PHILIPS BLF6G27S-45

BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
Rev. 02 — 7 February 2008
Preliminary data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA[1]
Gp
ηD
ACPR885k
ACPR1980k
(W)
(dB)
(%)
(dBc)
(dBc)
7
18
24
−49[2]
−64[2]
f
VDS
PL(AV)
(MHz)
(V)
2500 to 2700
28
[1]
Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2]
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 350 mA:
n Qualified up to a maximum VDS operation of 32 V
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation
n Internally matched for ease of use
n Low gold plating thickness on leads
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
1.3 Applications
n RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Symbol
BLF6G27-45 (SOT608A)
1
drain
2
gate
3
source
1
1
[1]
2
3
3
2
sym112
BLF6G27S-45 (SOT608B)
1
drain
2
gate
3
source
1
[1]
1
3
2
3
2
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLF6G27-45
-
flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
BLF6G27S-45
-
ceramic earless flanged package; 2 leads
SOT608B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
20
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
Min
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
2 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Type
Rth(j-case)
thermal resistance from Tcase = 80 °C;
BLF6G27-45
junction to case
PL = 34 W (CW) BLF6G27S-45
Typ
Unit
1.7
K/W
1.7
K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C per section; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 60 mA
1.4
1.9
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
1.4
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
8.8
10.4
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
gfs
forward transconductance
VDS = 10 V; ID = 2.5 A
-
4.3
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 2.1 A
-
0.24
0.385 Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
1.1
-
pF
7. Application information
Table 7.
Application information
Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; channel bandwidth = 1.23 MHz;
f = 2700 MHz; RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 °C; unless otherwise
specified; in a class-AB production circuit.
Symbol
Parameter
PL(AV)
average output power
Gp
power gain
PL(AV) = 7 W
16.5 18
RLin
input return loss
PL(AV) = 7 W
-
−10 −5
dB
ηD
drain efficiency
PL(AV) = 7 W
%
ACPR885k
adjacent channel power ratio (885 kHz)
ACPR1980k adjacent channel power ratio (1980 kHz)
[1]
Conditions
Min
Typ Max Unit
-
7
-
W
dB
22
24
PL(AV) = 7 W
[1]
-
−49 −46
dBc
PL(AV) = 7 W
[1]
-
−64 −61
dBc
Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G27-45 and BLF6G27S-45 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 350 mA; PL = 45 W (CW); f = 2600 MHz.
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
3 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
7.2 Single carrier N-CDMA performance
001aah406
22
50
ηD
(%)
Gp
(dB)
001aah407
−30
ACPR
(dBc)
40
−40
18
30
−50
16
20
−60
ACPR885k
14
10
−70
ACPR1500k
12
10−1
0
ACPR1980k
−80
10−1
20
Gp
ηD
1
102
10
(1)
(2)
(1)
(2)
(2)
(1)
1
PL(AV) (W)
102
10
PL(AV) (W)
VDS = 28 V; IDq = 350 mA; f = 2600 MHz;
single carrier N-CDMA; PAR = 9.7 dB at 0.01 %
probability; channel bandwidth = 1.23 MHz;
instantaneous bandwidth = 30 kHz.
VDS = 28 V; IDq = 350 mA; f = 2600 MHz;
single carrier N-CDMA; PAR = 9.7 dB at 0.01 %
probability; channel bandwidth = 1.23 MHz;
instantaneous bandwidth = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 1. Power gain and drain efficiency as functions of
average load power; typical values
Fig 2. Adjacent channel power ratio as function of
average load power; typical values
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
4 of 15
BLF6G27-45; BLF6G27S-45
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WiMAX power LDMOS transistor
7.3 Two-tone
001aah408
19.5
Gp
(dB)
001aah409
−15
IMD3
(dBc)
(5)
−25
(4)
18.5
−35
(3)
(2)
−45
(1)
−55
(1)
(2)
(5)
(3)
(4)
17.5
16.5
1
102
10
−65
1
PL(PEP) (W)
PL(PEP) (W)
VDS = 28 V; f1 = 2598.75 MHz; f2 = 2601.25 MHz;
