Read Bus Timing Diagram
tR
`
tF
tHIGH
tSP
tLOW
tSP
SCL
tSU:SDA
1/fSCL
tBUF
tHD:DAT
tSU:DAT
SDA
Start
tDH
tAA
Stop Start
Acknowledge
Figure 19. Write Bus Timing Diagram
tHD:DAT
SCL
tHD:STA
tSU:STO
tSU:DAT
tAA
SDA
Start
Stop Start
Acknowledge
Notes
7. Test conditions assume signal transition time of 10 ns or less, timing reference levels of VDD/2, input pulse levels of 0 to VDD(typ), and output loading of the specified
IOL and 100 pF load capacitance shown in Figure 17.
8. The speed-related specifications are guaranteed characteristic points along a continuous curve of operation from DC to fSCL (max).
9. Bus Load (Cb) considerations; Cb < 550 pF for I2C clock frequency (SCL) 1 MHz; Cb < 100 pF for SCL at 3.4 MHz.
10. These parameters are guaranteed by design and are not tested.
Document Number: 001-90843 Rev. *G
Page 13 of 19
CY15B256J
Power Cycle Timing
Over the Operating Range
Parameter
Description
Min
Max
Unit
tPU
Power-up VDD(min) to first access (START condition)
1
–
ms
tPD
Last access (STOP condition) to power-down (VDD(min))
0
–
µs
tVR [11, 12]
VDD power-up ramp rate
50
–
µs/V
tVF [11, 12]
VDD power-down ramp rate
100
–
µs/V
tREC
Recovery time from sleep mode
–
400
µs
VDD
~
~
Figure 20. Power Cycle Timing
VDD(min)
tVR
SDA
I2 C START
tVF
tPD
~
~
tPU
VDD(min)
I2 C STOP
Notes
11. Slope measured at any point on the VDD waveform.
12. These parameters are guaranteed by design and are not tested.
Document Number: 001-90843 Rev. *G
Page 14 of 19
CY15B256J
Ordering Information
Package
Diagram
Ordering Code
Package Type
CY15B256J-SXA
51-85066
8-pin SOIC
CY15B256J-SXAT
51-85066
8-pin SOIC
Operating
Range
Automotive-A
All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 15
B
256 J - S
X
A
T
Option:
blank = Standard; T = Tape and Reel
Temperature Range:
A = Automotive-A (–40 C to +85 C)
X = Pb-free
Package Type: S = 8-pin SOIC
J = I2C F-RAM
Density: 256 = 256-Kbit
Voltage: B = 2.0 V to 3.6 V
F-RAM
Cypress
Document Number: 001-90843 Rev. *G
Page 15 of 19
CY15B256J
Package Diagram
Figure 21. 8-pin SOIC (150 Mils) Package Outline, 51-85066
51-85066 *H
Document Number: 001-90843 Rev. *G
Page 16 of 19
CY15B256J
Acronyms
Acronym
Document Conventions
Description
Units of Measure
ACK
Acknowledge
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
EIA
Electronic Industries Alliance
I2C
Hz
hertz
Inter-Integrated Circuit
Kb
1024 bit
I/O
Input/Output
kHz
kilohertz
JEDEC
Joint Electron Devices Engineering Council
k
kilohm
LSB
Least Significant Bit
MHz
megahertz
MSB
Most Significant Bit
M
megaohm
NACK
No Acknowledge
A
microampere
RoHS
Restriction of Hazardous Substances
s
microsecond
R/W
Read/Write
mA
milliampere
SCL
Serial Clock Line
ms
millisecond
SDA
Serial Data Access
ns
nanosecond
SOIC
Small Outline Integrated Circuit

ohm
WP
Write Protect
%
percent
pF
picofarad
V
volt
W
watt
Document Number: 001-90843 Rev. *G
Symbol
Unit of Measure
Page 17 of 19
CY15B256J
Document History Page
Document Title: CY15B256J, 256-Kbit (32K × 8) Automotive Serial (I2C) F-RAM
Document Number: 001-90843
Rev.
ECN No.
Submission
Date
Orig. of
Change
Description of Change
**
4266205
01/29/2014
GVCH
New data sheet.
*A
4390913
06/20/2014
GVCH
Changed status from Advance to Preliminary.
Maximum Ratings: Electrostatic Discharge Voltage
Removed machine model.
DC Electrical Characteristics:
Added ISB and IZZ typical value.
Changed VIH value from VDD + 0.5 V to VDD(max) + 0.3 V for SDA, SCL and
VDD (max) + 0.3 V for WP, A2-A0.
Removed VOL2 parameter spec and renamed VOL1 as VOL parameter spec.
Added VOL = 0.6 V at 6 mA.
Changed VIL min value from –0.5 V to –0.3 V.
Added Vhys parameter spec.
AC Switching Characteristics:
Added tOF, tBUF, tAA, tVD;ACK value for 3.4 MHz.
Removed footnote 7.
Changed Device ID from 004201h to 004221h.
Updated Capacitance table.
*B
4512788
09/24/2014
GVCH
Added footnote 3 for the difference in IOL with respect to I2C specification.
*C
4571858
11/18/2014
GVCH
Changed Vhys spec value from 0.1 × VDD to 0.05 × VDD for 3.4 MHz frequency.
Added footnote 7 for the difference in Vhys with respect to I2C specification.
*D
4596783
12/17/2014
GVCH
Added footnote 1 for the difference in IOL and Vhys with respect to NXP I2C
specification.
Two-wire Interface: Added description for the difference in IOL and Vhys with
respect to NXP I2C specification.
Changed Vhys spec value from 0.05 × VDD to 0.06 × VDD for 3.4 MHz frequency
Updated footnote 3.
Updated footnote 5 for the difference in Vhys with respect to NXP I2C specification.
Updated to new template.
*E
4786735
06/04/2015
GVCH
Changed status from Preliminary to Final.
Updated Package Diagram:
spec 51-85066 – Changed revision from *F to *G.
*F
4883131
09/03/2015
*G
5084285
01/13/2016
Document Number: 001-90843 Rev. *G
ZSK / PSR Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Updated Maximum Ratings:
Removed “Maximum junction temperature”.
Added “Maximum accumulated storage time”.
Added “Ambient temperature with power applied”.
GVCH
Updated Ordering Information:
Updated part numbers.
Updated Package Diagram:
spec 51-85066 – Changed revision from *G to *H.
Page 18 of 19
CY15B256J
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
Automotive
Clocks & Buffers
Interface
Lighting & Power Control
Memory
PSoC
Touch Sensing
USB Controllers
Wireless/RF
cypress.com/go/automotive
cypress.com/go/clocks
cypress.com/go/interface
cypress.com/go/powerpsoc
cypress.com/go/memory
cypress.com/go/psoc
cypress.com/go/touch
psoc.cypress.com/solutions
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP
Cypress Developer Community
Community | Forums | Blogs | Video | Training
Technical Support
cypress.com/go/support
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2014-2016. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-90843 Rev. *G
Revised January 13, 2016
All products and company names mentioned in this document may be the trademarks of their respective holders.
Page 19 of 19