2.5 MHz tone spacing.
VDS = 28 V; f1 = 2598.75 MHz; f2 = 2601.25 MHz;
2.5 MHz tone spacing.
(1) IDq = 250 mA
(1) IDq = 250 mA
(2) IDq = 300 mA
(2) IDq = 300 mA
(3) IDq = 350 mA
(3) IDq = 350 mA
(4) IDq = 400 mA
(4) IDq = 400 mA
(5) IDq = 500 mA
(5) IDq = 500 mA
Fig 3. Power gain as function of peak envelope load
power; typical values
Fig 4. Third order intermodulation distortion as
function of peak envelope load power; typical
values
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
102
10
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
5 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
7.4 Continuous wave
001aah410
20
60
Gp
Gp
(dB)
ηD
(%)
16
40
001aah411
20
Gp
(dB)
16
ηD
(1)
(2)
(3)
12
20
(4)
12
(5)
0
8
1
102
10
(6)
8
1
102
10
PL(CW) (W)
PL (W)
IDq = 350 mA; f = 2600 MHz; Tcase = 25 °C;
VDS = 28 V.
IDq = 350 mA; f = 2600 MHz; Tcase = 25 °C.
(1) VDS = 32 V
(2) VDS = 28 V
(3) VDS = 24 V
(4) VDS = 20 V
(5) VDS = 16 V
(6) VDS = 12 V
Fig 5. Power gain and drain efficiency as functions of
CW load power; typical values
Fig 6. Power gain as function of CW load power;
typical values
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
6 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
7.5 Single carrier N-CDMA broadband performance at 7 W average
001aah412
19
ηD
(%)
Gp
(dB)
Gp
18
001aah413
−40
27
ACPR
(dBc)
26
(1)
(2)
−50
ACPR885k
25
17
ηD
16
(1)
(2)
ACPR1500k
24
−60
14
2500
(1)
(2)
23
15
2550
2600
ACPR1980k
−70
2500
22
2700
2650
2550
2600
f (MHz)
2650
2700
f (MHz)
VDS = 28 V; IDq = 350 mA; single carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; instantaneous
bandwidth = 30 kHz.
VDS = 28 V; IDq = 350 mA; single carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; instantaneous
bandwidth = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 7. Power gain and drain efficiency as functions of
frequency; typical values
Fig 8. Adjacent channel power ratio as function of
frequency; typical values
001aah417
19
Gp
(dB)
0
RLin
(dB)
Gp
18
−4
17
−8
RLin
−12
16
15
2500
2550
2600
−16
2700
2650
f (MHz)
VDS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz.
Fig 9. Power gain and input return loss as functions of frequency
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
7 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
7.6 Single carrier N-CDMA broadband performance at 20 W average
001aah414
18
Gp
(dB)
17
45
ηD
(%)
Gp
43
001aah415
−30
(1)
(2)
ACPR
(dBc)
ACPR885k
−40
16
41
ηD
(1)
(2)
ACPR1500k
39
15
−50
13
2500
(1)
(2)
37
14
2550
2600
35
2700
2650
−60
2500
ACPR1980k
2550
2600
f (MHz)
2650
2700
f (MHz)
VDS = 28 V; IDq = 350 mA; single carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability;
instantaneous bandwidth = 30 kHz.
VDS = 28 V; IDq = 350 mA; single carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability;
instantaneous bandwidth = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 10. Power gain and drain efficiency as functions of
frequency; typical values
Fig 11. Adjacent channel power ratio as function of
frequency; typical values
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
8 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
8. Test information
C10
C11
L1
C4
VGG
C14
C7
C6
VDD
+28 V
R2
C5
R1
C9
50 Ω
output
Q1
C3
50 Ω
input
C1
C2
C8
C12
C13
001aah416
See Table 8 for list of components.
Fig 12. Test circuit for operation at 2500 MHz to 2700 MHz
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
9 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
short (0 Ω)
VGG
C14
C6
VDD
R2
L1
C11
C10
C4
C5
C7
Q1
R1
C3
C1
C9
C2
C8
C13
C12
BLF6G27-45
Input-Rev3
BLF6G27-45
Output-Rev3
001aah418
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm.
See Table 8 for list of components.
Fig 13. Component layout for 2500 MHz to 2700 MHz test circuit
Table 8.
List of components
For test circuit, see Figure 12 and Figure 13.
Component
Description
Value
C1
multilayer ceramic chip capacitor
0.3 pF
[1]
Remarks
C2
multilayer ceramic chip capacitor
0.5 pF
[1]
C3, C4, C7, C8
multilayer ceramic chip capacitor
11 pF
[1]
C5, C10, C11, C12, C13 multilayer ceramic chip capacitor
4.7 µF
C4532X7R1H475M
C6
tantalum capacitor
10 µF; 35 V
Kemet (Farnell)
C9
multilayer ceramic chip capacitor
8.2 pF
C14
electrolytic capacitor
470 µF; 63 V
L1
ferrite SMD bead
-
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
R1
resistor
22 Ω
package 0603
R2
resistor
12 Ω
package 1206
Q1
BLF6G27-45 or BLF6G27S-45
-
[1]
American Technical Ceramics type 100B or capacitor of same quality.
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
10 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
D
A
F
3
D1
U1
B
q
c
C
1
H
E1
p
U2
E
w1 M A M B M
2
A
w2 M C M
b
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.62
3.76
7.24
6.99
0.15
0.10
10.21 10.29
10.01 10.03
inches
0.182
0.148
0.285 0.006
0.275 0.004
0.402 0.405
0.394 0.395
OUTLINE
VERSION
D
D1
F
H
p
Q
q
U1
U2
w1
w2
10.21 10.29
10.01 10.03
1.14
0.89
15.75
14.73
3.30
2.92
1.70
1.35
15.24
20.45
20.19
9.91
9.65
0.25
0.51
0.402 0.405
0.394 0.395
0.045 0.620
0.035 0.580
0.130
0.115
0.067
0.600
0.053
0.805
0.795
0.390
0.010 0.020
0.380
E
E1
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-02-22
02-02-11
SOT608A
Fig 14. Package outline SOT608A
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
11 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
Ceramic earless flanged package; 2 leads
SOT608B
D
A
F
3
D1
A
U1
c
1
U2
H
E
E1
2
w1
b
M
A
Q
M
0
5 mm
scale
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.62
3.76
7.24
6.99
0.15
0.10
inch
0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403
0.020
0.148 0.275 0.004 0.394 0.395 0.394 0.395 0.035 0.580 0.053 0.393 0.393
OUTLINE
VERSION
D
D1
E
E1
10.21 10.29 10.21 10.29
10.01 10.03 10.01 10.03
F
H
Q
1.14
0.89
15.75
14.73
1.70
1.35
U1
10.24 10.24
9.98 9.98
REFERENCES
IEC
JEDEC
U2
JEITA
w1
0.51
EUROPEAN
PROJECTION
ISSUE DATE
06-11-27
06-12-06
SOT608B
Fig 15. Package outline SOT608B
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
12 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
N-CDMA
Narrowband Code Division Multiple Access
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
VSWR
Voltage Standing-Wave Ratio
WiMAX
Worldwide Interoperability for Microwave Access
11. Revision history
Table 10.
Revision history
Document ID
Release date Data sheet status
BLF6G27-45_BLF6G27S-45_2 20080207
Modifications:
•
Change notice Supersedes
Preliminary data sheet -
Moved Figure 9 on page 7 from Section 8 on page 9 to Section 7.5 on page 7
BLF6G27-45_BLF6G27S-45_1 20080129
Preliminary data sheet -
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
BLF6G27-45_BLF6G27S-45_1
-
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
13 of 15
BLF6G27-45; BLF6G27S-45
NXP Semiconductors
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BLF6G27-45_BLF6G27S-45_2
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 7 February 2008
14 of 15
NXP Semiconductors
BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.6
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Single carrier N-CDMA performance . . . . . . . . 4
Two-tone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Continuous wave . . . . . . . . . . . . . . . . . . . . . . . 6
Single carrier N-CDMA broadband
performance at 7 W average . . . . . . . . . . . . . . 7
Single carrier N-CDMA broadband
performance at 20 W average . . . . . . . . . . . . . 8
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 7 February 2008
Document identifier: BLF6G27-45_BLF6G27S-45_2